216167 ⎘
Semiconductor lasers; Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well lasers [SQW-lasers], multiple quantum well lasers [MQW-lasers] or graded index separate confinement heterostructure lasers [GRINSCH-lasers] in AB compounds, e.g. AlGaAs-laser, InP-based laser characterised by the materials of the barrier layers based on In(Al)P
WAVELENGTH TUNABLE LASER, WAVELENGTH TUNABLE LASER MODULE, AND METHOD OF MANUFACTURING LAYER STRUCTURE OF WAVELENGTH TUNABLE LASER
#2SINGLE MODE LASER WITH LARGE OPTICAL MODE SIZE
#3SEMICONDUCTOR MODE-LOCKED LASER DUAL COMB SYSTEM
#4VERTICAL CAVITY SURFACE EMITTING LASER ELEMENT, VERTICAL CAVITY SURFACE EMITTING LASER ELEMENT ARRAY, VERTICAL CAVITY SURFACE EMITTING LASER MODULE, AND METHOD OF PRODUCING VERTICAL CAVITY SURFACE EMITTING LASER ELEMENT
#5Compact, power-efficient stacked broadband optical emitters
#6Tunable laser and manufacturing method for tunable laser
#7Tunable laser
#8Self-referencing frequency comb based on high-order sideband generation
#9Compact, power-efficient stacked broadband optical emitters
#10High temperature laser diode