Patents-Review.com
ClassID:

216162 ⎘

H01S5/34346 - CPC Classification

Classification description:

Semiconductor lasers; Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well lasers [SQW-lasers], multiple quantum well lasers [MQW-lasers] or graded index separate confinement heterostructure lasers [GRINSCH-lasers] in AB compounds, e.g. AlGaAs-laser, InP-based laser characterised by the materials of the barrier layers

Sub-classes:
Recent Application in this class:
#1
20260045771
2026-02-12

QCL DEVICE, EXTERNAL RESONANCE-TYPE QCL MODULE DEVICE, ANALYZER, AND LIGHT IRRADIATION METHOD

 #2
20260005488
2026-01-01

OPTICAL SEMICONDUCTOR DEVICE

 #3
20250350093
2025-11-13

SEMICONDUCTOR LASER

 #4
20250239836
2025-07-24

NITRIDE SEMICONDUCTOR LIGHT-EMITTING ELEMENT

 #5
20250158360
2025-05-15

VERTICAL CAVITY SURFACE EMITTING DEVICE

 #6
20250141191
2025-05-01

SEMICONDUCTOR GREEN LASERS

 #7
20250141190
2025-05-01

SEMICONDUCTOR LASERS

 #8
20250087965
2025-03-13

SPECIALIZED MOBILE LIGHT DEVICE CONFIGURED WITH A GALLIUM AND NITROGEN CONTAINING LASER SOURCE

 #9
20250022982
2025-01-16

DEVICE FOR FACILITATING EMITTING LIGHT AND A METHOD FOR MANUFACTURING THE DEVICE

 #10
20240413615
2024-12-12

METHOD FOR MANUFACTURING QUANTUM CASCADE LASER DEVICE AND QUANTUM CASCADE LASER DEVICE

 #11
20240396306
2024-11-28

NITRIDE SEMICONDUCTOR LIGHT-EMITTING ELEMENT

 #12
20240395966
2024-11-28

LIGHT-EMITTERS WITH GROUP III-NITRIDE-BASED QUANTUM WELL ACTIVE REGIONS HAVING GAN INTERLAYERS

 #13
20240380186
2024-11-14

SEMICONDUCTOR LASER ELEMENT

 #14
20240332894
2024-10-03

Semiconductor lasers with substrate mode suppression layers

 #15
20240313509
2024-09-19

OPTOELECTRONIC COMPONENT THAT IS INSENSITIVE TO DISLOCATIONS

 #16
20240250505
2024-07-25

NITRIDE SEMICONDUCTOR LIGHT-EMITTING ELEMENT

 #17
20240250500
2024-07-25

MONOLITHIC INTEGRATED MULTI-SEGMENT CASCADE OPTICAL FREQUENCY COMB AND CHIP THEREOF

 #18
20240146025
2024-05-02

METHOD OF MANUFACTURING VERTICAL-CAVITY SURFACE-EMITTING LASER ELEMENT

 #19
20240136790
2024-04-25

SEMICONDUCTOR LASER AND METHOD OF MANUFACTURING SEMICONDUCTOR LASER

 #20
20240128722
2024-04-18

VERTICAL CAVITY SURFACE EMITTING LASER DEVICE

 #21
20240106195
2024-03-28

LIGHT-EMITTING COMPONENT, MULTILAYER SEMICONDUCTOR SUBSTRATE, AND MEASUREMENT APPARATUS

 #22
20240047943
2024-02-08

SEMICONDUCTOR LASER ELEMENT

 #23
20240006844
2024-01-04

Semiconductor Optical Device

 #24
20230408406
2023-12-21

Spectroscopy Device Incorporating a Mid-Infrared Laser

 #25
20230402821
2023-12-14

NITRIDE SEMICONDUCTOR LIGHT-EMITTING ELEMENT

 #26
20230387665
2023-11-30

HIGH-POWER EDGE-EMITTING SEMICONDUCTOR LASER WITH ASYMMETRIC STRUCTURE

 #27
20230387652
2023-11-30

Specialized mobile light device configured with a gallium and nitrogen containing laser source

 #28
20230369828
2023-11-16

NANOCRYSTAL ARRAY, LASER DEVICE, AND DISPLAY DEVICE

 #29
20230335974
2023-10-19

LIGHT-EMITTING DEVICE

 #30
20230268720
2023-08-24

LASER DEVICE

 #31
20230205068
2023-06-29

LIGHT-EMITTING DEVICE, PROJECTOR, AND DISPLAY

 #32
20230170672
2023-06-01

OPTOELECTRONIC DEVICES WITH TUNABLE OPTICAL MODE AND CARRIER DISTRIBUTION IN THE WAVEGUIDES

 #33
20230163572
2023-05-25

Semiconductor laser element

 #34
20230127863
2023-04-27

SURFACE-EMITTING LASER ELEMENT AND SURFACE-EMITTING LASER ELEMENT MANUFACTURING METHOD

 #35
20230111268
2023-04-13

LASER ELEMENT

 #36
20230036709
2023-02-02

Monolithically integrated mid-infrared two-dimensional optical phased array

 #37
20230021325
2023-01-26

SEMICONDUCTOR LASER DEVICE AND METHOD OF MANUFACTURING THE SAME

 #38
20220416508
2022-12-29

SEMICONDUCTOR LASER ELEMENT

 #39
20220310874
2022-09-29

GROUP III NITRIDE SEMICONDUCTOR DEVICE AND METHOD FOR PRODUCING SAME

 #40
20220271510
2022-08-25

Semiconductor laser element and method for manufacturing the same

 #41
20220247156
2022-08-04

SEMICONDUCTOR LIGHT-EMITTING ELEMENT AND METHOD OF FABRICATING SEMICONDUCTOR LIGHT-EMITTING ELEMENT

 #42
20220209505
2022-06-30

LASER MODULE

 #43
20220190555
2022-06-16

COMPOUND SEMICONDUCTOR LAYER STACK, METHOD OF FORMING THE SAME, AND LIGHT-EMITTING DEVICE

 #44
20220115843
2022-04-14

Light emitting device and projector

 #45
20220059995
2022-02-24

Quantum cascade laser

 #46
20220006256
2022-01-06

Gallium and nitrogen bearing dies with improved usage of substrate material

 #47
20210391695
2021-12-16

Diode laser and method for operating a diode laser

 #48
20210384707
2021-12-09

Light emitting element and method for manufacturing same

 #49
20210384706
2021-12-09

Vertical cavity surface emitting device

 #50
20210344169
2021-11-04

Electrically pumped photonic-crystal surface-emitting laser

 #51
20210313774
2021-10-07

Quantum cascade laser element

 #52
20210296854
2021-09-23

Method and device for ultraviolet to long wave infrared multiband semiconducting single emitter

 #53
20210296849
2021-09-23

On-chip integrated semiconductor laser structure and method for preparing the same

 #54
20210281050
2021-09-09

SEMICONDUCTOR LIGHT-EMITTING ELEMENT AND METHOD OF MANUFACTURING SEMICONDUCTOR LIGHT-EMITTING ELEMENT

 #55
20210215319
2021-07-15

Violet and ultraviolet illumination device configured with a gallium and nitrogen containing laser source

 #56
20210194206
2021-06-24

Specialized mobile light device configured with a gallium and nitrogen containing laser source

 #57
20210184428
2021-06-17

SEMICONDUCTOR LASER ELEMENT

 #58
20210111540
2021-04-15

Semiconductor laser element

 #59
20210091540
2021-03-25

Quantum cascade laser and method for manufacturing same

 #60
20210018161
2021-01-21

Infrared illumination device configured with a gallium and nitrogen containing laser source

 #61
20200412101
2020-12-31

Semiconductor light emitting element

 #62
20200403378
2020-12-24

Light emitting element

 #63
20200395737
2020-12-17

Semiconductor laser diode

 #64
20200381898
2020-12-03

SEMICONDUCTOR LIGHT-EMITTING DEVICE

 #65
20200350740
2020-11-05

Method for manufacturing gallium and nitrogen bearing laser devices with improved usage of substrate material

 #66
20200287354
2020-09-10

Nitride semiconductor element

 #67
20200274331
2020-08-27

Semiconductor laser wafer and semiconductor laser

 #68
20200235550
2020-07-23

Semiconductor laser element and method for manufacturing the same

 #69
20200106244
2020-04-02

LIGHT EMITTING DEVICE AND PROJECTOR

 #70
20200076165
2020-03-05

Semiconductor laser element

 #71
20200044418
2020-02-06

Light emitting device and projector

 #72
20200028328
2020-01-23

VERTICAL CAVITY SURFACE EMITTING LASER

 #73
20200028325
2020-01-23

Light-emitting device and light-emitting apparatus

 #74
20200021083
2020-01-16

Nitride semiconductor light-emitting element, method for manufacturing nitride semiconductor light-emitting element, and nitride semiconductor light-emitting device

 #75
20190326466
2019-10-24

Optical semiconductor element and method of manufacturing optical semiconductor element

 #76
20190305520
2019-10-03

Nitride semiconductor light-emitting device

 #77
20190280154
2019-09-12

Semiconductor device and semiconductor device package including the same

 #78
20190260182
2019-08-22

Semiconductor module and manufacturing method thereof

 #79
20190181609
2019-06-13

Electrically isolating adjacent vertical-emitting devices

 #80
20190140139
2019-05-09

Optoelectronic semiconductor chip and method for producing an optoelectronic semiconductor chip

 #81
20190109432
2019-04-11

Method for manufacturing gallium and nitrogen bearing laser devices with improved usage of substrate material

 #82
20190074665
2019-03-07

Nitride-based light-emitting device

 #83
20180301868
2018-10-18

Self-referencing frequency comb based on high-order sideband generation

 #84
20180269652
2018-09-20

Plasmonic mode III-V laser as on-chip light source

 #85
20180261982
2018-09-13

SEMICONDUCTOR LASER

 #86
20180261981
2018-09-13

Semiconductor laser

 #87
20180226771
2018-08-09

Vertical cavity light emitting element

 #88
20180226538
2018-08-09

Device with transparent and higher conductive regions in lateral cross section of semiconductor layer

 #89
20180183213
2018-06-28

SEMICONDUCTOR LASER

 #90
20180138662
2018-05-17

Semiconductor optical device

 #91
20180069150
2018-03-08

Semiconductor device and semiconductor device package including the same

 #92
20180059012
2018-03-01

GAS MEASURING APPARATUS

 #93
20170365975
2017-12-21

Method for manufacturing gallium and nitrogen bearing laser devices with improved usage of substrate material

 #94
20170338626
2017-11-23

Laser diode chip

 #95
20170186910
2017-06-29

Device with transparent and higher conductive regions in lateral cross section of semiconductor layer

 #96
20170141535
2017-05-18

Plasmonic mode III-V laser as on-chip light source

 #97
20170125979
2017-05-04

Interband cascade light emitting devices

 #98
20170110852
2017-04-20

Ultraviolet light emitting element and electrical device using same

 #99
20170012408
2017-01-12

Quantum cascade laser

 #100
20160377534
2016-12-29

Gas measuring apparatus

 #101
20160359294
2016-12-08

Method for manufacturing gallium and nitrogen bearing laser devices with improved usage of substrate material

 #102
20160315219
2016-10-27

Device with transparent and higher conductive regions in lateral cross section of semiconductor layer

 #103
20160308331
2016-10-20

Terahertz quantum cascade laser implementing a {hacek over (C)}erenkov difference-frequency generation scheme

 #104
20150349496
2015-12-03

Semiconductor device and manufacturing method of semiconductor device

 #105
20150340551
2015-11-26

Semiconductor epitaxial structure and light-emitting device thereof

 #106
20150325743
2015-11-12

High efficiency broadband semiconductor nanowire devices

 #107
20150030046
2015-01-29

Group III nitride semiconductor light-emitting device

 #108
20140273323
2014-09-18

Method of manufacture of advanced heterojunction transistor and transistor laser

 #109
20140269802
2014-09-18

Lasers with GaPSb barrier layers

 #110
20140183447
2014-07-03

Semiconductor light emitting element and method for manufacturing the same

 #111
20110188528
2011-08-04

High Injection Efficiency Polar and Non-Polar III-Nitrides Light Emitters

 #112
20110013658
2011-01-20

Infrared semiconductor laser

 #113
20100207099
2010-08-19

Nitride semiconductor light emitting device and fabricating method thereof

 #114
20100158064
2010-06-24

Semiconductor light emitter

 #115
20090168634
2009-07-02

Optical disc drive apparatus with an indirect semiconductor laser containing an asymmetric quantum well structure

 #116
20090090902
2009-04-09

Optical devices using a penternary III-V material system

 #117
20090034571
2009-02-05

Migration enhanced epitaxy fabrication of active regions having quantum wells

 #118
20080149917
2008-06-26

III-nitride compound semiconductor light emitting device

 #119
20080142779
2008-06-19

Nitride semiconductor light emitting device and fabricating method thereof

 #120
20080081390
2008-04-03

Nitride-based light emitting heterostructure

 #121
20070221908
2007-09-27

Semiconductor light emitter

 #122
20070036187
2007-02-15

High power vertical external cavity surface emitting laser

 #123
20060246700
2006-11-02

Migration enhanced epitaxy fabrication of active regions having quantum wells

 #124
20060118820
2006-06-08

Nitride-based light emitting heterostructure

 #125
20060007974
2006-01-12

Method for increasing maximum modulation speed of a light emitting device, and light emitting device with increased maximum modulation speed and quantum well structure thereof

 #126
20050230674
2005-10-20

Semiconductor light emitter

 #127
20050157765
2005-07-21

Low temperature grown layers with migration enhanced epitaxy adjacent to an InGaAsN(Sb) based active region

 #128
20050142683
2005-06-30

Migration enhanced epitaxy fabrication of quantum wells

 #129
20050129078
2005-06-16

Multicomponent barrier layers in quantum well active regions to enhance confinement and speed

 #130
20050123015
2005-06-09

Use of GaAs extended barrier layers between active regions containing nitrogen and AlGaAs confining layers

 #131
20050100066
2005-05-12

High temperature laser diode

 #132
20050034661
2005-02-17

System for developing a nitrogen-containing active region

 #133
20050030996
2005-02-10

Semiconductor laser device and optical disk recording and reproducing apparatus

 #134
17495378
2023-08-01

Strained and strain control regions in optical devices

 #135
16859070
2021-10-19

Strained and strain control regions in optical devices

 #136
16512903
2020-07-21

Infrared illumination device configured with a gallium and nitrogen containing laser source

 #137
16380163
2019-10-08

Epitaxial growth of cladding regions for a gallium and nitrogen containing laser diode

 #138
16356257
2020-04-28

Strained and strain control regions in optical devices

 #139
15961759
2019-05-21

Epitaxial growth of cladding regions for a gallium and nitrogen containing laser diode

 #140
15893068
2019-02-05

Electrically isolating adjacent vertical-emitting devices

 #141
15721786
2020-03-17

Ultraviolet light emitting diode structures and methods of manufacturing the same

 #142
15424516
2019-05-07

Method of strain engineering and related optical device using a gallium and nitrogen containing active region

 #143
15410231
2018-05-15

Methods for fabricating light emitting devices

 #144
15177956
2017-02-14

Method of strain engineering and related optical device using a gallium and nitrogen containing active region

 #145
14626221
2016-04-19

Ultraviolet light emitting diode structures and methods of manufacturing the same