216168 ⎘
Semiconductor lasers; Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well lasers [SQW-lasers], multiple quantum well lasers [MQW-lasers] or graded index separate confinement heterostructure lasers [GRINSCH-lasers] in AB compounds, e.g. AlGaAs-laser, InP-based laser characterised by the materials of the barrier layers explicitly Al-free
MULTIPLE QUANTUM WELL STRUCTURE, SEMICONDUCTOR LASER AND MANUFACTURING METHOD FOR MULTIPLE QUANTUM WELL STRUCTURE
#2Interband Cascade Lasers with Improved Voltage Efficiency
#3CONTROL METHOD AND CONTROL DEVICE OF WAVELENGTH TUNABLE LASER DEVICE, AND NON-TRANSITORY STORAGE MEDIUM STORING CONTROL PROGRAM OF WAVELENGTH TUNABLE LASER DEVICE
#4WAVELENGTH TUNABLE LASER DEVICE AND METHOD OF MANUFACTURING THE SAME
#5PHOTONIC CRYSTAL SURFACE LIGHT-EMITTING LASER ELEMENT
#6SEMICONDUCTOR LASER ELEMENT AND METHOD OF PRODUCING SEMICONDUCTOR LASER ELEMENT
#7VERTICAL CAVITY SURFACE EMITTING DEVICE
#8III-Nitride nanowire array monolithic photonic integrated circuit on (001)silicon operating at near-infrared wavelengths
#9Surface-emitting semiconductor laser
#10Surface emitting laser element and atomic oscillator
#11Nitride semiconductor light emitting device and fabricating method thereof
#12Vertical-cavity, surface-emission type laser diode and fabrication process thereof
#13Nanowire devices and systems, light-emitting nanowires, and methods of precisely positioning nanoparticles
#14Nitride semiconductor light emitting device and fabricating method thereof
#15Vertical-cavity, surface-emission type laser diode and fabrication process thereof
#16Semiconductor light-emitting device, surface-emission laser diode, and production apparatus thereof, production method, optical module and optical telecommunication system
#17Nanowire devices and systems, light-emitting nanowires, and methods of precisely positioning nanoparticles
#18Semiconductor optical amplification device and optical integrated circuit
#19Vertical-cavity surface-emission type laser diode and fabrication process thereof
#20Method for increasing maximum modulation speed of a light emitting device, and light emitting device with increased maximum modulation speed and quantum well structure thereof
#21Semiconductor light-emitting device, surface-emission laser diode, and production apparatus thereof, production method, optical module and optical telecommunication system
#22Magnesium based gettering regions for gallium and nitrogen containing laser diode devices
#23Magnesium based gettering regions for gallium and nitrogen containing laser diode devices
#24Magnesium based gettering regions for gallium and nitrogen containing laser diode devices