Y10S148/00 - CPC Classification Index

ClassID:

238654 ⎘

Y10S148/00 - CPC Classification

Classification description:

Metal treatment

Sub-classes:

Y10S148/001 » Amorphous semiconductor 0
Y10S148/002 » Amphoteric doping 0
Y10S148/003 » Anneal 5
Y10S148/004 » Annealing, incoherent light 3
Y10S148/005 » Antimonides of gallium or indium 0
Y10S148/006 » Apparatus 0
Y10S148/007 » Autodoping 0
Y10S148/008 » Bi-level fabrication 0
Y10S148/009 » Bi-MOS 3
Y10S148/01 » Bipolar transistors-ion implantation 0
Y10S148/011 » Bipolar transistors 1
Y10S148/012 » Bonding e.g. electrostatic for strain gauges 21
Y10S148/013 » Breakdown voltage 0
Y10S148/014 » Capacitor 0
Y10S148/015 » Capping layer 0
Y10S148/016 » Catalyst 4
Y10S148/017 » Clean surfaces 0
Y10S148/018 » Compensation doping 0
Y10S148/019 » Contacts of silicides 0
Y10S148/02 » Contacts, special 0
Y10S148/021 » Continuous process 0
Y10S148/022 » Controlled atmosphere 0
Y10S148/023 » Deep level dopants 3
Y10S148/024 » Defect control-gettering and annealing 0
Y10S148/025 » Deposition multi-step 0
Y10S148/026 » Deposition thru hole in mask 2
Y10S148/027 » Dichlorosilane 0
Y10S148/028 » Dicing 2
Y10S148/029 » Differential crystal growth rates 0
Y10S148/03 » Diffusion 0
Y10S148/031 » Diffusion at an edge 0
Y10S148/032 » Diffusion length 0
Y10S148/033 » Diffusion of aluminum 0
Y10S148/034 » Diffusion of boron or silicon 0
Y10S148/035 » Diffusion through a layer 0
Y10S148/036 » Diffusion, nonselective 0
Y10S148/037 » Diffusion-deposition 0
Y10S148/038 » Diffusions-staged 0
Y10S148/039 » Displace P-N junction 0
Y10S148/04 » Dopants, special 0
Y10S148/041 » Doping control in crystal growth 0
Y10S148/042 » Doping, graded, for tapered etching 3
Y10S148/043 » Dual dielectric 0
Y10S148/044 » Edge diffusion under mask 0
Y10S148/045 » Electric field 0
Y10S148/046 » Electron beam treatment of devices 0
Y10S148/047 » Emitter dip 0
Y10S148/048 » Energy beam assisted EPI growth 0
Y10S148/049 » Equivalence and options 0
Y10S148/05 » Etch and refill 5
Y10S148/051 » Etching 2
Y10S148/052 » Face to face deposition 0
Y10S148/053 » Field effect transistors fets 0
Y10S148/054 » Flat sheets-substrates 0
Y10S148/055 » Fuse 0
Y10S148/056 » Gallium arsenide 2
Y10S148/057 » Gas flow control 0
Y10S148/058 » Ge germanium 2
Y10S148/059 » Germanium on silicon or Ge-Si on III-V 1
Y10S148/06 » Gettering 1
Y10S148/061 » Gettering-armorphous layers 0
Y10S148/062 » Gold diffusion 0
Y10S148/063 » Gp II-IV-VI compounds 0
Y10S148/064 » Gp II-VI compounds 0
Y10S148/065 » Gp III-V generic compounds-processing 0
Y10S148/066 » Gp III-V liquid phase epitaxy 0
Y10S148/067 » Graded energy gap 0
Y10S148/068 » Graphite masking 0
Y10S148/069 » Green sheets 0
Y10S148/07 » Guard rings and cmos 5
Y10S148/071 » Heating, selective 0
Y10S148/072 » Heterojunctions 0
Y10S148/073 » Hollow body 0
Y10S148/074 » Horizontal melt solidification 0
Y10S148/075 » Imide resists 0
Y10S148/076 » Implant 0
Y10S148/077 » Implantation of silicon on sapphire 0
Y10S148/078 » Impurity redistribution by oxidation 0
Y10S148/079 » Inert carrier gas 0
Y10S148/08 » Infra-red 0
Y10S148/081 » Insulators 0
Y10S148/082 » Ion implantation FETs/COMs 0
Y10S148/083 » Ion implantation, general 0
Y10S148/084 » Ion implantation of compound devices 0
Y10S148/085 » Isolated-integrated 0
Y10S148/086 » Isolated zones 0
Y10S148/087 » I2L integrated injection logic 0
Y10S148/088 » J-Fet, i.e.junction field effect transistor 0
Y10S148/089 » Josephson devices 0
Y10S148/09 » Laser anneal 2
Y10S148/091 » Laser beam processing of fets 1
Y10S148/092 » Laser beam processing-diodes or transistor 0
Y10S148/093 » Laser beam treatment in general 1
Y10S148/094 » Laser beam treatment of compound devices 0
Y10S148/095 » Laser devices 0
Y10S148/096 » Lateral transistor 0
Y10S148/097 » Lattice strain and defects 0
Y10S148/098 » Layer conversion 0
Y10S148/099 » LED, multicolor 0
Y10S148/10 » Lift-off masking 3
Y10S148/101 » Liquid Phase Epitaxy, LPE 0
Y10S148/102 » Mask alignment 0
Y10S148/103 » Mask, dual function e.g. diffusion and oxidation 0
Y10S148/104 » Mask, movable 0
Y10S148/105 » Masks, metal 0
Y10S148/106 » Masks, special 1
Y10S148/107 » Melt 0
Y10S148/108 » Melt back 0
Y10S148/109 » Memory devices 4
Y10S148/11 » Metal-organic CVD, ruehrwein type 0
Y10S148/111 » Narrow masking 0
Y10S148/112 » Nitridation, direct, of silicon 0
Y10S148/113 » Nitrides of boron or aluminum or gallium 2
Y10S148/114 » Nitrides of silicon 0
Y10S148/115 » Orientation 0
Y10S148/116 » Oxidation, differential 10
Y10S148/117 » Oxidation, selective 0
Y10S148/118 » Oxide films 4
Y10S148/119 » Phosphides of gallium or indium 0
Y10S148/12 » Photocathodes-Cs coated and solar cell 0
Y10S148/121 » Plastic temperature 0
Y10S148/122 » Polycrystalline 0
Y10S148/123 » Polycrystalline diffuse anneal 0
Y10S148/124 » Polycrystalline emitter 0
Y10S148/125 » Polycrystalline passivation 0
Y10S148/126 » Power FETs 0
Y10S148/127 » Process induced defects 0
Y10S148/128 » Proton bombardment of silicon 0
Y10S148/129 » Pulse doping 0
Y10S148/13 » Purification 0
Y10S148/131 » Reactive ion etching rie 0
Y10S148/132 » Recoil implantation 0
Y10S148/133 » Reflow oxides and glasses 0
Y10S148/134 » Remelt 0
Y10S148/135 » Removal of substrate 9
Y10S148/136 » Resistors 0
Y10S148/137 » Resists 0
Y10S148/138 » Roughened surface 1
Y10S148/139 » Schottky barrier 0
Y10S148/14 » Schottky barrier contacts 0
Y10S148/141 » Self-alignment coat gate 1
Y10S148/142 » Semiconductor-metal-semiconductor 0
Y10S148/143 » Shadow masking 3
Y10S148/144 » Shallow diffusion 0
Y10S148/145 » Shaped junctions 0
Y10S148/146 » Sheet resistance, dopant parameters 0
Y10S148/147 » Silicides 0
Y10S148/148 » Silicon carbide 0
Y10S148/149 » Silicon on III-V 0
Y10S148/15 » Silicon on sapphire SOS 3
Y10S148/151 » Simultaneous diffusion 0
Y10S148/152 » Single crystal on amorphous substrate 0
Y10S148/153 » Solar cells-implantations-laser beam 0
Y10S148/154 » Solid phase epitaxy 0
Y10S148/155 » Solid solubility 0
Y10S148/156 » Sonos 0
Y10S148/157 » Special diffusion and profiles 0
Y10S148/158 » Sputtering 4
Y10S148/159 » Strain gauges 2
Y10S148/16 » Superlattice 0
Y10S148/161 » Tapered edges 0
Y10S148/162 » Testing steps 0
Y10S148/163 » Thick-thin oxides 2
Y10S148/164 » Three dimensional processing 5
Y10S148/165 » Transmutation doping 0
Y10S148/166 » Traveling solvent method 0
Y10S148/167 » Two diffusions in one hole 0
Y10S148/168 » V-Grooves 0
Y10S148/169 » Vacuum deposition, e.g. including molecular beam epitaxy 1
Y10S148/17 » Vapor-liquid-solid 0
Y10S148/171 » Varistor 0
Y10S148/172 » Vidicons 4
Y10S148/173 » Washed emitter 0
Y10S148/174 » Zener diodes 2
Y10S148/90 » Ion implanted 1
Y10S148/901 » Surface depleted in an alloy component, e.g. decarburized 0
Y10S148/902 » having portions of differing metallurgical properties or characteristics 8