ClassID:

240267

Y10S257/90 - CPC Classification

Classification description:

Active solid-state devices, e.g. transistors, solid-state diodes MOSFET type gate sidewall insulating spacer

Recent Application in this class:
#1
20180233414
2018-08-16

Method of manufacturing a semiconductor device with wider sidewall spacer for a high voltage MISFET

#2
20170117412
2017-04-27

Semiconductor device and fabrication method thereof

#3
20160268428
2016-09-15

Electronic device with asymmetric gate strain

#4
20160218040
2016-07-28

Method of manufacturing a semiconductor device with wider sidewall spacer for a high voltage MISFET

#5
20150295086
2015-10-15

Semiconductor device and fabrication method thereof

#6
20150087128
2015-03-26

Method of manufacturing a semiconductor device that includes a MISFET

#7
20150014789
2015-01-15

Integrated circuits with aligned (100) NMOS and (110) PMOS finFET sidewall channels

#8
20140361340
2014-12-11

Semiconductor device and fabrication method thereof

#9
20140346577
2014-11-27

Electronic device with asymmetric gate strain

#10
20140246680
2014-09-04

JFET devices with increased barrier height and methods of making same

#11
20140167180
2014-06-19

Semiconductor devices including a resistor structure

#12
20140099767
2014-04-10

Method of manufacturing a semiconductor device that includes a misfet

#13
20140035057
2014-02-06

Integrated circuits with aligned (100) NMOS and (110) PMOS FinFET sidewall channels

#14
20130248930
2013-09-26

Semiconductor device and fabrication method thereof

#15
20120175710
2012-07-12

Integrated circuits with aligned (100) NMOS and (110) PMOS FinFET sidewall channels

#16
20120146049
2012-06-14

JFET devices with increased barrier height and methods of making the same

#17
20120104476
2012-05-03

Electronic device with asymmetric gate strain

#18
20120043613
2012-02-23

Semiconductor device and manufacturing method of the same

#19
20110254089
2011-10-20

SEMICONDUCTOR INTEGRATED CIRCUIT AND METHOD OF FABRICATING SAME

#20
20110151651
2011-06-23

Method for forming integrated circuits with aligned (100) NMOS and (110) PMOS FinFET sidewall channels

#21
20110140203
2011-06-16

Contact implement structure for high density design

#22
20110095343
2011-04-28

Bi-layer nFET embedded stressor element and integration to enhance drive current

#23
20100304540
2010-12-02

SEMICONDUCTOR DEVICE AND METHOD OF FORMING THE SAME

#24
20100301394
2010-12-02

Semiconductor device and fabrication method thereof

#25
20100289085
2010-11-18

Asymmetric semiconductor devices and method of fabricating

#26
20100276693
2010-11-04

FinFET field effect transistor insulated from the substrate

#27
20100267226
2010-10-21

Method of forming a structure over a semiconductor substrate

#28
20100264469
2010-10-21

MOSFET including epitaxial halo region

#29
20100181618
2010-07-22

Extended drain transistor and method of manufacturing the same

#30
20100176426
2010-07-15

Method of manufacturing transistor

#31
20100171099
2010-07-08

Carbon Nanotube Transistor Structure

#32
20100133612
2010-06-03

Electronic device with asymmetric gate strain

#33
20100102400
2010-04-29

Low-k isolation spacers for conductive regions

#34
20100102363
2010-04-29

Air gap spacer formation

#35
20100096706
2010-04-22

Semiconductor transistors having high-K gate dielectric layers, metal gate electrode regions, and low fringing capacitances

#36
20100059801
2010-03-11

Semiconductor device and method for fabricating the same

#37
20100059736
2010-03-11

Heterostructure Nanotube Devices

#38
20100041187
2010-02-18

Semiconductor device and method for forming the same

#39
20100019249
2010-01-28

JFET devices with increased barrier height and methods of making same

#40
20090309141
2009-12-17

Semiconductor device and manufacturing method of the same

#41
20090302310
2009-12-10

Short channel vertical FETs

#42
20090294862
2009-12-03

Non-volatile semiconductor memory device with contact plug electrically conductive in response to light

#43
20090289298
2009-11-26

Self-aligned impact-ionization field effect transistor

#44
20090250774
2009-10-08

Gate structure

#45
20090184348
2009-07-23

Slim Spacer Implementation to Improve Drive Current

#46
20090179284
2009-07-16

Semiconductor transistors having high-K gate dielectric layers, metal gate electrode regions, and low fringing capacitances

#47
20090155973
2009-06-18

Semiconductor device having MOSFET with offset-spacer, and manufacturing method thereof

#48
20090152631
2009-06-18

Semiconductor device and method for forming the same

#49
20090148988
2009-06-11

Method of reducing embedded SiGe loss in semiconductor device manufacturing

#50
20090134462
2009-05-28

Semiconductor integrated circuit and method of fabricating same

#51
20090134381
2009-05-28

Semiconductor device and fabrication method thereof

#52
20090124055
2009-05-14

Transistor structure and method for making same

#53
20090096021
2009-04-16

Semiconductor device having deep trench charge compensation regions and method

#54
20090090939
2009-04-09

Self-assembled sidewall spacer

#55
20090079014
2009-03-26

Transistors with high-k dielectric spacer liner to mitigate lateral oxide encroachement

#56
20090039476
2009-02-12

Apparatus and method for selectively recessing spacers on multi-gate devices

#57
20090014814
2009-01-15

Power semiconductor device having improved performance and method

#58
20090001463
2009-01-01

Finfet field effect transistor insulated from the substrate

#59
20080308873
2008-12-18

Semiconductor device with discontinuous CESL structure

#60
20080308847
2008-12-18

Method of making (100) NMOS and (110) PMOS sidewall surface on the same fin orientation for multiple gate MOSFET with DSB substrate

#61
20080299710
2008-12-04

Carbon nanotube transistor fabrication

#62
20080261388
2008-10-23

Method of forming a structure over a semiconductor substrate

#63
20080239816
2008-10-02

Semiconductor memory device and method of manufacturing the same

#64
20080237753
2008-10-02

Methods of fabricating semiconductor devices and structures thereof

#65
20080211008
2008-09-04

Manufacturing method of flash memory device

#66
20080206964
2008-08-28

Carbon nanotube transistor process with transferred carbon nanotubes

#67
20080203447
2008-08-28

Low-temperature electrically activated gate electrode and method of fabricating same

#68
20080173954
2008-07-24

Semiconductor device including liner insulating film

#69
20080157119
2008-07-03

Stack SiGe for short channel improvement

#70
20080145991
2008-06-19

Slim spacer implementation to improve drive current

#71
20080145982
2008-06-19

Isolation spacer for thin SOI devices

#72
20080142888
2008-06-19

Isolation spacer for thin SOI devices

#73
20080121998
2008-05-29

Apparatus and method for selectively recessing spacers on multi-gate devices

#74
20080087943
2008-04-17

Nonvolatile semiconductor memory device and method of fabricating the same

#75
20080029836
2008-02-07

Structure and method for making high density MOSFET circuits with different height contact lines

#76
20080029834
2008-02-07

Low-k isolation spacers for conductive regions

#77
20080026522
2008-01-31

High performance CMOS device structures and method of manufacture

#78
20070281413
2007-12-06

N-channel MOSFETs comprising dual stressors, and methods for forming the same

#79
20070278599
2007-12-06

Semiconductor device including a selectively formed ETCH stopping layer and methods thereof

#80
20070257324
2007-11-08

Semiconductor devices having gate structures and contact pads that are lower than the gate structures

#81
20070194385
2007-08-23

Gate stacks

#82
20070187773
2007-08-16

STRUCTURE AND METHOD TO INDUCE STRAIN IN A SEMICONDUCTOR DEVICE CHANNEL WITH STRESSED FILM UNDER THE GATE

#83
20070176208
2007-08-02

Hosting structure of nanometric elements and corresponding manufacturing method

#84
20070170472
2007-07-26

Structure and method for making high density mosfet circuits with different height contact lines

#85
20070145430
2007-06-28

CMOS device with asymmetric gate strain

#86
20070126048
2007-06-07

Semiconductor device and method of forming the same

#87
20070122970
2007-05-31

Methods of fabricating memory devices with memory cell transistors having gate sidewall spacers with different dielectric properties

#88
20070117303
2007-05-24

Semiconductor memory device

#89
20070114617
2007-05-24

Semiconductor memory device

#90
20070102775
2007-05-10

Methods of fabricating semiconductor devices and structures thereof

#91
20070102702
2007-05-10

Semiconductor device including active matrix circuit

#92
20070085127
2007-04-19

Semiconductor device and method of manufacturing the same

#93
20070037344
2007-02-15

Semiconductor device and method for fabricating the same

#94
20070034947
2007-02-15

Semiconductor device having deep trench charge compensation regions and method

#95
20070018245
2007-01-25

Fringing field induced localized charge trapping memory

#96
20070018167
2007-01-25

Semiconductor integrated circuit and method of fabricating same

#97
20070013010
2007-01-18

High performance MOS device with graded silicide

#98
20070012990
2007-01-18

Nonvolatile semiconductor memory with transistor whose gate electrode has bird's beak

#99
20070007529
2007-01-11

Semiconductor device and method for forming the same

#100
20070001220
2007-01-04

Nanotube transistor and rectifying devices

#101
20070001217
2007-01-04

Closed loop CESL high performance CMOS device

#102
20060284243
2006-12-21

Electrically erasable programmable read only memory (EEPROM) cell and method for making the same

#103
20060281311
2006-12-14

Integrated circuitry

#104
20060267118
2006-11-30

Semiconductor device and method of manufacturing the same

#105
20060240632
2006-10-26

Semiconductor device including air gap between semiconductor substrate and L-shaped spacer and method of fabricating the same

#106
20060240625
2006-10-26

Power semiconductor device having improved performance and method

#107
20060226558
2006-10-12

Method of manufacturing a semiconductor device and semiconductor device

#108
20060211197
2006-09-21

MOS TRANSISTOR AND METHOD OF MANUFACTURING THE SAME

#109
20060199342
2006-09-07

Method for fabricating semiconductor device

#110
20060186558
2006-08-24

Methods of fabricating scalable two transistor memory devices

#111
20060172500
2006-08-03

Structure and method to induce strain in a semiconductor device channel with stressed film under the gate

#112
20060170117
2006-08-03

Semiconductor device and method for fabricating the same

#113
20060160285
2006-07-20

Semiconductor device having MOSFET with offset-spacer, and manufacturing method thereof

#114
20060138479
2006-06-29

Tensile strained substrate

#115
20060138398
2006-06-29

Semiconductor device and fabrication method thereof

#116
20060113686
2006-06-01

Semiconductor memory device with cell transistors having electrically floating channel bodies to store data

#117
20060081928
2006-04-20

Isolation spacer for thin SOI devices

#118
20060081926
2006-04-20

Method of forming shallow doped junctions having a variable profile gradation of dopants

#119
20060073688
2006-04-06

Gate stacks

#120
20060043616
2006-03-02

FinFET with low gate capacitance and low extrinsic resistance

#121
20060040439
2006-02-23

Temperature stable metal nitride gate electrode

#122
20060027875
2006-02-09

Semiconductor device with gate spacer of positive slope and fabrication method thereof

#123
20060009028
2006-01-12

Anti-reflective coating doped with carbon for use in integrated circuit technology and method of formation

#124
20060008998
2006-01-12

Methods of forming transistors

#125
20060002202
2006-01-05

Mask ROM devices of semiconductor devices and method of forming the same

#126
20050280099
2005-12-22

Temperature stable metal nitride gate electrode

#127
20050253192
2005-11-17

Stepped tip junction with spacer layer

#128
20050247986
2005-11-10

Offset spacer formation for strained channel CMOS transistor

#129
20050247983
2005-11-10

Method of forming a raised source/drain and a semiconductor device employing the same

#130
20050230749
2005-10-20

Semiconductor device having a side wall insulating film and a manufacturing method thereof

#131
20050230748
2005-10-20

Semiconductor memory device and manufacturing method therefor

#132
20050230714
2005-10-20

Semiconductor memory device

#133
20050208725
2005-09-22

Semiconductor device having shared contact and fabrication method thereof

#134
20050205927
2005-09-22

Semiconductor device having MOSFET with offset-spacer, and manufacturing method thereof

#135
20050196927
2005-09-08

Process for integration of a high dielectric constant gate insulator layer in a CMOS device

#136
20050167765
2005-08-04

Semiconductor device with an L-shaped/reversed L-shaped gate side-wall insulating film and method of manufacturing same

#137
20050167754
2005-08-04

Semiconductor device and method of manufacturing the same

#138
20050160585
2005-07-28

Magnetoresistive memory device and method for fabricating the same

#139
20050156237
2005-07-21

Transistor sidewall spacer stress modulation

#140
20050151203
2005-07-14

Temporary self-aligned stop layer is applied on silicon sidewall

#141
20050124130
2005-06-09

Semiconductor fabrication process with asymmetrical conductive spacers

#142
20050098531
2005-05-12

Method of forming a conductive line

#143
20050093070
2005-05-05

Fully silicided NMOS device for electrostatic discharge protection

#144
20050087818
2005-04-28

Semiconductor device and method for fabricating the same

#145
20050074941
2005-04-07

Method of manufacturing semiconductor device

#146
20050072993
2005-04-07

SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME

#147
20050051852
2005-03-10

Memory devices with memory cell transistors having gate sidewell spacers with different dielectric properties

#148
20050037585
2005-02-17

Semiconductor device including air gap between semiconductor substrate and L-shaped spacer and method of fabricating the same

#149
20050037549
2005-02-17

Method for manufacturing semiconductor device having metal silicide

#150
20050017274
2005-01-27

Semiconductor integrated circuitry and method for manufacturing the circuitry

#151
20050009285
2005-01-13

Semiconductor component and method of manufacture