Y10S257/00 - CPC Classification

Active solid-state devices, e.g. transistors, solid-state diodes

• Y10S257/90 » MOSFET type gate sidewall insulating spacer 151
• Y10S257/901 » MOSFET substrate bias 16
• Y10S257/902 » FET with metal source region 19
• Y10S257/903 » FET configuration adapted for use as static memory cell 259
• Y10S257/905 » Plural dram cells share common contact or common trench 79
• Y10S257/906 » Dram with capacitor electrodes used for accessing, e.g. bit line is capacitor plate 89
• Y10S257/907 » Folded bit line dram configuration 36
• Y10S257/908 » Dram configuration with transistors and capacitors of pairs of cells along a straight line between adjacent bit lines 74
• Y10S257/909 » Macrocell arrays, e.g. gate arrays with variable size or configuration of cells 23
• Y10S257/91 » Diode arrays, e.g. diode read-only memory array 50
• Y10S257/911 » Light sensitive array adapted to be scanned by electron beam, e.g. vidicon device 11
• Y10S257/912 » Charge transfer device using both electron and hole signal carriers 2
• Y10S257/913 » with means to absorb or localize unwanted impurities or defects from semiconductors, e.g. heavy metal gettering 19
• Y10S257/914 » Polysilicon containing oxygen, nitrogen, or carbon, e.g. sipos 21
• Y10S257/915 » with titanium nitride portion or region 10
• Y10S257/916 » Narrow band gap semiconductor material, <<1ev 7
• Y10S257/917 » Plural dopants of same conductivity type in same region 4
• Y10S257/918 » Light emitting regenerative switching device, e.g. light emitting scr arrays, circuitry 68
• Y10S257/919 » Elements of similar construction connected in series or parallel to average out manufacturing variations in characteristics 1
• Y10S257/92 » Conductor layers on different levels connected in parallel, e.g. to reduce resistance 19
• Y10S257/921 » Radiation hardened semiconductor device 8
• Y10S257/922 » with means to prevent inspection of or tampering with an integrated circuit, e.g. "smart card", anti-tamper 41
• Y10S257/923 » with means to optimize electrical conductor current carrying capacity, e.g. particular conductor aspect ratio 12
• Y10S257/924 » with passive device, e.g. capacitor, or battery, as integral part of housing or housing element, e.g. cap 79
• Y10S257/925 » Bridge rectifier module 1
• Y10S257/926 » Elongated lead extending axially through another elongated lead 3
• Y10S257/927 » Different doping levels in different parts of PN junction to produce shaped depletion layer 4
• Y10S257/928 » with shorted PN or schottky junction other than emitter junction 13
• Y10S257/929 » PN junction isolated integrated circuit with isolation walls having minimum dopant concentration at intermediate depth in epitaxial layer, e.g. diffused from both surfaces of epitaxial layer 12
• Y10S257/93 » Thermoelectric, e.g. peltier effect cooling 39

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