ClassID:

240269

Y10S257/902 - CPC Classification

Classification description:

Active solid-state devices, e.g. transistors, solid-state diodes FET with metal source region

Recent Application in this class:
#1
20150194432
2015-07-09

Butted contact shape to improve SRAM leakage current

#2
20140246680
2014-09-04

JFET devices with increased barrier height and methods of making same

#3
20130299905
2013-11-14

Butted contact shape to improve SRAM leakage current

#4
20120168754
2012-07-05

Thin film metal-dielectric-metal transistor

#5
20120146049
2012-06-14

JFET devices with increased barrier height and methods of making the same

#6
20110284937
2011-11-24

Spin transistor using N-type and P-type double carrier supply layer structure

#7
20110095346
2011-04-28

SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING SAME

#8
20110095343
2011-04-28

Bi-layer nFET embedded stressor element and integration to enhance drive current

#9
20100276693
2010-11-04

FinFET field effect transistor insulated from the substrate

#10
20100019249
2010-01-28

JFET devices with increased barrier height and methods of making same

#11
20090302310
2009-12-10

Short channel vertical FETs

#12
20090026507
2009-01-29

Semiconductor device with heat-resistant gate

#13
20090001463
2009-01-01

Finfet field effect transistor insulated from the substrate

#14
20080169492
2008-07-17

Spin transistor using stray magnetic field

#15
20080057710
2008-03-06

MOSFETS comprising source/drain recesses with slanted sidewall surfaces, and methods for fabricating the same

#16
20080001260
2008-01-03

MOSFETs comprising source/drain recesses with slanted sidewall surfaces, and methods for fabricating the same

#17
20070034913
2007-02-15

Semiconductor device and method of fabricating same

#18
20050194637
2005-09-08

Semiconductor device for reducing parasitic capacitance produced in the vicinity of a transistor located within the semiconductor device

#19
20050045950
2005-03-03

Semiconductor device and method of fabricating same