ClassID:

240280

Y10S257/913 - CPC Classification

Classification description:

Active solid-state devices, e.g. transistors, solid-state diodes with means to absorb or localize unwanted impurities or defects from semiconductors, e.g. heavy metal gettering

Recent Application in this class:
#1
20090273010
2009-11-05

Removal of impurities from semiconductor device layers

#2
20090102024
2009-04-23

Semiconductor device and method for fabricating same

#3
20080111203
2008-05-15

Wafer-level packaging of micro devices

#4
20080020168
2008-01-24

SILICON ON INSULATOR STRUCTURE WITH A SINGLE CRYSTAL CZ SILICON DEVICE LAYER HAVING A REGION WHICH IS FREE OF AGGLOMERATED INTRINSIC POINT DEFECTS

#5
20070238266
2007-10-11

Non-uniform minority carrier lifetime distributions in high performance silicon power devices

#6
20070080335
2007-04-12

Gettering using voids formed by surface transformation

#7
20070075401
2007-04-05

Gettering using voids formed by surface transformation

#8
20070037309
2007-02-15

Semiconductor device and method for manufacturing the same

#9
20060255370
2006-11-16

Method of manufacturing semiconductor device and semiconductor device

#10
20050250274
2005-11-10

Gettering using voids formed by surface transformation

#11
20050179053
2005-08-18

Solid-state image device

#12
20050130394
2005-06-16

Process for implementing oxygen into a silicon wafer having a region which is free of agglomerated intrinsic point defects

#13
20050112888
2005-05-26

Semiconductor metal contamination reduction for ultra-thin gate dielectrics

#14
20050098092
2005-05-12

Epitaxial silicon wafer with intrinsic gettering and a method for the preparation thereof

#15
20050045900
2005-03-03

Protected organic electronic device structures incorporating pressure sensitive adhesive and desiccant

#16
20050045880
2005-03-03

Semiconductor device

#17
20050029683
2005-02-10

Gettering using voids formed by surface transformation

#18
20050017273
2005-01-27

Gettering using voids formed by surface transformation

#19
20050006796
2005-01-13

Process for making non-uniform minority carrier lifetime distribution in high performance silicon power devices