ClassID:

240287

Y10S257/92 - CPC Classification

Classification description:

Active solid-state devices, e.g. transistors, solid-state diodes Conductor layers on different levels connected in parallel, e.g. to reduce resistance

Recent Application in this class:
#1
20230110247
2023-04-13

A SCALABLE POLYLITHIC ON-PACKAGE INTEGRATABLE APPARATUS AND METHOD

#2
20110024713
2011-02-03

Nonvolatile memory device with recording layer having two portions of different nitrogen amounts

#3
20080111243
2008-05-15

High performance system-on-chip using post passivation process

#4
20080093745
2008-04-24

High performance system-on-chip using post passivation process

#5
20080044977
2008-02-21

High performance system-on-chip using post passivation process

#6
20080044976
2008-02-21

High performance system-on-chip using post passivation process

#7
20080042289
2008-02-21

High performance system-on-chip using post passivation process

#8
20080042273
2008-02-21

High performance system-on-chip using post passivation process

#9
20080042239
2008-02-21

High performance system-on-chip using post passivation process

#10
20080042238
2008-02-21

High performance system-on-chip using post passivation process

#11
20080038869
2008-02-14

High performance system-on-chip using post passivation process

#12
20080035974
2008-02-14

High performance system-on-chip using post passivation process

#13
20080035972
2008-02-14

High performance system-on-chip using post passivation process

#14
20080029836
2008-02-07

Structure and method for making high density MOSFET circuits with different height contact lines

#15
20070170472
2007-07-26

Structure and method for making high density mosfet circuits with different height contact lines

#16
20070042561
2007-02-22

Semiconductor device and production method thereof

#17
20050184358
2005-08-25

High performance system-on-chip using post passivation process

#18
20050067706
2005-03-31

Semiconductor device and production method thereof

#19
20050023564
2005-02-03

Arrays of nonvolatile memory cells wherein each cell has two conductive floating gates