ClassID:

241991

Y10S438/902 - CPC Classification

Classification description:

Semiconductor device manufacturing: process Capping layer

Recent Application in this class:
#1
20110201200
2011-08-18

Diodes, and methods of forming diodes

#2
20100330770
2010-12-30

Diodes, and methods of forming diodes

#3
20100227142
2010-09-09

Ultra-thin film formation using gas cluster ion beam processing

#4
20100133656
2010-06-03

Method using multiple layer annealing cap for fabricating group III-nitride semiconductor device structures and devices formed thereby

#5
20090294967
2009-12-03

Diodes, and methods of forming diodes

#6
20090205676
2009-08-20

Cleaning method and substrate processing apparatus

#7
20090176369
2009-07-09

Low-H plasma treatment with Nanneal for electronic memory devices

#8
20080280411
2008-11-13

Method for manufacturing phase change memory device using a patterning process

#9
20080081486
2008-04-03

Field effect transistor having a stressed dielectric layer based on an enhanced device topography

#10
20070178713
2007-08-02

Method for forming a dielectric layer with an air gap, and a structure including the dielectric layer with the air gap

#11
20070141770
2007-06-21

Semiconductor device having an organic anti-reflective coating (ARC) and method therefor

#12
20070012987
2007-01-18

Memory cell with selective deposition of refractory metals

#13
20060189048
2006-08-24

Method to strain NMOS devices while mitigating dopant diffusion for PMOS using a capped poly layer

#14
20060128164
2006-06-15

Chemical treatment of semiconductor substrates

#15
20060094251
2006-05-04

Multi-layer film stack for extinction of substrate reflections during patterning

#16
20060086954
2006-04-27

Multi-layer film stack for extinction of substrate reflections during patterning

#17
20050242419
2005-11-03

Method of fabricating an apparatus including a sealed cavity

#18
20050181596
2005-08-18

Semiconductor device having an organic anti-reflective coating (ARC) and method therefor

#19
20050164431
2005-07-28

Integration of pre-S/D anneal selective nitride/oxide composite cap for improving transistor performance

#20
20050064610
2005-03-24

Site-specific methodology for localization and analyzing junction defects in mosfet devices

#21
20050059228
2005-03-17

Integration of pre-S/D anneal selective nitride/oxide composite cap for improving transistor performance

#22
20050031786
2005-02-10

Method for reducing tungsten film roughness and improving step coverage

#23
20050026338
2005-02-03

Semiconductor device having an organic anti-reflective coating (ARC) and method therefor

#24
20050009308
2005-01-13

Chemical treatment of semiconductor substrates