241991 ⎘
Semiconductor device manufacturing: process Capping layer
Diodes, and methods of forming diodes
#2Diodes, and methods of forming diodes
#3Ultra-thin film formation using gas cluster ion beam processing
#4Method using multiple layer annealing cap for fabricating group III-nitride semiconductor device structures and devices formed thereby
#5Diodes, and methods of forming diodes
#6Cleaning method and substrate processing apparatus
#7Low-H plasma treatment with Nanneal for electronic memory devices
#8Method for manufacturing phase change memory device using a patterning process
#9Field effect transistor having a stressed dielectric layer based on an enhanced device topography
#10Method for forming a dielectric layer with an air gap, and a structure including the dielectric layer with the air gap
#11Semiconductor device having an organic anti-reflective coating (ARC) and method therefor
#12Memory cell with selective deposition of refractory metals
#13Method to strain NMOS devices while mitigating dopant diffusion for PMOS using a capped poly layer
#14Chemical treatment of semiconductor substrates
#15Multi-layer film stack for extinction of substrate reflections during patterning
#16Multi-layer film stack for extinction of substrate reflections during patterning
#17Method of fabricating an apparatus including a sealed cavity
#18Semiconductor device having an organic anti-reflective coating (ARC) and method therefor
#19Integration of pre-S/D anneal selective nitride/oxide composite cap for improving transistor performance
#20Site-specific methodology for localization and analyzing junction defects in mosfet devices
#21Integration of pre-S/D anneal selective nitride/oxide composite cap for improving transistor performance
#22Method for reducing tungsten film roughness and improving step coverage
#23Semiconductor device having an organic anti-reflective coating (ARC) and method therefor
#24Chemical treatment of semiconductor substrates