Y10S438/00 - CPC Classification

Semiconductor device manufacturing: process

• Y10S438/90 » Bulk effect device making 130
• Y10S438/901 » Capacitive junction 6
• Y10S438/902 » Capping layer 24
• Y10S438/903 » Catalyst aided deposition 19
• Y10S438/904 » Charge carrier lifetime control 3
• Y10S438/905 » Cleaning of reaction chamber 130
• Y10S438/906 » Cleaning of wafer as interim step 159
• Y10S438/907 » Continuous processing 43
• Y10S438/909 » Controlled atmosphere 37
• Y10S438/91 » Controlling charging state at semiconductor-insulator interface 9
• Y10S438/911 » Differential oxidation and etching 18
• Y10S438/912 » Displacing pn junction 4
• Y10S438/913 » Diverse treatments performed in unitary chamber 29
• Y10S438/914 » Doping 28
• Y10S438/926 » Dummy metallization 122
• Y10S438/927 » Electromigration resistant metallization 27
• Y10S438/928 » Front and rear surface processing 84
• Y10S438/929 » Eutectic semiconductor 4
• Y10S438/93 » Ternary or quaternary semiconductor comprised of elements from three different groups, e.g. I-III-V 13
• Y10S438/931 » Silicon carbide semiconductor 172
• Y10S438/932 » Boron nitride semiconductor 13
• Y10S438/933 » Germanium or silicon or Ge-Si on III-V 174
• Y10S438/934 » Sheet resistance, i.e. dopant parameters 1
• Y10S438/935 » Gas flow control 25
• Y10S438/936 » Graded energy gap 14
• Y10S438/937 » Hillock prevention 51
• Y10S438/938 » Lattice strain control or utilization 118
• Y10S438/939 » Langmuir-blodgett film utilization 3
• Y10S438/94 » Laser ablative material removal 103
• Y10S438/941 » Loading effect mitigation 4
• Y10S438/942 » Masking 174
• Y10S438/953 » Making radiation resistant device 7
• Y10S438/954 » Making oxide-nitride-oxide device 89
• Y10S438/955 » Melt-back 2
• Y10S438/956 » Making multiple wavelength emissive device 18
• Y10S438/957 » Making metal-insulator-metal device 81
• Y10S438/958 » Passivation layer 60
• Y10S438/959 » Mechanical polishing of wafer 45
• Y10S438/96 » Porous semiconductor 39
• Y10S438/961 » Ion beam source and generation 21
• Y10S438/962 » Quantum dots and lines 153
• Y10S438/963 » Removing process residues from vertical substrate surfaces 28
• Y10S438/964 » Roughened surface 58
• Y10S438/965 » Shaped junction formation 3
• Y10S438/966 » Selective oxidation of ion-amorphousized layer 5
• Y10S438/967 » Semiconductor on specified insulator 30
• Y10S438/968 » Semiconductor-metal-semiconductor 3
• Y10S438/969 » Simultaneous formation of monocrystalline and polycrystalline regions 11
• Y10S438/97 » Specified etch stop material 20
• Y10S438/971 » Stoichiometric control of host substrate composition 0
• Y10S438/972 » Stored charge erasure 4
• Y10S438/973 » Substrate orientation 44
• Y10S438/974 » Substrate surface preparation 65
• Y10S438/975 » Substrate or mask aligning feature 175
• Y10S438/976 » Temporary protective layer 73
• Y10S438/977 » Thinning or removal of substrate 275
• Y10S438/978 » forming tapered edges on substrate or adjacent layers 45
• Y10S438/979 » Tunnel diodes 24
• Y10S438/98 » Utilizing process equivalents or options 7
• Y10S438/981 » Utilizing varying dielectric thickness 99
• Y10S438/982 » Varying orientation of devices in array 37
• Y10S438/983 » Zener diodes 25