ClassID:

241992

Y10S438/903 - CPC Classification

Classification description:

Semiconductor device manufacturing: process Catalyst aided deposition

Recent Application in this class:
#1
20100140588
2010-06-10

CATALYST SUPPORT SUBSTRATE, METHOD FOR GROWING CARBON NANOTUBES USING THE SAME, AND TRANSISTOR USING CARBON NANOTUBES

#2
20100117041
2010-05-13

Resistive memory device and method of fabricating the same

#3
20100041195
2010-02-18

Method of manufacturing silicon carbide self-aligned epitaxial MOSFET for high powered device applications

#4
20090253248
2009-10-08

Method of manufacturing silicon nano-structure

#5
20090001363
2009-01-01

Zinc oxide semiconductor and method of manufacturing the same

#6
20080233744
2008-09-25

Carbon nanotube switches for memory, RF communications and sensing applications, and methods of making the same

#7
20080203398
2008-08-28

Silicon carbide self-aligned epitaxial MOSFET for high powered device applications

#8
20070283886
2007-12-13

Apparatus for integration of barrier layer and seed layer

#9
20070243316
2007-10-18

Method for conditioning a microelectronics device deposition chamber

#10
20070212876
2007-09-13

Method for manufacturing wiring substrate

#11
20060240974
2006-10-26

Catalyst support substrate, method for growing carbon nanotubes using the same, and the transistor using carbon nanotubes

#12
20060228905
2006-10-12

Method for conditioning a microelectronics device deposition chamber

#13
20060035473
2006-02-16

Method for stabilizing high pressure oxidation of a semiconductor device

#14
20050279283
2005-12-22

Method for stabilizing high pressure oxidation of a semiconductor device

#15
20050206018
2005-09-22

Oxide film forming method

#16
20050150460
2005-07-14

Insitu post atomic layer deposition destruction of active species

#17
20050139948
2005-06-30

Integration of barrier layer and seed layer

#18
20050040847
2005-02-24

Process for producing a nanoelement arrangement, and nanoelement arrangement

#19
20050028936
2005-02-10

Apparatus for stabilizing high pressure oxidation of a semiconductor device