ClassID:

242000

Y10S438/911 - CPC Classification

Classification description:

Semiconductor device manufacturing: process Differential oxidation and etching

Recent Application in this class:
#1
20110111448
2011-05-12

DEVICE COMPRISING A FIELD OF TIPS USED IN BIOTECHNOLOGY APPLICATIONS

#2
20100317186
2010-12-16

Enhancing NAND flash floating gate performance

#3
20100295148
2010-11-25

Methods of uniformly removing silicon oxide and an intermediate semiconductor device

#4
20100248435
2010-09-30

Method of selective nitridation

#5
20080171438
2008-07-17

Methods of uniformly removing silicon oxide and a method of removing a sacrificial oxide

#6
20080160704
2008-07-03

Ion implantation method for high voltage device

#7
20070218606
2007-09-20

Semiconductor device and method of manufacture thereof

#8
20070218605
2007-09-20

Semiconductor device and method of manufacture thereof

#9
20070202643
2007-08-30

Method for separately optimizing spacer width for two or more transistor classes using a recess spacer integration

#10
20070190799
2007-08-16

Refurbishing a wafer having a low-k dielectric layer

#11
20070190798
2007-08-16

REMOVING A LOW-K DIELECTRIC LAYER FROM A WAFER

#12
20070190791
2007-08-16

REMOVING A LOW-K DIELECTRIC LAYER FROM A WAFER BY CHEMICAL MECHANICAL POLISHING

#13
20070190790
2007-08-16

FINE GRINDING A LOW-K DIELECTRIC LAYER OFF A WAFER

#14
20070178661
2007-08-02

Method of forming a semiconductor isolation trench

#15
20070020786
2007-01-25

Device comprising a field of tips used in biotechnology applications

#16
20060160364
2006-07-20

Refreshing wafers having low-k dielectric materials

#17
20050079726
2005-04-14

Self-aligned mask formed utilizing differential oxidation rates of materials

#18
20050035418
2005-02-17

Selectively deposited silicon oxide layers on a silicon substrate

#19
14229594
2014-11-11

Integration of a memory transistor into high-K, metal gate CMOS process flow