ClassID:

242016

Y10S438/927 - CPC Classification

Classification description:

Semiconductor device manufacturing: process Electromigration resistant metallization

Recent Application in this class:
#1
20250191972
2025-06-12

METHODS OF EXPOSING CONDUCTIVE VIAS OF SEMICONDUCTOR DEVICES

#2
20240203786
2024-06-20

SELF-FORMING, SELF-ALIGNED BARRIERS FOR BACK-END INTERCONNECTS AND METHODS OF MAKING SAME

#3
20210183697
2021-06-17

Methods of exposing conductive Vias of semiconductor devices and related semiconductor devices

#4
20150262899
2015-09-17

Method and structure for determining thermal cycle reliability

#5
20140183740
2014-07-03

Methods of exposing conductive vias of semiconductor devices and associated structures

#6
20120248608
2012-10-04

Self-forming, self-aligned barriers for back-end interconnects and methods of making same

#7
20100136738
2010-06-03

Solid state imaging device having wirings with diffusion prevention film

#8
20090302476
2009-12-10

Structures and methods to enhance Cu interconnect electromigration (EM) performance

#9
20090108451
2009-04-30

Semiconductor device and method for manufacturing the same

#10
20090047780
2009-02-19

Method for forming composite barrier layer

#11
20080293257
2008-11-27

Dual liner capping layer interconnect structure

#12
20080290519
2008-11-27

Dual liner capping layer interconnect structure

#13
20080224135
2008-09-18

Method and structure for determining thermal cycle reliability

#14
20080160656
2008-07-03

Addressable hierarchical metal wire test methodology

#15
20080122045
2008-05-29

Dual liner capping layer interconnect structure and method

#16
20080017993
2008-01-24

Semiconductor device and method of manufacturing the same

#17
20070272875
2007-11-29

Gating grid and method of manufacture

#18
20070102753
2007-05-10

Cross diffusion barrier layer in gate structure

#19
20070075343
2007-04-05

Solid-state imaging device, solid-state imaging apparatus and methods for manufacturing the same

#20
20060273460
2006-12-07

Structure for determining thermal cycle reliability

#21
20060121734
2006-06-08

Copper adhesion improvement device and method

#22
20060027925
2006-02-09

Composite barrier layer

#23
20050285205
2005-12-29

Semiconductor device

#24
20050206002
2005-09-22

Semiconductor device having a wiring layer of damascene structure and method for manufacturing the same

#25
20050186689
2005-08-25

Method and structure for determining thermal cycle reliability

#26
20050067700
2005-03-31

Semiconductor device and method of manufacturing the same

#27
20050032316
2005-02-10

Cross diffusion barrier layer in polysilicon

#28
20050023696
2005-02-03

Semiconductor device having a wiring layer of damascene structure and method for manufacturing the same