242016 ⎘
Semiconductor device manufacturing: process Electromigration resistant metallization
METHODS OF EXPOSING CONDUCTIVE VIAS OF SEMICONDUCTOR DEVICES
#2SELF-FORMING, SELF-ALIGNED BARRIERS FOR BACK-END INTERCONNECTS AND METHODS OF MAKING SAME
#3Methods of exposing conductive Vias of semiconductor devices and related semiconductor devices
#4Method and structure for determining thermal cycle reliability
#5Methods of exposing conductive vias of semiconductor devices and associated structures
#6Self-forming, self-aligned barriers for back-end interconnects and methods of making same
#7Solid state imaging device having wirings with diffusion prevention film
#8Structures and methods to enhance Cu interconnect electromigration (EM) performance
#9Semiconductor device and method for manufacturing the same
#10Method for forming composite barrier layer
#11Dual liner capping layer interconnect structure
#12Dual liner capping layer interconnect structure
#13Method and structure for determining thermal cycle reliability
#14Addressable hierarchical metal wire test methodology
#15Dual liner capping layer interconnect structure and method
#16Semiconductor device and method of manufacturing the same
#17Gating grid and method of manufacture
#18Cross diffusion barrier layer in gate structure
#19Solid-state imaging device, solid-state imaging apparatus and methods for manufacturing the same
#20Structure for determining thermal cycle reliability
#21Copper adhesion improvement device and method
#22Composite barrier layer
#23Semiconductor device
#24Semiconductor device having a wiring layer of damascene structure and method for manufacturing the same
#25Method and structure for determining thermal cycle reliability
#26Semiconductor device and method of manufacturing the same
#27Cross diffusion barrier layer in polysilicon
#28Semiconductor device having a wiring layer of damascene structure and method for manufacturing the same