Y10S438/932 - CPC Classification Index

ClassID:

242021 ⎘

Y10S438/932 - CPC Classification

Classification description:

Semiconductor device manufacturing: process Boron nitride semiconductor

Recent Application in this class:

20140295673

2014-10-02

Silane or borane treatment of metal thin films

20140273428

2014-09-18

Silane or borane treatment of metal thin films

20130330932

2013-12-12

Hardmask materials

20120276752

2012-11-01

Hardmask materials

20110135557

2011-06-09

Hardmask materials

20090130837

2009-05-21

In situ deposition of a low κ dielectric layer, barrier layer, etch stop, and anti-reflective coating for damascene application

20080286589

2008-11-20

Incorporation of nitrogen into high k dielectric film

20070045856

2007-03-01

Mixed metal nitride and boride barrier layers

20060214193

2006-09-28

Field effect transistor

#10

20060189165

2006-08-24

Method and apparatus for non-aggressive plasma-enhanced vapor deposition of dielectric films

#11

20060089007

2006-04-27

In situ deposition of a low K dielectric layer, barrier layer, etch stop, and anti-reflective coating for damascene application

#12

20050212119

2005-09-29

Incorporation of nitrogen into high k dielectric film

#13

20050026404

2005-02-03

Method and apparatus for non-aggressive plasma-enhanced vapor deposition of dielectric films