Y10S438/936 - CPC Classification Index

ClassID:

242025 ⎘

Y10S438/936 - CPC Classification

Classification description:

Semiconductor device manufacturing: process Graded energy gap

Recent Application in this class:

20150137063

2015-05-21

Resistive switching in memory cells

20120248396

2012-10-04

Resistive switching in memory cells

20110062413

2011-03-17

Light-emitting diode and method for fabrication thereof

20110031530

2011-02-10

Field effect transistor with a heterostructure

20090121289

2009-05-14

Field effect transistor with a heterostructure

20080315176

2008-12-25

Light-emitting diode and method for fabrication thereof

20070285965

2007-12-13

Resistance change memory device

20070145405

2007-06-28

Light emitting device and method of fabricating the same

20070045664

2007-03-01

Semiconductor device and manufacturing method of the same

#10

20070013002

2007-01-18

Field effect transistor with a heterostructure and associated production method

#11

20060276977

2006-12-07

Techniques and devices for characterizing spatially non-uniform curvatures and stresses in thin-film structures on substrates with non-local effects

#12

20060163612

2006-07-27

SiSnGeand related alloy heterostructures based on Si, Ge and Sn

#13

20050133866

2005-06-23

Field effect transistor and method of fabrication

#14

20050017275

2005-01-27

Field effect transistor and method of fabrication