ClassID:

242047

Y10S438/958 - CPC Classification

Classification description:

Semiconductor device manufacturing: process Passivation layer

Recent Application in this class:
#1
20200006593
2020-01-02

Vertical structure LEDs

#2
20190312177
2019-10-10

Vertical structure LEDs

#3
20190172974
2019-06-06

Vertical structure LEDs

#4
20180158986
2018-06-07

Vertical structure LEDs

#5
20170133476
2017-05-11

Insulated gate field effect transistor having passivated schottky barriers to the channel

#6
20160380151
2016-12-29

Vertical structure LEDs

#7
20160079482
2016-03-17

Vertical structure LEDs

#8
20150048307
2015-02-19

Vertical structure LEDs

#9
20150031152
2015-01-29

Method of manufacturing organic light-emitting display apparatus

#10
20140284666
2014-09-25

Insulated gate field effect transistor having passivated schottky barriers to the channel

#11
20140054639
2014-02-27

Method of fabricating vertical structure LEDs

#12
20130320508
2013-12-05

Semiconductor device and method of manufacturing the same

#13
20130140629
2013-06-06

Insulated gate field effect transistor having passivated schottky barriers to the channel

#14
20130113086
2013-05-09

Self-leveling planarization materials for microelectronic topography

#15
20120161300
2012-06-28

Ionizing radiation blocking in IC chip to reduce soft errors

#16
20110210376
2011-09-01

Insulated gate field effect transistor having passivated schottky barriers to the channel

#17
20110193128
2011-08-11

Method of fabricating vertical structure LEDs

#18
20110117735
2011-05-19

Methods of fabricating non-volatile memory devices having carbon nanotube layer and passivation layer

#19
20110031625
2011-02-10

Method of processing a contact pad, method of manufacturing a contact pad, and integrated circuit element

#20
20100308368
2010-12-09

Method of fabricating vertical structure LEDs

#21
20100090251
2010-04-15

Surface treatment and passivation of AlGaN/GaN HEMT

#22
20100072610
2010-03-25

Process for precision placement of integrated circuit overcoat material

#23
20100032579
2010-02-11

Method of passivating and encapsulating CdTe and CZT segmented detectors

#24
20090278161
2009-11-12

Method of fabricating vertical structure LEDs

#25
20090209070
2009-08-20

Method for manufacturing thin film transistor having hydrogen feeding layer formed between a metal gate and a gate insulating film

#26
20090115074
2009-05-07

Method of processing a contact pad, method of manufacturing a contact pad, and integrated circuit element

#27
20090039515
2009-02-12

Ionizing radiation blocking in IC chip to reduce soft errors

#28
20080191261
2008-08-14

Nonvolatile memory devices and methods of fabricating the same

#29
20080182350
2008-07-31

Method for fabricating a pixel structure of a liquid crystal display

#30
20080057720
2008-03-06

Method for patterning contact etch stop layers by using a planarization process

#31
20080036046
2008-02-14

Process for precision placement of integrated circuit overcoat material

#32
20080001166
2008-01-03

Method of fabricating vertical structure LEDs

#33
20070295986
2007-12-27

Method of fabricating vertical structure LEDs

#34
20070173073
2007-07-26

Porous silicon dielectric

#35
20070026591
2007-02-01

Insulated gate field effect transistor having passivated schottky barriers to the channel

#36
20060292742
2006-12-28

Manufacturing method for packaged semiconductor device

#37
20060264062
2006-11-23

Method using TEOS ramp-up during TEOS/ozone CVD for improved gap-fill

#38
20060244001
2006-11-02

Method of fabricating vertical structure LEDs

#39
20060199396
2006-09-07

Method of passivating semiconductor device

#40
20060163742
2006-07-27

Semiconductor component with passivation layer

#41
20060154488
2006-07-13

Semiconductor device and fabrication process thereof

#42
20060148273
2006-07-06

Method using TEOS ramp-up during TEOS/ozone CVD for improved gap-fill

#43
20060134860
2006-06-22

Semiconductor processing methods

#44
20060108576
2006-05-25

Layer system comprising a silicon layer and a passivation layer, method for production a passivation layer on a silicon layer and the use of said system and method

#45
20060099730
2006-05-11

Method of fabricating vertical structure LEDs

#46
20060094251
2006-05-04

Multi-layer film stack for extinction of substrate reflections during patterning

#47
20060086954
2006-04-27

Multi-layer film stack for extinction of substrate reflections during patterning

#48
20060071592
2006-04-06

Dielectric barrier layer films

#49
20060071230
2006-04-06

Method of fabricating vertical structure LEDs

#50
20060063386
2006-03-23

Method for photoresist stripping and treatment of low-k dielectric material

#51
20060022337
2006-02-02

Hermetic chip in wafer form

#52
20050266676
2005-12-01

Multi-layer dielectric and method of forming same

#53
20050194684
2005-09-08

Packaged semiconductor device

#54
20050176218
2005-08-11

Method of using a setter having a recess in manufacturing a net-shape semiconductor wafer

#55
20050158978
2005-07-21

Hermetic passivation structure with low capacitance

#56
20050098792
2005-05-12

Method of fabricating vertical structure LEDs

#57
20050090034
2005-04-28

Method and apparatus for fabrication of passivated microfluidic structures in semiconductor substrates

#58
20050079688
2005-04-14

Method of passivating semiconductor device

#59
20050064730
2005-03-24

Method using TEOS ramp-up during TEOS/ozone CVD for improved gap-fill

#60
20050006768
2005-01-13

Dielectric barrier layer films

#61
14022315
2014-11-25

Biosensor and system and process for forming