242059 ⎘
Semiconductor device manufacturing: process Specified etch stop material
Sidewall-free CESL for enlarging ILD gap-fill window
#2Sidewall free CESL for enlarging ILD gap-fill window
#3Integrated circuit having an edge passivation and oxidation resistant layer and method
#4Sidewall-Free CESL for Enlarging ILD Gap-Fill Window
#5Method for an integrated circuit contact
#6Polycarbosilane buried etch stops in interconnect structures
#7Method of forming contact plug in semiconductor
#8Method for patterning contact etch stop layers by using a planarization process
#9Method for an integrated circuit contact
#10Integrated circuit having an edge passivation and oxidation resistant layer and method
#11Light emitting device and method of fabricating the same
#12Polycarbosilane buried etch stops in interconnect structures
#13Technique for creating different mechanical strain by forming a contact etch stop layer stack having differently modified intrinsic stress
#14Anti-reflective coating doped with carbon for use in integrated circuit technology and method of formation
#15Methods of fabricating semiconductor devices including polysilicon resistors and related devices
#16Method for fabricating semiconductor device
#17Structure and method of forming an enlarged head on a plug to eliminate the enclosure requirement
#18Method for an integrated circuit contact
#19Method for an integrated circuit contact
#20Method for an integrated circuit contact