ClassID:

242071

Y10S438/982 - CPC Classification

Classification description:

Semiconductor device manufacturing: process Varying orientation of devices in array

Recent Application in this class:
#1
20170047359
2017-02-16

Semiconductor device and manufacturing method thereof

#2
20150311439
2015-10-29

Semiconductor device and manufacturing method thereof

#3
20150014789
2015-01-15

Integrated circuits with aligned (100) NMOS and (110) PMOS finFET sidewall channels

#4
20140091280
2014-04-03

Array substrate and manufacturing method thereof, display device

#5
20140035057
2014-02-06

Integrated circuits with aligned (100) NMOS and (110) PMOS FinFET sidewall channels

#6
20130214434
2013-08-22

Semiconductor device and manufacturing method thereof

#7
20120211874
2012-08-23

Semiconductor device and manufacturing method thereof

#8
20120175710
2012-07-12

Integrated circuits with aligned (100) NMOS and (110) PMOS FinFET sidewall channels

#9
20110312111
2011-12-22

Semiconductor device and manufacturing method thereof

#10
20110159771
2011-06-30

Semiconductor device and manufacturing method thereof

#11
20110151651
2011-06-23

Method for forming integrated circuits with aligned (100) NMOS and (110) PMOS FinFET sidewall channels

#12
20110111541
2011-05-12

Semiconductor device and method for manufacturing the same

#13
20100237354
2010-09-23

Semiconductor device and method for manufacturing the same

#14
20090275196
2009-11-05

Semiconductor device and manufacturing method thereof

#15
20090103292
2009-04-23

Image display unit with light emitting devices having a resin surrounding the light emitting devices

#16
20080308847
2008-12-18

Method of making (100) NMOS and (110) PMOS sidewall surface on the same fin orientation for multiple gate MOSFET with DSB substrate

#17
20080305589
2008-12-11

Semiconductor device and method for manufacturing the same

#18
20080165577
2008-07-10

Semiconductor device

#19
20080121885
2008-05-29

Thin film transistor array panel of active liquid crystal display and fabrication method thereof

#20
20080073719
2008-03-27

Semiconductor device

#21
20080068882
2008-03-20

Semiconductor device

#22
20080055974
2008-03-06

Semiconductor device

#23
20070241395
2007-10-18

High density memory array having increased channel widths

#24
20070158745
2007-07-12

Semiconductor device and manufacturing method thereof

#25
20070087644
2007-04-19

Method of producing image display unit

#26
20060273067
2006-12-07

Polarizer based on a nanowire grid

#27
20060189105
2006-08-24

Drive circuit of active matrix device and manufacturing method thereof

#28
20060110863
2006-05-25

Semiconductor device, and method for manufacturing the same

#29
20060097301
2006-05-11

High density memory devices having improved channel widths and cell size

#30
20060081921
2006-04-20

Integrated circuit device having non-linear active area pillars

#31
20060076623
2006-04-13

Method of forming an integrated circuit structure on a hybrid crystal oriented substrate

#32
20060076616
2006-04-13

High density memory array having increased channel widths

#33
20060043472
2006-03-02

High density access transistor having increased channel width and methods of fabricating such devices

#34
20060014337
2006-01-19

Semiconductor device and method for manufacturing the same

#35
20050280028
2005-12-22

Semiconductor device

#36
20050224875
2005-10-13

High mobility plane CMOS SOI

#37
20050213379
2005-09-29

Semiconductor device

#38
13915701
2015-03-03

Quantum dot-polymer nanocomposite for optical sensing