Patents-Review.com
ClassID:

248365 ⎘

Y10T117/00 - CPC Classification

Classification description:

Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor

Sub-classes:
Recent Application in this class:
#1
20250122640
2025-04-17

DEVICES AND METHODS FOR GROWING CRYSTALS

 #2
20240150931
2024-05-09

LARGE DIAMETER SILICON CARBIDE SINGLE CRYSTALS AND APPARATUS AND METHOD OF MANUFACTURE THEREOF

 #3
20240110307
2024-04-04

METHODS AND SYSTEMS FOR PRODUCING COMPOSITE CRYSTALS

 #4
20230193512
2023-06-22

Vapor phase epitaxial growth device

 #5
20230160094
2023-05-25

Ingot puller apparatus that use a solid-phase dopant

 #6
20230160093
2023-05-25

METHODS FOR PRODUCING A SINGLE CRYSTAL SILICON INGOT USING BORIC ACID AS A DOPANT

 #7
20220356599
2022-11-10

DEVICES AND METHODS FOR GROWING CRYSTALS

 #8
20220170177
2022-06-02

Single crystal furnace

 #9
20220106704
2022-04-07

Vapor deposition device and method for manufacturing epitaxial silicon wafer

 #10
20220056612
2022-02-24

Devices and methods for growing crystals

 #11
20210189591
2021-06-24

Large diameter silicon carbide single crystals and apparatus and method of manufacture thereof

 #12
20210087706
2021-03-25

Apparatus for producing bulk silicon carbide

 #13
20200407869
2020-12-31

Methods for producing a single crystal silicon ingot using boric acid as a dopant and ingot puller apparatus that use a solid-phase dopant

 #14
20200270767
2020-08-27

Vapor phase epitaxial growth device

 #15
20200173014
2020-06-04

Sample stage/holder for improved thermal and gas flow control at elevated growth temperatures

 #16
20170314162
2017-11-02

Method for cleaning exhaust passage for semiconductor crystal manufacturing device

 #17
20150068457
2015-03-12

Apparatus for producing bulk silicon carbide

 #18
20130306109
2013-11-21

Apparatus for cleaning exhaust passage for semiconductor crystal manufacturing device

 #19
20130180447
2013-07-18

Susceptor and method for manufacturing epitaxial wafer