251887 ⎘
Stock material or miscellaneous articles; Magnetic recording head; Magnetoresistive Multilayer
Sub-classes:Magnetoresistive sensor with stop-layers
#2CoFe/Ni multilayer film with perpendicular anisotropy for microwave assisted magnetic recording
#3Magnetoresistive sensor with SAF structure having amorphous alloy layer
#4Higher stability read head utilizing a partial milling process
#5TMR device with novel free layer structure
#6TMR device with novel free layer structure
#7CoFe/Ni multilayer film with perpendicular anisotropy for microwave assisted magnetic recording
#8Magnetoresistive sensor with SAF structure having crystalline layer and amorphous layer
#9Three-dimensional magnetic memory with multi-layer data storage layers
#10Method of making a high thermal stability reference structure with out-of-plane anisotropy for magnetic device applications
#11Reader structure
#12High thermal stability reference structure with out-of-plane anisotropy for magnetic device applications
#13Current-perpendicular-to-plane magnetoresistive read sensor with grooved contact and free layers
#14Stack with wide seed layer
#15Electrically conductive underlayer to grow FePt granular media with (001) texture on glass substrates
#16Magnetoresistive sensor with stop-layers
#17MR enhancing layer (MREL) for spintronic devices
#18Magnetic devices having shields including a nickel alloy
#19CoFe-based heusler alloy and spintronics devices using the same
#20Stack with wide seed layer
#21Current-perpendicular-to-the-plane (CPP) magnetoresistive sensor with multilayer reference layer including a Heusler alloy
#22High thermal stability reference structure with out-of-plane aniotropy to magnetic device applications
#23Method for manufacturing a magnetic head
#24Tunneling magnetoresistance (TMR) read sensor with a long diffusion path and ex-situ interfaces in a sense layer structure
#25Magnetoresistive elements and memory devices including the same
#26Magnetic element with dual magnetic moments
#27Magnetoresistive head having perpendicularly offset anisotropy films and a hard disk drive using the same
#28Magnetoresistance Device and Memory Device Including the Magnetoresistance Device
#29Reader stop-layers
#30Varyinig morphology in magnetic sensor sub-layers
#31Magnetic sensor with enhanced magnetoresistance ratio
#32Magnetoresistance Device
#33Magnetoresistance Device
#34COATING FORMULATION AND APPLICATION OF ORGANIC PASSIVATION LAYER ONTO IRON-BASED RARE EARTH POWDERS
#35CoFe/Ni Multilayer film with perpendicular anisotropy for microwave assisted magnetic recording
#36CoFe/Ni multilayer film with perpendicular anisotropy for microwave assisted magnetic recording
#37Magnetic memory cell construction
#38Magnetic sensor having a hard bias seed structure
#39Data reader with heusler alloy reference lamination
#40Magnetic element with dual magnetic moments
#41Magneto-resistive effect element having spacer layer containing gallium oxide, partially oxidized copper
#42Electrodeposition of FeCoNiV films with high resistivity and high saturation magnetization
#43Magneto-resistive effect element having spacer layer with thin central portion
#44Magneto-resistive effect element having spacer layer including gallium oxide layer with metal element
#45Magneto-resistive effect element having spacer layer including main spacer layer containing gallium oxide and metal intermediate layer
#46Magneto-resistive effect device, magnetic head assembly, and magnetic recording device
#47Magnetoresistive element having free and/or pinned layer magnetic compound expressed by M1M2O
#48Magneto-resistive effect element, magnetic head, magnetic head slider, head gimbal assembly and hard disk drive apparatus
#49Magneto-resistive effect element having spacer layer including main spacer layer containing gallium oxide and nonmagnetic layer
#50Current-perpendicular-to-the-plane (CPP) magnetoresistive (MR) sensor with improved seed layer structure for hard bias layer
#51Magnetic memory including memory cells incorporating data recording layer with perpendicular magnetic anisotropy film
#52Magneto-resistance effect element including diffusive electron scattering layer, magneto-resistance effect head, magnetic storage and magnetic memory
#53Fabrication of a coercivity hard bias using FePt containing film
#54Magnetic tunnel junction having a magnetic insertion layer and methods of producing the same
#55Assisting FGL oscillations with perpendicular anisotropy for MAMR
#56Magnetoresistive element and magnetic memory
#57Magneto-resistance element and semiconductor memory device including the same
#58Magnetic element having perpendicular anisotropy with enhanced efficiency
#59Magnetic sensor stack body, method of forming the same, film formation control program, and recording medium
#60Method of forming a spin-transfer torque random access memory (STT-RAM) device
#61Spin injection source and manufacturing method thereof
#62Low switching current dual spin filter (DSF) element for STT-RAM and a method for making the same
#63Magneto-resistance effect element
#64Magnetoresistance effect element with a layer containing an oxide as a principal component and containing a magnetic transition metal element which does not bond to oxygen
#65CoFe/Ni Multilayer film with perpendicular anistropy for microwave assisted magnetic recording
#66MR enhancing layer (MREL) for spintronic devices
#67CURRENT-PERPENDICULAR-TO-PLANE (CPP) READ SENSOR WITH Co-Fe BUFFER LAYERS
#68CURRENT PERPENDICULAR TO THE PLANE READER WITH IMPROVED GIANT MAGNETO-RESISTANCE
#69Magnetic memory cell construction
#70Spin-torque based memory device using a magnesium oxide tunnel barrier
#71Self-pinned spin valve magnetoresistance effect film and magnetic sensor using the same, and rotation angle detection device
#72Method and system for providing a magnetic transducer having an improved read sensor synthetic antiferromagnet
#73MRAM cells including coupled free ferromagnetic layers for stabilization
#74Multiple CCP layers in magnetic read head devices
#75Magnetic memory cell construction
#76Magnetic element having perpendicular anisotropy with enhanced efficiency
#77Fabrication of magnetoresistive sensors and electronic lapping guides
#78Magneto-resistance effect element having a diffusive electron scattering layer, magneto-resistance effect head, magnetic storage and magnetic memory
#79Oscillators using magnetic domain wall and methods of operating the same
#80CCP-CPP magnetoresistive reader with high GMR value
#81Magnetic sensing device including a sense enhancing layer
#82Corrosion resistant coating for copper substrate
#83Magneto-resistance effect element including a damping factor adjustment layer, magneto-resistance effect head, magnetic storage and magnetic memory
#84Layered structure having FePt system magnetic layer and magnetoresistive effect element using the same
#85Magnetoresistive magnetic head having a cpp element using a heusler alloy layer and a high saturation magnetization layer
#86Self-aligned coil process in magnetic recording heads
#87TUNNEL MAGNETORESISTIVE THIN FILM AND MAGNETIC MULTILAYER FILM FORMATION APPARATUS
#88Current-perpendicular-to-plane (CPP) read sensor with ferromagnetic amorphous buffer and polycrystalline seed layers
#89MRAM cells including coupled free ferromagnetic layers for stabilization
#90TMR device with novel free layer structure
#91Coating formulation and application of organic passivation layer onto iron-based rare earth powders
#92IRON NITRIDE MAGNETIC POWDER AND MAGNETIC RECORDING MEDIUM COMPRISING THE SAME
#93Magnetic memory cell construction
#94High performance magnetic tunnel barriers with amorphous materials
#95Magnetic sensor including a free magnetization layer and a fixed magnetization layer on a nonmagnetic conductor
#96Magnetic head assembly
#97Read sensors and methods of making same with back-edge milling and refilling
#98Current perpendicular to plane magnetoresistive sensor employing half metal alloys for improved sensor performance
#99Thin seeded Co/Ni multilayer film with perpendicular anisotropy for spintronic device applications
#100Low switching current dual spin filter (DSF) element for STT-RAM and a method for making the same
#101Tunnel barrier sensor with multilayer structure
#102Magnetic tunnel junction device
#103Spin-torque oscillator, magnetic head including the spin-torque oscillator, and magnetic recording and reproducing apparatus
#104Exchange coupled film including hafnium and amorphous layers usable in a magnetoresistive element in a thin-film magnetic head
#105Galvanomagnetic device and magnetic sensor
#106Protecting hard bias magnets during a CMP process using a sacrificial layer
#107Magneto-resistive effect element, magnetic head, and magnetic recording/reading apparatus
#108Magnetoresistive effect element and manufacturing method thereof
#109Tunnel junction magnetoresistive sensor having a near zero magnetostriction free layer
#110Three-dimensional magnetic memory with multi-layer data storage layers
#111Magnetoresistance effect element, magnetic head, magnetic reproducing apparatus, and magnetic memory
#112Magnetoresistive element
#113Magneto-resistive element for a magneto-resistive device and method of manufacturing thereof
#114Magnetoresistance effect element with a layer containing an oxide as a principal component and containing a magnetic transition metal element which does not bond to oxygen
#115Magneto-resistance effect element
#116Magnetic recording element
#117MAGNETORESISTANCE EFFECT ELEMENT AND MAGNETORESISTIVE DEVICE
#118Thin-film magnetic head comprising a magneto-resistive effect device of the CPP structure including a re-magnetizing bias layer and magnetic disk system
#119Enhanced anti-parallel-pinned sensor using thin ruthenium spacer and high magnetic field annealing
#120Method of making thin film magnetic head using electric lapping guide
#121Thin film device with lead conductor film of increased surface area
#122Chemically disordered material used to form a free layer or a pinned layer of a magnetoresistance (MR) read element
#123Thin film device having lead conductor film
#124Process for composite free layer in CPP GMR or TMR device
#125Tunneling magnetoresistive (TMR) sensor with a Co-Fe-B free layer having a negative saturation magnetostriction
#126Apparatus With Increased Magnetic Anisotropy And Related Method
#127Radio-frequency oscillator with spin-polarised current
#128Magnetoresistive Multilayer Film
#129Magneto-resistance effect element having diffusion blocking layer and thin-film magnetic head
#130Magnetoresistance effect device and method of production thereof
#131Magnetoresistance effect device and method for manufacturing same, magnetic memory, magnetic head, and magnetic recording apparatus
#132Magnetoresistive element having free layer magnetic compound expressed by M1M2O
#133Uniformity in CCP magnetic read head devices
#134Magnetic tunnel barriers and associated magnetic tunnel junctions with high tunneling magnetoresistance
#135Magnetic head using a synthetic ferri free structure
#136Magnetic tunnel junctions using amorphous materials as reference and free layers
#137Magnetic head and method of producing the same
#138COATING FORMULATION AND APPLICATION OF ORGANIC PASSIVATION LAYER ONTO IRON-BASED RARE EARTH POWDERS
#139Magnetoresistive element
#140Magnetoresistive element, magnetic head, and magnetic recording apparatus
#141Superparamagnetic platelets field sensing devices
#142Magnetoresistive reproducing magnetic head and magnetic recording apparatus utilizing the head
#143Magnetic film for magnetic head
#144Magnetic film for magnetic head
#145Magneto-resistive magnetic read head and storage apparatus using the same magnetic read head
#146Method for manufacturing a magneto-resistance effect element having spacer layer
#147MAGNETORESISTANCE EFFECT ELEMENT, MAGNETIC HEAD, MAGNETIC REPRODUCING APPARATUS, AND MAGNETIC MEMORY
#148Magnetic tunnel barriers and associated magnetic tunnel junctions with high tunneling magnetoresistance
#149Magnetoresistance effect element, magnetic head, magnetic reproducing apparatus, and magnetic memory
#150Method and apparatus for providing a magnetic read sensor having a thin pinning layer and improved magnetoreistive coefficient
#151MAGNETIC SENSOR WITH LIMITED ELEMENT WIDTH
#152Thin-film magnetic device with strong spin polarization perpendicular to the plane of the layers, magnetic tunnel junction and spin valve using such a device
#153Method for manufacturing a magneto-resistance effect element
#154Magnetoresistive element and magnetic memory device
#155Method for manufacturing magnetic field detecting element, utilizing diffusion of metal
#156Multilayered film having crystal grains grown at an inclination to a substrate, and magnetoresistive head using the film
#157MAGNETORESISTANCE EFFECT ELEMENT, MAGNETIC HEAD, AND MAGNETIC REPRODUCING APPARATUS
#158Spin-torque devices
#159Magnetic memory cell and random access memory
#160Methods and apparatus for a synthetic anti-ferromagnet structure with reduced temperature dependence
#161Seed layer for fabricating spin valve heads for ultra-high density recordings
#162Seed layer for fabricating spin valve heads for ultra-high density recordings
#163Magneto-resistance effect element and thin-film magnetic head
#164Magnetoresistive device, magnetoresistive head and magnetic recording-reproducing apparatus
#165Magnetic sensing device including a sense enhancing layer
#166Magnetoresistance effect element, magnetic head, magnetic reproducing apparatus, and magnetic memory
#167Magnetic sensing element including free magnetic layer or pinned magnetic layer having two sublayers that are composed of different CoMn-based heusler alloys
#168Magnetoresistive spin valve sensor with tri-layer free layer
#169Multilayer force sensor and method for determining a force
#170Force sensor array having magnetostrictive magnetoresistive sensors and method for determining a force
#171Method of forming a magnetic random access memory element
#172Current perpendicular to plane magnetoresistive sensor pre-product with current confining path precursor
#173Magnetoresistance element with improved magentoresistance change amount and with free layer having improved soft magnetic characteristics
#174Spin injection magnetic domain wall displacement device and element thereof
#175Magnetic sensing element including free layer having gradient composition and method for manufacturing the same
#176Enhanced anti-parallel-pinned sensor using thin ruthenium spacer and high magnetic field annealing
#177Magnetoresistive element and magnetic memory device
#178Superparamagnetic field sensing device
#179Structure and process for composite free layer in CPP GMR device
#180Magnetic tunnel junctions using amorphous materials as reference and free layers
#181Magnetoresistive element
#182Magnetoresistance effect device and a preform therefor
#183Self-aligned coil process in magnetic recording heads
#184Method of manufacturing a magnetoresistive sensor with a thin antiferromagnetic layer for pinning antiparallel coupled tabs
#185Spin-injection device and magnetic device using spin-injection device
#186High performance magnetic tunnel barriers with amorphous materials
#187Magnetoresistive spin-valve sensor and magnetic storage apparatus
#188Electrodeposition of FeCoNiV films with high resistivity and high saturation magnetization for magnetic head fabrication
#189High Hc pinned self-pinned sensor
#190Synthetic antiferromagnet structures for use in MTJs in MRAM technology
#191CPP GMR with hard magnet in stack bias layer
#192Process of manufacturing a side pinned magnetic recording sensor
#193CPP GMR and magnetostriction improvement by laminating CoFe free layer with thin FeColayers
#194Magnetoresistive element and magnetic memory device
#195Bismuth glass composition, and magnetic head and plasma display panel including the same as sealing member
#196Magnetoresistance effect element, magnetic head, and magnetic storage system using a giant magnetoresistance effect element
#197Coating formulation and application of organic passivation layer onto iron-based rare earth powders
#198Magnetoresistive device, magnetoresistive head and magnetic recording-reproducing apparatus
#199Epitaxial oxide cap layers for enhancing GMR performance
#200Synthetic antiferromagnet structures for use in MTJs in MRAM technology
#201Method of making a current-perpendicular to the plane (CPP) magnetoresistive (MR) sensor
#202Magnetoresistance effect element
#203Magnetic recording medium and magnetic recording apparatus
#204Magnetoresistive multilayer film
#205Magnetoresistance effect element
#206Thin-film magnetic head and method of forming the same
#207Method of forming a thin film magnetic head
#208Magnetoresistance effect element, magnetic head, magnetic head assembly, magnetic storage system
#209Magnetic anisotropy adjusted laminated magnetic thin films for magnetic recording
#210Spin-valve magnetoresistive element having fixed magnetic layer of epitaxal laminate including magnetic layer and nonmagnetic layer
#211Thin-film magnetic head, head gimbal assembly, and hard disk drive
#212Magneto-resistive device, and magnetic head, head suspension assembly and magnetic disk apparatus using magneto-resistive device
#213Magnetic film for magnetic head