251888 ⎘
Stock material or miscellaneous articles; Magnetic recording head; Magnetoresistive; Multilayer Super lattice [e.g., giant magneto resistance [GMR] or colossal magneto resistance [CMR], etc.]
Multi-layer magnetoelectronic device
#2CoFe/Ni multilayer film with perpendicular anisotropy for microwave assisted magnetic recording
#3CoFe/Ni multilayer film with perpendicular anisotropy for microwave assisted magnetic recording
#4Three-dimensional magnetic memory with multi-layer data storage layers
#5Method of producing a multi-layer magnetoelectronic device and magnetoelectronic device
#6Current-perpendicular-to-the-plane (CPP) magnetoresistive sensor with multilayer reference layer including a crystalline CoFeX layer and a Heusler alloy layer
#7Current-perpendicular-to-plane magnetoresistive read sensor with grooved contact and free layers
#8MR enhancing layer (MREL) for spintronic devices
#9Magnetic devices having shields including a nickel alloy
#10CoFe-based heusler alloy and spintronics devices using the same
#11CoFe/Ni Multilayer film with perpendicular anisotropy for microwave assisted magnetic recording
#12CoFe/Ni multilayer film with perpendicular anisotropy for microwave assisted magnetic recording
#13Data reader with heusler alloy reference lamination
#14Current-perpendicular-to-plane (CPP) read sensor with dual seed and cap layers
#15Storage element and memory device
#16Assisting FGL oscillations with perpendicular anisotropy for MAMR
#17Method of forming a spin-transfer torque random access memory (STT-RAM) device
#18Method of manufacturing magnetoresistive element
#19Low switching current dual spin filter (DSF) element for STT-RAM and a method for making the same
#20Magneto-resistance effect element
#21CoFe/Ni Multilayer film with perpendicular anistropy for microwave assisted magnetic recording
#22MR enhancing layer (MREL) for spintronic devices
#23CURRENT PERPENDICULAR TO THE PLANE READER WITH IMPROVED GIANT MAGNETO-RESISTANCE
#24CPP structure with enhanced GMR ratio
#25Method of manufacturing a CPP structure with enhanced GMR ratio
#26Self-pinned spin valve magnetoresistance effect film and magnetic sensor using the same, and rotation angle detection device
#27Electrodeposition of hard to deposit materials on aluminum and other substrates using improved water saving mercy cell
#28Magnetoresistive element and thin-film magnetic head
#29Thin seeded Co/Ni multilayer film with perpendicular anisotropy for spintronic device applications
#30Low switching current dual spin filter (DSF) element for STT-RAM and a method for making the same
#31Magnetic artificial superlattice and method for producing the same
#32Galvanomagnetic device and magnetic sensor
#33CURRENT-PERPENDICULAR-TO-PLANE READ SENSOR WITH AMORPHOUS FERROMAGNETIC AND POLYCRYSTALLINE NONMAGNETIC SEED LAYERS
#34Three-dimensional magnetic memory with multi-layer data storage layers
#35Magneto-resistance effect element
#36CPP-TYPE MAGNETORESISTANCE EFFECT ELEMENT HAVING CHARACTERISTIC FREE LAYERS
#37Process for composite free layer in CPP GMR or TMR device
#38Free layer for CPP GMR enhancement
#39Method for manufacturing a magneto-resistance effect element
#40Methods and apparatus for a synthetic anti-ferromagnet structure with reduced temperature dependence
#41Magnetoresistive device, magnetoresistive head and magnetic recording-reproducing apparatus
#42Method of manufacturing a CPP structure with enhanced GMR ratio
#43Structure and process for composite free layer in CPP GMR device
#44Magnetic detecting element having antiferromagnetic film having predetermined space in track width direction and method for manufacturing the same
#45Free layer design for CPP GMR enhancement
#46Magnetoresistive device, magnetoresistive head and magnetic recording-reproducing apparatus
#47Exchange coupled film having improved current-carrying reliability and improved rate of change in resistance and magnetic sensing element using same