Inventor profile of:

Chul Lee

City:

Seoul

Country:

South Korea

Published Applications:

38

Last publication date:

2017-07-27

Top Assignees for applications by Chul Lee

The entities that hold a legal rights for patent applications filed by inventor Lee Chul:

Recent patent applications by Lee Chul

Chul Lee from Seoul, KR has applied for patents for these inventions. The list has both pending applications and granted patents:

#1 | 2017-07-27
US20170213277A1
Physics

GOODS PURCHASE APPARATUS AND GOODS PURCHASE SYSTEM HAVING THE SAME

#2 | 2015-12-24
US20150371685A1
Physics

Methods of forming semiconductor devices to include single body interconnection patterns using fine patterning techniques, and semiconductor device so formed

#3 | 2015-11-26
US20150340459A1
Electricity

METHOD OF FORMING PATTERNS OF SEMICONDUCTOR DEVICE

#4 | 2015-04-16
US20150103163A1
Physics

Apparatus, method, and processor for measuring change in distance between a camera and an object

#5 | 2014-12-25
US20140376203A1
Electricity

Display apparatus

#6 | 2012-11-01
US20120273791A1
Electricity

METHOD OF FORMING SEMICONDUCTOR DEVICES WITH BURIED GATE ELECTRODES AND DEVICES FORMED BY THE SAME

#7 | 2012-06-07
US20120139021A1
Electricity

SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME

#8 | 2012-01-26
US20120017517A1
Fixed constructions

Electrical door-locking device

#9 | 2011-09-01
US20110210421A1
Electricity

Trench-type capacitor, semiconductor device having the same, and semiconductor module having the semiconductor device

#10 | 2011-07-14
US20110171800A1
Electricity

METHOD OF FORMING SEMICONDUCTOR DEVICES WITH BURIED GATE ELECTRODES AND DEVICES FORMED BY THE SAME

#11 | 2011-04-28
US20110095350A1
Electricity

Vertical type integrated circuit devices and memory devices including conductive lines supported by Mesa structures and methods of fabricating the same

#12 | 2009-07-30
US20090189217A1
Electricity

Semiconductor memory devices including a vertical channel transistor having a buried bit line

#13 | 2009-07-23
US20090186471A1
Electricity

Method of fabricating semiconductor device for reducing thermal burden on impurity regions of peripheral circuit region

#14 | 2009-07-02
US20090170271A1
Electricity

Transistor and method of forming the same

#15 | 2008-12-25
US20080315282A1
Electricity

Semiconductor Devices Including Transistors Having Three Dimensional Channels

#16 | 2008-12-11
US20080303085A1
Electricity

Semiconductor device including active pattern with channel recess, and method of fabricating the same

#17 | 2008-11-27
US20080293203A1
Electricity

Semiconductor device having a fin structure and method of manufacturing the same

#18 | 2008-08-07
US20080185641A1
Electricity

Recessed transistor and method of manufacturing the same

#19 | 2008-04-10
US20080084731A1
Physics

DRAM devices including fin transistors and methods of operating the DRAM devices

#20 | 2007-12-27
US20070298599A1
Electricity

Method for fabricating multiple FETs of different types

#21 | 2007-08-16
US20070190725A1
Electricity

Methods of Manufacturing Semiconductor devices Having Buried Bit Lines

#22 | 2007-08-09
US20070184627A1
Electricity

Semiconductor devices including transistors having three dimensional channels and methods of fabricating the same

#23 | 2007-06-21
US20070138599A1
Electricity

SEMICONDUCTOR DEVICE HAVING A SINGLE SIDEWALL FIN FIELD EFFECT TRANSISTOR AND METHOD FOR FABRICATING THE SAME

#24 | 2007-06-14
US20070134884A1
Electricity

Isolation method of defining active fins, method of fabricating semiconductor device using the same and semiconductor device fabricated thereby

#25 | 2007-02-22
US20070042582A1
Electricity

Method of forming a nanowire and method of manufacturing a semiconductor device using the same

#26 | 2006-09-28
US20060215472A1
Physics

Memory device having shared open bit line sense amplifier architecture

#27 | 2006-06-22
US20060131613A1
Electricity

Semiconductor devices having buried bit lines and methods of manufacturing semiconductor devices having buried bit lines

#28 | 2006-05-11
US20060097304A1
Electricity

Methods of manufacturing semiconductor memory devices including a vertical channel transistor

#29 | 2006-02-02
US20060022262A1
Electricity

Semiconductor device having a fin structure and method of manufacturing the same

#30 | 2006-01-26
US20060017104A1
Electricity

Semiconductor device having a channel pattern and method of manufacturing the same

#31 | 2005-12-08
US20050269629A1
Electricity

Methods of fabricating fin field transistors

#32 | 2005-11-10
US20050250285A1
Electricity

Fin field effect transistor device and method of fabricating the same

#33 | 2005-09-08
US20050194616A1
Electricity

Transistor and method of forming the same

#34 | 2005-08-25
US20050186746A1
Electricity

Method of manufacturing a fin field effect transistor

#35 | 2005-08-25
US20050184348A1
Electricity

Semiconductor device gate structure and method of forming the same

#36 | 2005-08-11
US20050176186A1
Electricity

Field effect transistor and method for manufacturing the same

#37 | 2005-08-11
US20050173768A1
Electricity

Fin FET structure

#38 | 2005-08-04
US20050170593A1
Electricity

Method for forming a FinFET by a damascene process

InventorID:

1013111 ⎘