Muenchen
Germany
18
2023-12-07
The entities that hold a legal rights for patent applications filed by inventor Voss Stephan:
Stephan Voss from Muenchen, DE has applied for patents for these inventions. The list has both pending applications and granted patents:
Methods for Forming a Semiconductor Device Having a Second Semiconductor Layer on a First Semiconductor Layer
#2 | 2022-12-01Semiconductor Device with Improved Performance in Operation and Improved Flexibility in the Arrangement of Power Chips
#3 | 2022-06-23SEMICONDUCTOR DEVICE PROTECTION
#4 | 2022-02-03Methods for forming a semiconductor device
#5 | 2018-06-07Bipolar transistor with superjunction structure
#6 | 2017-05-04Semiconductor device
#7 | 2017-05-04Insulated gate semiconductor device with soft switching behavior
#8 | 2017-04-27Bipolar transistor with superjunction structure
#9 | 2017-01-26Semiconductor device with a reduced band gap zone
#10 | 2016-10-06Semiconductor device with channelstopper and method for producing the same
#11 | 2016-04-21Insulated gate bipolar transistor comprising negative temperature coefficient thermistor
#12 | 2015-08-13Transistor device with integrated gate-resistor
#13 | 2015-02-12Edge termination structure with trench isolation regions
#14 | 2015-01-29Semiconductor device
#15 | 2015-01-29Power MOS transistor with integrated gate-resistor
#16 | 2011-08-25Semiconductor device with a field stop zone and process of producing the same
#17 | 2010-06-24Semiconductor device with staggered oxide-filled trenches at edge region
#18 | 2008-03-06Semiconductor device with a field stop zone and process of producing the same
1048598 ⎘