Wernberg-Wudmath
Austria
27
2021-09-16
The entities that hold a legal rights for patent applications filed by inventor Schmidt Gerhard:
Gerhard Schmidt from Wernberg-Wudmath, AT has applied for patents for these inventions. The list has both pending applications and granted patents:
Semiconductor device with first and second portions that include silicon and nitrogen
#2 | 2021-08-26Semiconductor device having semiconductor device elements in a semiconductor layer
#3 | 2020-10-22Semiconductor Device with an Edge Termination Structure
#4 | 2020-03-12Semiconductor device with a portion including silicon and nitrogen and method of manufacturing
#5 | 2019-11-14Semiconductor device and manufacturing method
#6 | 2019-10-31Semiconductor Device and Manufacturing
#7 | 2019-01-31Method for manufacturing a power semiconductor device having a reduced oxygen concentration
#8 | 2017-08-24Semiconductor devices and methods for forming a semiconductor device
#9 | 2017-06-08Semiconductor device with trench edge termination
#10 | 2016-06-23Method for forming a semiconductor device and a semiconductor substrate
#11 | 2016-02-18Adjusting the charge carrier lifetime in a bipolar semiconductor device
#12 | 2015-12-08Adjusting the charge carrier lifetime in a bipolar semiconductor device
#13 | 2015-07-09Semiconductor device with vertically inhomogeneous heavy metal doping profile
#14 | 2015-02-26Semiconductor device with a passivation layer
#15 | 2014-03-06Semiconductor device with a passivation layer
#16 | 2013-12-19SEMICONDUCTOR DEVICE HAVING VARIABLY LATERALLY DOPED ZONE WITH DECREASING CONCENTRATION FORMED IN THE TERMINATION REGION
#17 | 2013-09-05Method of producing a vertically inhomogeneous platinum or gold distribution in a semiconductor substrate and in a semiconductor device
#18 | 2013-02-28Semiconductor device with an amorphous semi-insulating layer, temperature sensor, and method of manufacturing a semiconductor device
#19 | 2012-03-01Integrated circuit having an edge passivation and oxidation resistant layer and method
#20 | 2010-03-04Semiconductor device and method for the production of a semiconductor device
#21 | 2010-02-25Semiconductor device having variably laterally doped zone with decreasing concentration formed in an edge region
#22 | 2009-01-08Semiconductor component including an edge termination having a trench and method for producing
#23 | 2008-12-04Method of producing a vertically inhomogeneous platinum or gold distribution in a semiconductor substrate and in a semiconductor device
#24 | 2007-09-27Integrated circuit having an edge passivation and oxidation resistant layer and method
#25 | 2007-03-29Power transistor
#26 | 2005-09-08Semiconductor component and micromechanical structure
#27 | 2005-07-21Semiconductor component having a pn junction and a passivation layer applied on a surface
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