Austin, Texas
United States
16
2017-02-09
The entities that hold a legal rights for patent applications filed by inventor Bowen Robert C.:
Robert C. Bowen from Austin, US has applied for patents for these inventions. The list has both pending applications and granted patents:
Structure and method to achieve large strain in NS without addition of stack-generated defects
#2 | 2016-10-20Multi-layer fin field effect transistor devices and methods of forming the same
#3 | 2016-06-09Semiconductor devices with structures for suppression of parasitic bipolar effect in stacked nanosheet FETs and methods of fabricating the same
#4 | 2016-04-21Strained stacked nanosheet FETS and/or quantum well stacked nanosheet
#5 | 2016-04-21Strained stacked nanosheet FETs and/or quantum well stacked nanosheet
#6 | 2016-03-10Confined semi-metal field effect transistor
#7 | 2016-03-10RECTANGULAR NANOSHEET FABRICATION
#8 | 2016-02-04Low resistivity damascene interconnect
#9 | 2016-01-21Thermionically-overdriven tunnel FETs and methods of fabricating the same
#10 | 2015-12-17Integrated circuits with Si and non-Si nanosheet FET co-integration with low band-to-band tunneling and methods of fabricating the same
#11 | 2015-10-15Crystalline multiple-nanosheet strained channel FETs and methods of fabricating the same
#12 | 2015-08-27Integrated circuit devices including FinFETs and methods of forming the same
#13 | 2015-05-28FinFET semiconductor devices including recessed source-drain regions on a bottom semiconductor layer and methods of fabricating the same
#14 | 2015-05-07Quantum interference based logic devices including electron monochromator
#15 | 2015-05-07Integrated circuit devices including strained channel regions and methods of forming the same
#16 | 2015-04-02Integrated circuit devices including FinFETS and methods of forming the same
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