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Inventor profile of:

Hiroyuki Ode

City:

Hiroshima

Country:

Japan

Published Applications:

9

Last publication date:

2013-02-28

Top Assignees for applications by Hiroyuki Ode

The entities that hold a legal rights for patent applications filed by inventor Ode Hiroyuki:

  • Elpida Memory, Inc. 9 Tokyo, Japan
  • INTERMOLECULAR, INC. 9 San Jose, CA United States

Recent patent applications by Ode Hiroyuki

Hiroyuki Ode from Hiroshima, JP has applied for patents for these inventions. The list has both pending applications and granted patents:

#1 | 2013-02-28
US20130052791A1
Electricity

Doped electrode for dram applications

#2 | 2013-02-28
US20130052790A1
Electricity

DOPING APPROACH OF TITANIUM DIOXIDE FOR DRAM CAPACITORS

#3 | 2012-12-27
US20120329235A1
Electricity

Wet etch and clean chemistries for MoO

#4 | 2012-12-20
US20120322221A1
Electricity

Molybdenum oxide top electrode for DRAM capacitors

#5 | 2012-12-20
US20120322220A1
Electricity

Method of processing MIM capacitors to reduce leakage current

#6 | 2012-12-06
US20120309162A1
Electricity

Method of using a catalytic layer to enhance formation of a capacitor stack

#7 | 2012-12-06
US20120309160A1
Electricity

Method for fabricating a DRAM capacitor

#8 | 2012-11-15
US20120287553A1
Electricity

Method for fabricating a DRAM capacitor having increased thermal and chemical stability

#9 | 2012-10-18
US20120262835A1
Electricity

Method for fabricating a DRAM capacitor

InventorID:

115049 ⎘

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