INTERMOLECULAR, INC.

Thin film deposition in a high aspect ratio feature

Current compliance layers and memory arrays comprising thereof

Current compliance layers and memory arrays comprising thereof

Vapor based site-isolated processing systems and methods

Current selectors formed using single stack structures

Systems, methods, and apparatus for production coatings of low-emissivity glass including a ternary alloy

Low temperature deposition of low loss dielectric layers in superconducting circuits

Solid-state batteries utilizing template layers for electrode formation and methods for forming the same

Variable composition transparent conductive oxide layer and methods of forming thereof

Method for forming a doped metal oxide for use in resistive switching memory elements

Doped ternary nitride embedded resistors for resistive random access memory cells

Two stage forming of resistive random access memory cells

Diamond like carbon (DLC) as a thermal sink in a selector stack for non-volatile memory application

Photo-induced MSM stack

Superconducting junctions

SiC—Si3N4 nanolaminates as a semiconductor for MSM snapback selector devices

Low-E panels and methods for forming the same

Doped electrode for DRAM capacitor stack

Transparent resistive random access memory cells

Conductive barriers for ternary nitride thin-film resistors

Molecular self-assembly in substrate processing

Atomic layer deposition of HfAlC as a metal gate workfunction material in MOS devices

ReRAM cells with diffusion-resistant metal silicon oxide layers

Shaping ReRAM conductive filaments by controlling grain-boundary density

Tunneling barrier creation in MSM stack as a selector device for non-volatile memory application

Electron barrier height controlled interfaces of resistive switching layers in resistive random access memory cells

Low-temperature deposition of nitrides by UV-assisted ALD or CVD

Switching conditions for resistive random access memory cells

Oxides with thin metallic layers as transparent ohmic contacts for p-type and n-type gallium nitride

Doped narrow band gap nitrides for embedded resistors of resistive random access memory cells

Solution based etching of titanium carbide and titanium nitride structures

Low-e panels and methods for forming the same

Method to etch cu/Ta/TaN selectively using dilute aqueous Hf/hCl solution

Seed layer for low-e applications

Combinatorial screening of metallic diffusion barriers

Silver based conductive layer for flexible electronics

Embedded nonvolatile memory elements having resistive switching characteristics

Capping thin-film resistors to control interface oxidation

Amorphous silicon doped with fluorine for selectors of resistive random access memory cells

Superconducting circuits with reduced microwave absorption

Zinc stannate ohmic contacts for p-type gallium nitride

Resistive random access memory cells having shared electrodes with transistor devices

Multi-level memory array having resistive elements for multi-bit data storage

Methods for fabricating integrated circuits including fluorine incorporation

Method to grow in-situ crystalline IGZO using co-sputtering targets

Methods of forming embedded resistors for resistive random access memory cells

Non-volatile resistive-switching memories

Method to etch Cu/Ta/TaN selectively using dilute aqueous HF/HCI solution

Creating an embedded ReRAM memory from a high-k metal gate transistor structure

Low-e panels with ternary metal oxide dielectric layer and method for forming the same

Low-E glazing performance by seed structure optimization

Methods to improve electrical performance of ZrO2 based high-K dielectric materials for DRAM applications

Methods for etching copper during the fabrication of integrated circuits

Transition metal oxide bilayers

Low-e panels and methods for forming the same

Voltage controlling assemblies including variable resistance devices

Diffusion barrier layer for resistive random access memory cells

Methods, systems, and apparatus for improving thin film resistor reliability

Stacked bi-layer as the low power switchable RRAM

Embedded resistors for resistive random access memory cells

Zinc blende cadmium—manganese—telluride with reduced hole compensation effects and methods for forming the same

Capacitors including inner and outer electrodes

Wet etching of silicon containing antireflective coatings

X-ray fluorescence analysis of thin-film coverage defects

Hydrogenated amorphous silicon dielectric for superconducting devices

Ternary metal nitride formation by annealing constituent layers

Metal organic chemical vapor deposition of embedded resistors for ReRAM cells

Atomic layer deposition of metal oxides for memory applications

TiOx based selector element

Plasma cleaning of superconducting layers

Atomic layer deposition of metal-oxide tunnel barriers using optimized oxidants

Catalytic growth of Josephson junction tunnel barrier

Fluorine passivation of dielectric for superconducting electronics

IGZO devices with reduced threshhold voltage shift and methods for forming the same

Methods to characterize an embedded interface of a CMOS gate stack