Inventor profile of:

Eric G. Stevens

City:

Webster, New York

Country:

United States

Published Applications:

32

Last publication date:

2018-02-15

Top Assignees for applications by Eric G. Stevens

The entities that hold a legal rights for patent applications filed by inventor Stevens Eric G.:

Recent patent applications by Stevens Eric G.

Eric G. Stevens from Webster, US has applied for patents for these inventions. The list has both pending applications and granted patents:

#1 | 2018-02-15
US20180048835A1
Electricity

Methods and apparatus for a CCD image sensor

#2 | 2017-08-31
US20170250217A1
Electricity

Method of forming a shallow pinned photodiode

#3 | 2016-10-06
US20160293660A1
Electricity

Method of forming a shallow pinned photodiode

#4 | 2015-06-25
US20150179701A1
Electricity

Image sensor with doped transfer gate

#5 | 2012-04-05
US20120083067A1
Electricity

METHOD FOR FORMING PHOTODETECTOR ISOLATION IN IMAGERS

#6 | 2012-04-05
US20120080733A1
Electricity

Photodetector isolation in image sensors

#7 | 2012-04-05
US20120080731A1
Electricity

PHOTODETECTOR ISOLATION IN IMAGE SENSORS

#8 | 2012-01-24
US12966238
-

Photodetector isolation in image sensors

#9 | 2011-06-30
US20110159635A1
Electricity

Method for forming deep isolation in imagers

#10 | 2011-06-30
US20110156112A1
Electricity

Image sensor with doped transfer gate

#11 | 2010-12-30
US20100327392A1
Electricity

Back-illuminated image sensors having both frontside and backside photodetectors

#12 | 2010-12-30
US20100327388A1
Electricity

Back-illuminated image sensors having both frontside and backside photodetectors

#13 | 2010-07-29
US20100188545A1
Electricity

PMOS PIXEL STRUCTURE WITH LOW CROSS TALK FOR ACTIVE PIXEL IMAGE SENSORS

#14 | 2010-06-17
US20100148230A1
Electricity

TRENCH ISOLATION REGIONS IN IMAGE SENSORS

#15 | 2010-06-10
US20100140729A1
Electricity

Method of forming lateral overflow drain and channel stop regions in image sensors

#16 | 2010-06-10
US20100140728A1
Electricity

Lateral overflow drain and channel stop regions in image sensors

#17 | 2010-06-10
US20100140668A1
Electricity

SHALLOW TRENCH ISOLATION REGIONS IN IMAGE SENSORS

#18 | 2010-05-13
US20100116971A1
Electricity

Back-illuminated CMOS image sensors

#19 | 2009-10-01
US20090243025A1
Electricity

PIXEL STRUCTURE WITH A PHOTODETECTOR HAVING AN EXTENDED DEPLETION DEPTH

#20 | 2009-02-05
US20090035888A1
Electricity

Two epitaxial layers to reduce crosstalk in an image sensor

#21 | 2008-06-12
US20080138926A1
Electricity

TWO EPITAXIAL LAYERS TO REDUCE CROSSTALK IN AN IMAGE SENSOR

#22 | 2008-03-06
US20080057617A1
Electricity

Method of thin lightshield process for solid-state image sensors

#23 | 2008-03-06
US20080057612A1
Electricity

METHOD FOR ADDING AN IMPLANT AT THE SHALLOW TRENCH ISOLATION CORNER IN A SEMICONDUCTOR SUBSTRATE

#24 | 2007-05-17
US20070108371A1
Electricity

PMOS pixel structure with low cross talk for active pixel image sensors

#25 | 2007-03-29
US20070069315A1
Electricity

Photodetector and n-layer structure for improved collection efficiency

#26 | 2007-03-29
US20070069260A1
Electricity

Photodetector structure for improved collection efficiency

#27 | 2006-03-02
US20060044432A1
Electricity

Fast flush structure for solid-state image sensors

#28 | 2006-02-23
US20060038203A1
Electricity

Methods to eliminate amplifier glowing artifact in digital images captured by an image sensor

#29 | 2005-11-03
US20050244998A1
Electricity

Thin lightshield process for solid-state image sensors

#30 | 2005-06-16
US20050127370A1
Electricity

Light shield process for solid-state image sensors

#31 | 2005-04-12
US10833386
-

Thin lightshield process for solid-state image sensors

#32 | 2005-02-17
US20050035422A1
Electricity

Method for forming light shield process for solid-state image sensor with multi-metallization layer

InventorID:

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