Inventor profile of:

Rwik Sengupta

City:

Austin, Texas

Country:

United States

Published Applications:

36

Last publication date:

2024-01-09

Top Assignees for applications by Rwik Sengupta

The entities that hold a legal rights for patent applications filed by inventor Sengupta Rwik:

Recent patent applications by Sengupta Rwik

Rwik Sengupta from Austin, US has applied for patents for these inventions. The list has both pending applications and granted patents:

#1 | 2024-01-09
US17541171
Physics

Context-aware circuit design layout construct

#2 | 2023-02-07
US17139876
Physics

Electronic design tracing and tamper detection using automatically generated layout patterns

#3 | 2023-01-05
US20230004789A1
Physics

Multi-bit, SoC-compatible neuromorphic weight cell using ferroelectric FETs

#4 | 2022-06-07
US17173440
Physics

System and method for device placement

#5 | 2022-02-10
US20220045167A1
Electricity

VFET standard cell architecture with improved contact and super via

#6 | 2021-04-22
US20210118950A1
Electricity

System and method for efficient enhancement of an on/off ratio of a bitcell based on 3T2R binary weight cell with spin orbit torque MJTs (SOT-MTJs)

#7 | 2020-09-17
US20200295134A1
Electricity

VFET standard cell architecture with improved contact and super via

#8 | 2020-09-03
US20200279811A1
Electricity

Apparatus and method of forming backside buried conductor in integrated circuit

#9 | 2020-09-03
US20200279605A1
Physics

Variation resistant 3T3R binary weight cell with low output current and high on/off ratio

#10 | 2020-09-03
US20200279176A1
Physics

4T4R ternary weight cell with high on/off ratio background

#11 | 2020-08-20
US20200265892A1
Physics

2T2R binary weight cell with high on/off ratio background

#12 | 2020-06-25
US20200201954A1
Physics

METHOD OF DESIGNING A LAYOUT FOR A SEMICONDUCTOR INTEGRATED CIRCUIT

#13 | 2020-05-14
US20200152801A1
Electricity

Nanosheet field effect transistor cell architecture

#14 | 2020-04-30
US20200135735A1
Electricity

Semiconductor device and method for making the same

#15 | 2019-10-17
US20190318998A1
Electricity

Method and system for providing a reverse engineering resistant hardware embedded security module

#16 | 2019-06-13
US20190181140A1
Electricity

Dielectric separation of partial GAA FETs

#17 | 2019-05-16
US20190148502A1
Electricity

Integrated circuit including field effect transistors having a contact on active gate compatible with a small cell area having a small contacted poly pitch

#18 | 2019-05-16
US20190148312A1
Electricity

Method and system for providing a reverse-engineering resistant hardware embedded security module

#19 | 2019-05-16
US20190148298A1
Electricity

Integrated circuit including field effect transistors having a contact on active gate compatible with a small cell area having a small contacted poly pitch

#20 | 2019-01-10
US20190012593A1
Physics

Multi-bit, SoC-compatible neuromorphic weight cell using ferroelectric FETs

#21 | 2018-09-20
US20180269152A1
Electricity

Power rail for standard cell block

#22 | 2018-09-06
US20180254350A1
Electricity

Unipolar complementary logic

#23 | 2017-10-19
US20170301672A1
Electricity

Sub 59 MV/decade SI CMOS compatible tunnel FET as footer transistor for power gating

#24 | 2017-09-19
US15276748
Electricity

Method for forming low parasitic capacitance source and drain contacts

#25 | 2017-05-25
US20170148922A1
Electricity

Stacked independently contacted field effect transistor having electrically separated first and second gates

#26 | 2017-04-20
US20170110595A1
Electricity

Gate-all-around field effect transistors with horizontal nanosheet conductive channel structures for MOL/inter-channel spacing and related cell architectures

#27 | 2017-04-06
US20170098661A1
Electricity

Semiconductor device including a repeater/buffer at higher metal routing layers and methods of manufacturing the same

#28 | 2017-02-14
US15158500
Electricity

Semiconductor device having buried power rail

#29 | 2016-05-12
US20160133513A1
Electricity

Metal oxysilicate diffusion barriers for damascene metallization with low RC delays and methods for forming the same

#30 | 2016-04-21
US20160111421A1
Electricity

MULTIPLE CPP FOR INCREASED SOURCE/DRAIN AREA FOR FETS INCLUDING IN A CRITICAL SPEED PATH

#31 | 2016-04-14
US20160104787A1
Electricity

Methods of forming semiconductor devices including conductive contacts on source/drains

#32 | 2016-03-10
US20160071848A1
Electricity

Semiconductor device with an isolation gate and method of forming

#33 | 2015-12-17
US20150364546A1
Electricity

Nanosheet FETs with stacked nanosheets having smaller horizontal spacing than vertical spacing for large effective width

#34 | 2015-12-17
US20150364542A1
Electricity

Integrated circuits with Si and non-Si nanosheet FET co-integration with low band-to-band tunneling and methods of fabricating the same

#35 | 2015-11-05
US20150318355A1
Electricity

Methods of forming defect-free SRB onto lattice-mismatched substrates and defect-free fins on insulators

#36 | 2015-07-09
US20150194427A1
Electricity

Semiconductor devices including finFETs and local interconnect layers and methods of fabricating the same

InventorID:

1222962 ⎘