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Inventor profile of:

Jae-Wan Park

City:

Daegu

Country:

South Korea

Published Applications:

24

Last publication date:

2023-05-11

Top Assignees for applications by Jae-Wan Park

The entities that hold a legal rights for patent applications filed by inventor Park Jae-Wan:

Soulbrain Co., Ltd. 11 Gyeonggi-do, South Korea
LS Cable & System Ltd. 2 Anyang-si, South Korea
SAMSUNG ELECTRONICS CO., LTD. 1 Suwon-si, South Korea
SOULBRAIN CO., LTD. 1 Seongnam-si, South Korea
Samsung Electronics Co., Ltd 1 , South Korea
Soulbrain Co., Ltd. 1 , South Korea

Recent patent applications by Park Jae-Wan

Jae-Wan Park from Daegu, KR has applied for patents for these inventions. The list has both pending applications and granted patents:

#1 | 2023-05-11

US20230141924A1

Chemistry; metallurgy

COMPOSITION FOR ETCHING AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE USING SAME

#2 | 2023-05-04

US20230136538A1

Chemistry; metallurgy

COMPOSITION FOR ETCHING AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE USING SAME

#3 | 2021-05-06

US20210130692A1

Chemistry; metallurgy

Composition for etching

#4 | 2021-05-06

US20210130691A1

Chemistry; metallurgy

Composition for etching

#5 | 2021-02-25

US20210054286A1

Chemistry; metallurgy

Composition for etching and method for manufacturing semiconductor device using same

#6 | 2021-02-25

US20210054285A1

Chemistry; metallurgy

Composition for etching and method for manufacturing semiconductor device using same

#7 | 2021-02-25

US20210054284A1

Chemistry; metallurgy

Composition for etching and method for manufacturing semiconductor device using same

#8 | 2021-02-25

US20210054283A1

Chemistry; metallurgy

Composition for etching and method for manufacturing semiconductor device using same

#9 | 2021-02-25

US20210054282A1

Chemistry; metallurgy

Composition for etching and method for manufacturing semiconductor device using same

#10 | 2021-02-25

US20210054281A1

Chemistry; metallurgy

Composition for etching and method for manufacturing semiconductor device using same

#11 | 2021-02-25

US20210054280A1

Chemistry; metallurgy

Composition for etching

#12 | 2021-02-25

US20210054279A1

Chemistry; metallurgy

Composition for etching

#13 | 2021-02-25

US20210054278A1

Chemistry; metallurgy

Composition for etching

#14 | 2021-02-25

US20210054277A1

Chemistry; metallurgy

Composition for etching

#15 | 2021-02-25

US20210054276A1

Chemistry; metallurgy

Composition for etching

#16 | 2021-02-18

US20210047564A1

Chemistry; metallurgy

COMPOSITION FOR ETCHING

#17 | 2020-08-20

US20200263087A1

Chemistry; metallurgy

Composition for etching and method for manufacturing semiconductor device using same

#18 | 2020-01-23

US20200024517A1

Chemistry; metallurgy

Composition for etching

#19 | 2018-06-28

US20180179442A1

Chemistry; metallurgy

Composition for etching

#20 | 2018-05-24

US20180142151A1

Chemistry; metallurgy

Etchant composition and method of fabricating integrated circuit device using the same

#21 | 2016-06-09

US20160163421A1

INSULATING WINDING WIRE HAVING CORONA RESISTANCE

#22 | 2016-01-21

US20160017224A1

Chemistry; metallurgy

Composition for etching

#23 | 2015-07-23

US20150206624A1

INSULATING WINDING WIRE HAVING CORONA RESISTANCE

#24 | 2015-07-16

US20150200112A1

Methods of forming conductive patterns and methods of manufacturing semiconductor devices using the same using an etchant composition that includes phosphoric acid, nitric acid, and an assistant oxidant

InventorID:

1228526 ⎘