Munich
Germany
20
2021-08-19
The entities that hold a legal rights for patent applications filed by inventor Pfaffenlehner Manfred:
Manfred Pfaffenlehner from Munich, DE has applied for patents for these inventions. The list has both pending applications and granted patents:
Semiconductor component with edge termination region
#2 | 2020-11-12Power Semiconductor Device and Method
#3 | 2020-08-20Power semiconductor device and method of processing a power semiconductor device
#4 | 2020-01-09Power semiconductor device
#5 | 2019-08-01Semiconductor component with edge termination region
#6 | 2019-05-23Method of manufacturing a semiconductor device having an undulated profile of net doping in a drift zone
#7 | 2018-04-26High voltage termination structure of a power semiconductor device
#8 | 2017-11-02Semiconductor device having an edge termination region comprising a first edge termination region of a second conductivity type adjacent to a second edge termination region of a first conductivity type
#9 | 2015-10-22Vertical semiconductor device
#10 | 2015-09-17Semiconductor component and integrated circuit
#11 | 2015-07-30Semiconductor device including undulated profile of net doping in a drift zone
#12 | 2015-07-23Semiconductor diode and method of manufacturing a semiconductor diode
#13 | 2015-03-19Semiconductor component having a passivation layer and production method
#14 | 2012-08-09Method of producing a semiconductor including two differently doped semiconductor zones
#15 | 2011-11-10Semiconductor device and fabrication method
#16 | 2010-04-01Robust semiconductor device with an emitter zone and a field stop zone
#17 | 2009-10-29Method for manufacturing a semiconductor substrate including laser annealing
#18 | 2009-07-23Semiconductor device and fabrication method
#19 | 2008-11-27Semiconductor element
#20 | 2007-05-31Power IGBT with increased robustness
1235751 ⎘