Milpitas, California
United States
44
2025-12-11
The entities that hold a legal rights for patent applications filed by inventor Lu Jiang:
Jiang Lu from Milpitas, US has applied for patents for these inventions. The list has both pending applications and granted patents:
METHOD OF BOTTOM REACTION EFFICIENCY MODULATION FOR ALD AND ALE
#2 | 2025-12-11TUNING DEPOSITION SELECTIVITY
#3 | 2025-12-11CYCLIC PLASMA AND THERMAL PROCESS TO IMPROVE PECVD TI SILICIDE DEPOSITION SELECTIVITY
#4 | 2025-12-04METHODS FOR FORMING LOW RESISTIVITY CONTACTS
#5 | 2025-12-04METHODS FOR FORMING LOW RESISTIVITY CONTACTS
#6 | 2025-12-04METHODS FOR FORMING LOW RESISTIVITY CONTACTS
#7 | 2025-05-29THERMAL CVD OF TITANIUM SILICIDE METHODS TO FORM SEMICONDUCTOR STRUCTURES
#8 | 2025-05-15Selective metal Capping with Metal Halide enhancement
#9 | 2025-04-17OLIGOMER FILM FOR BOTTOM-UP GAP FILL PROCESSES
#10 | 2025-04-03SURFACE TREATMENT ENABLING SUPER-CONFORMAL METAL CAP PROFILE ON MIDDLE OF-LINE (MOL) SILICIDES
#11 | 2025-03-06SELECTIVE CAPPING FOR GATE-ALL-AROUND FIELD EFFECT TRANSISTORS
#12 | 2025-02-13SELECTIVE BOTTOM-UP METAL FILL/CAP ON JUNCTION SILICIDE BY SELECTIVE METAL REMOVAL
#13 | 2025-02-13SELECTIVE METAL CAPPING PROCESSES FOR A JUNCTION SILICIDE
#14 | 2025-01-02BOTTOM-UP GAP FILL PROCESSES FOR SEMICONDUCTOR SUBSTRATES
#15 | 2024-11-14METHOD OF FORMING A MEOL CONTACT STRUCTURE
#16 | 2024-11-14METHODS FOR FORMING LOW RESISTIVITY CONTACTS
#17 | 2024-11-07SILICON NITRIDE DAMAGE-FREE DRY ETCH METHOD FOR TUNGSTEN REMOVAL IN MIDDLE OF LINE BOTTOM-UP TUNGSTEN INTEGRATION
#18 | 2024-10-31LOW-ENERGY UNDERLAYER FOR ROOM TEMPERATURE PHYSICAL VAPOR DEPOSITION OF ELECTRICALLY CONDUCTIVE FEATURES
#19 | 2024-06-13Method of Selective Metal Deposition Using Separated Reactant Activation and Plasma Discharging Zone
#20 | 2024-05-09PROCESS CHAMBER WITH PRESSURE CHARGING AND PULSING CAPABILITY
#21 | 2024-03-28Methods for Forming Low Resistivity Contacts
#22 | 2023-12-28TREATMENT OF TUNGSTEN SURFACE FOR TUNGSTEN GAP-FILL
#23 | 2023-11-30Selective metal removal with flowable polymer
#24 | 2023-11-23METHODS AND APPARATUS FOR PROCESSING A SUBSTRATE
#25 | 2023-10-26GRADIENT OXIDATION AND ETCH OF PVD MOLYBDENUM FOR BOTTOM UP GAP FILL
#26 | 2023-10-26METHOD OF IN-SITU SELECTIVE METAL REMOVAL VIA GRADIENT OXIDATION FOR GAPFILL
#27 | 2023-10-26GRADIENT OXIDATION AND ETCH FOR PVD METAL AS BOTTOM LINER IN BOTTOM UP GAP FILL
#28 | 2023-05-04Selective Passivation Of Damaged Nitride
#29 | 2020-01-16Apparatus for depositing metal films with plasma treatment
#30 | 2018-12-06Deposition of cobalt films with high deposition rate
#31 | 2018-11-29Cobalt Oxide Film Deposition
#32 | 2018-08-23Cobalt manganese vapor phase deposition
#33 | 2018-05-31Methods to fill high aspect ratio features on semiconductor substrates with MOCVD cobalt film
#34 | 2018-05-24Electromigration Improvement Using Tungsten For Selective Cobalt Deposition On Copper Surfaces
#35 | 2018-01-11Apparatus for depositing metal films with plasma treatment
#36 | 2017-10-26Gas feedthrough assembly
#37 | 2017-09-28Apparatus and methods to remove residual precursor inside gas lines post-deposition
#38 | 2016-05-12Methods for thermally forming a selective cobalt layer
#39 | 2015-09-10Cobalt deposition on barrier surfaces
#40 | 2015-07-09Methods of depositing cobalt manganese films
#41 | 2014-09-04Method for tuning a deposition rate during an atomic layer deposition process
#42 | 2013-01-24FABRICATION OF LIGHT EMITTING DIODES (LEDS) USING A DEGAS PROCESS
#43 | 2013-01-03FORMATION OF III-V MATERIALS USING MOCVD WITH CHLORINE CLEANS OPERATIONS
#44 | 2012-12-13ENHANCED MAGNESIUM INCORPORATION INTO GALLIUM NITRIDE FILMS THROUGH HIGH PRESSURE OR ALD-TYPE PROCESSING
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