Santa Clara, California
United States
13,059
2026-10-08
11,031
2026-10-06
Applied Materials, Inc. is a global leader in the semiconductor and display industries, based in Santa Clara, US. Founded in 1967, the company provides innovative equipment, services and software to enable the manufacture of advanced semiconductor, flat panel display and solar photovoltaic products. Applied Materials has a broad portfolio of products and services that address the full range of manufacturing needs from research and development to manufacturing and process control. The company has operations in more than 30 countries and serves customers in the electronics, energy, healthcare and industrial markets.
These are the the leading inventors for applications assigned to Applied Materials, Inc.:
Applied Materials, Inc. based in Santa Clara, US has been assigned the rights to these inventions. The list includes both Pending Applications and Patent Grants:
METHOD TO IMPROVE INTERCONNECT COEFFICIENT OF THERMAL EXPANSION
#2 | 2026-10-08IN SITU NUCLEATION OF DIAMOND FOR THERMAL CONDUCTIVE APPLICATIONS
#3 | 2026-10-08TITANIUM NITRIDE GAPFILL PROCESSES FOR SEMICONDUCTOR STRUCTURES
#4 | 2026-10-08CONTACT RESISTANCE REDUCTION FOR DIRECT BACKSIDE CONTACT
#5 | 2026-10-08PROCESSING SYSTEM FOR GENERATING ION BEAMS HAVING TUNABLE ANGLE
#6 | 2026-10-08ABATEMENT OF EFFLUENT CONTAINING AMMONIUM CHLORIDE
#7 | 2026-10-01SILICON-ON-INSULATOR (SOI) REPLACEMENT FOR 4F2 DRAM USING SACRIFICIAL SILICON GERMANIUM AND BOTTOM-UP DIELECTRIC
#8 | 2026-10-01MULTI-ZONE HEATER WITH MINIMUM RF LOSS
#9 | 2026-10-01APPARATUS AND METHOD OF FORMING A COLLOID CONTAINING LAYER
#10 | 2026-09-24SCALABLE AND DYNAMIC MULTI-MODAL CHIP DESIGN HOTSPOT CLASSIFICATION
#11 | 2026-09-24SYSTEMS AND METHODS FOR RINSING ELECTROPLATING ROTORS
#12 | 2026-09-17MODULAR COAXIAL BRIDGE
#13 | 2026-09-17RUTHENIUM SEEDING FOR CORROSION FREE MOLYBDENUM GROWTH
#14 | 2026-09-17METHODS OF MANUFACTURING SEMICONDUCTOR DEVICES
#15 | 2026-09-17EPITAXIAL LAYER DEPOSITION FOR SEMICONDUCTOR DEVICES
#16 | 2026-09-17METHOD OF REDUCING METAL GATE RESISTANCE FOR NEXT GENERATION NMOS DEVICE APPLICATION
#17 | 2026-09-17ROTATED 3D DRAM CELL
#18 | 2026-09-10IN-TRENCH QUALITY IMPROVEMENT OF SILICON-AND-OXYGEN-CONTAINING MATERIALS
#19 | 2026-09-10Methods for Reshaping Masking Layer Openings
#20 | 2026-09-10SELECTIVE TANTALUM NITRIDE DEPOSITION FOR BARRIER APPLICATIONS
#21 | 2026-09-10ATOMIC LAYER DEPOSITION WITH CARBON INHIBITION PROFILE TUNING
#22 | 2026-09-10RESONATOR COIL PITCH ADJUSTMENT SYSTEMS AND METHODS
#23 | 2026-09-10SYSTEM AND METHOD FOR ADJUSTING AN ION BEAM
#24 | 2026-09-10SEAM FREE MOLYBDENUM GAP FILL
#25 | 2026-09-03WAFER PLACEMENT SENSORS FOR SUBSTRATE RINSE SYSTEM
#26 | 2026-09-03METHOD AND APPARATUS FOR GENERATING PLASMA WITH ION BLOCKER PLATE
#27 | 2026-09-03METHODS FOR ATOMIC LAYER DEPOSITION OF SiCO(N) USING HALOGENATED SILYLAMIDES
#28 | 2026-08-27METHODS OF DEPOSITING SiCON WITH C, O AND N COMPOSITIONAL CONTROL
#29 | 2026-08-27VERTICAL DEVICE FORMED BY SELF-ALIGNED SEQUENTIAL PATTERNING OF TOP TRANSISTOR AND BOTTOM TRANSISTOR
#30 | 2026-08-27MULTI-THRESHOLD VOLTAGE INTEGRATION SCHEME FOR SEMICONDUCTOR DEVICES
#31 | 2026-08-27LOW TEMPERATURE N-TYPE CONTACT EPI FORMATION
#32 | 2026-08-27LINER TO FORM COMPOSITE HIGH-K DIELECTRIC
#33 | 2026-08-27SUPPORT LAYER FOR SMALL PITCH FILL
#34 | 2026-08-27TUNABLE IMPEDANCE MATCHING METHODS AND CIRCUITS FOR PROTECTION AGAINST SIDE-CHANNEL ATTACKS
#35 | 2026-08-27GAS DISTRIBUTION ASSEMBLIES FOR SEMICONDUCTOR DEVICES
#36 | 2026-08-27SYSTEM TO COLLECT, RECOVER AND RECYCLE CHEMICAL EXHAUST FROM SEMICONDUCTOR PROCESSING CHAMBERS
#37 | 2026-08-20THIN FILM-BASED SENSOR ARRAY
#38 | 2026-08-20LOCALIZED FILM STRESS MODULATION BY IMPLANT
#39 | 2026-08-20RECONFIGURABLE SYSTEMS BY SHIFTING MATERIALS INSIDE A CAVITY
#40 | 2026-08-20METHODS AND SYSTEMS FOR ARC SUPPRESSION DURING SEMICONDUCTOR FABRICATION PROCESSES
#41 | 2026-08-20MULTI-ZONE RF FOR WAFER EDGE PLASMA PROFILE TUNING
#42 | 2026-08-20METAL DEPOSITION FOR VOIDLESS GAP FILL
#43 | 2026-08-13Trench Tip Squaring in Self-Aligned Multi-Patterning Process
#44 | 2026-08-13DIE STRESS MODULATION FOR IMPROVED DEVICE LAYER STACKING
#45 | 2026-08-13ETCH STOP LAYER FOR 3D MEMORY
#46 | 2026-08-13APPARATUS AND TECHNIQUES FOR SUBSTRATE PROCESSING USING INDEPENDENT ION SOURCE AND RADICAL SOURCE
#47 | 2026-08-13METHOD FOR DETERMINING WAFER UNIFORMITY
#48 | 2026-08-13IN SITU CLEANING OF DEPOSITION CHAMBER WITH MICROWAVE PLASMA
#49 | 2026-08-13Surface Treatment For Selective Deposition
#50 | 2026-08-13COMPLIANT END-EFFECTOR FOR LOW-PARTICLE ATMOSPHERIC HANDLING OF WARPED WAFERS
#51 | 2026-08-06POWER DELIVERY FOR AI COMPUTING WITH ORTHOGONAL EMBEDDING AND EDGE ACCESS
#52 | 2026-08-06PROTECTION TREATMENTS FOR SURFACES OF SEMICONDUCTOR FABRICATION EQUIPMENT
#53 | 2026-08-06MAGNETIC THIN FILM PROCESS CHAMBER DESIGN FOR HIGH-DENSITY POWER CONVERTERS
#54 | 2026-08-06HALIDE-FREE CO-REACTANTS FOR RUTHENIUM FILM DEPOSITION
#55 | 2026-07-30BOTTOM PURGE FOR SEMICONDUCTOR PROCESSING SYSTEM
#56 | 2026-07-23FLEXIBLE HEATSINK INTERFACE
#57 | 2026-07-23WAFER BACKSIDE DEPOSITION CLEANING
#58 | 2026-07-23CAVITY CONTACT FORMATION USING PLASMA DOPING PROCESS
#59 | 2026-07-23SUBSTRATE STRESS MANAGEMENT USING HIGH TEMPERATURE IMPLANTATION
#60 | 2026-07-23RESISTIVITY-CONTROLLED DIELECTRIC MATERIALS FOR SUBSTRATE SUPPORTS WITH IMPROVED HIGH TEMPERATURE CHUCKING
#61 | 2026-07-23HIGH HEAT LOSS HEATER AND ELECTROSTATIC CHUCK FOR SEMICONDUCTOR PROCESSING
#62 | 2026-07-16ION IMPLANTER AND METHOD OF ION BEAM CONTROL USING ION BEAM IMAGING SYSTEM
#63 | 2026-07-09SEMICONDUCTOR PROCESSING CHAMBER ADAPTER
#64 | 2026-07-09SEMICONDUCTOR FILM PLATING PERIMETER MAPPING AND COMPENSATION
#65 | 2026-07-09MULTI-PORT CROSS FLOW SYSTEM
#66 | 2026-07-09BIPOLAR ELECTROSTATIC CHUCK ELECTRODE DESIGNS
#67 | 2026-07-09AMPOULE FOR A SEMICONDUCTOR MANUFACTURING PRECURSOR
#68 | 2026-07-09LASER ABLATION OF ELECTROSTATIC CHUCKS
#69 | 2026-07-02Cassette for Vapor Processing Chamber
#70 | 2026-06-25INTEGRATED WET CLEAN FOR GATE STACK DEVELOPMENT
#71 | 2026-06-25GRAIN GROWTH OF SILICON BY METAL INDUCED CRYSTALLIZATION
#72 | 2026-06-25PHASE MEASUREMENT AND CONTROL IN LINEAR ACCLERATOR
#73 | 2026-06-25DEPOSITION OF HALIDE-FREE METAL FILMS USING NOBLE METAL CATALYSTS
#74 | 2026-06-18ION IMPLANTATION AND VACUUM BAKE OF EXTREME ULTRAVIOLET PHOTORESIST TO IMPROVE FINE PATTERNING PERFORMANCE
#75 | 2026-06-18CONTROLLING TEMPERATURE UNIFORMITY OF A WAFER USING A WAFER PEDESTAL SHIELDING ELEMENT
#76 | 2026-06-18WAFER FIXED CHARGE CONTROL IN PHYSICAL VAPOR DEPOSITION
#77 | 2026-06-18ANGLED IMPLANT FOR PATTERNING FEATURE SURFACE ROUGHNESS IMPROVEMENT
#78 | 2026-06-18TWO-PIECE RF SHIELD DESIGN
#79 | 2026-06-18MULTI-STAGE MACHINE VISION TECHNIQUE FOR ANALYZING IMAGES OF OBJECTS
#80 | 2026-06-18HYDROGEN ADDITION TO LOW-K DIELECTRIC BARRIER FILMS
#81 | 2026-06-18METHOD OF FORMING INTERCONNECT STRUCTURE
#82 | 2026-06-11HIGHLY-EFFECTIVE ULTRATHIN SPUTTER ABLE AND TAMPER-RESISTANT SHIELDS WITH METAL-REFRACTORY ALLOY STACKS
#83 | 2026-06-11PLASMA TREATMENT PROCESSES FOR MICROELECTRONIC DEVICE MANUFACTURE
#84 | 2026-06-11PLASMA TREATMENT PROCESSES FOR SELECTIVE DEPOSITION
#85 | 2026-06-11SELECTIVE DEPOSITION OF SILICON NITRIDE
#86 | 2026-06-11METHOD OF FORMING IMAGE SENSOR INCLUDING AIR GRID
#87 | 2026-06-11NOTCHED SUSCEPTOR DESIGN FOR STABLE SHADOW FRAME
#88 | 2026-06-11SELECTIVE DEPOSITION OF SILICON NITRIDE
#89 | 2026-05-28GATE ALL AROUND BACKSIDE POWER RAIL FORMATION WITH MULTI-COLOR BACKSIDE DIELECTRIC ISOLATION SCHEME
#90 | 2026-05-28SURFACE CONDITIONING PROCESSES FOR SEMICONDUCTOR PROCESSING CHAMBER PARTS
#91 | 2026-05-28Modifying Openings of an Extreme Ultraviolet Masking Layer
#92 | 2026-05-28SYSTEM AND METHOD FOR RESONATOR TUNING USING VARIABLE CAPACITOR
#93 | 2026-05-28SUBSTRATE PROPERTY CONTROL USING DOSE-DEPENDENT RESPONSE
#94 | 2026-05-28SCANNED BEAM DOSE RATE MEASUREMENT FOR ION BEAM OPTIMIZATION
#95 | 2026-05-28LINE CD MODULATION AND END-TO-END CD MANIPULATION WITH ANGLED ETCH & DEPOSITION
#96 | 2026-05-28INTEGRATED WET CLEAN FOR BEVEL TREATMENTS
#97 | 2026-05-28SUBSTRATE POLISHING HEAD FOR OPTICAL ENHANCEMENT ANALYSIS
#98 | 2026-05-28MASK WRITING SYSTEM, BEAM SHAPING MODULE AND METHOD OF LASER BEAM PROCESSING
#99 | 2026-05-21SELECTIVE ETCHING OF SILICON-CONTAINING MATERIAL RELATIVE TO METAL-DOPED BORON FILMS
#100 | 2026-05-21ANGLED ION IMPLANT TO ENABLE VOID-FREE FILLING OF HIGH ASPECT RATIO TRENCH
Also check out Applied Materials, Inc.'s (Santa Clara, United States) applicant profile with 9,650 patent applications submitted.
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