Santa Clara, California
United States
12,724
2026-05-28
10,689
2026-04-28
Applied Materials, Inc. is a global leader in the semiconductor and display industries, based in Santa Clara, US. Founded in 1967, the company provides innovative equipment, services and software to enable the manufacture of advanced semiconductor, flat panel display and solar photovoltaic products. Applied Materials has a broad portfolio of products and services that address the full range of manufacturing needs from research and development to manufacturing and process control. The company has operations in more than 30 countries and serves customers in the electronics, energy, healthcare and industrial markets.
These are the the leading inventors for applications assigned to Applied Materials, Inc.:
Applied Materials, Inc. based in Santa Clara, US has been assigned the rights to these inventions. The list includes both Pending Applications and Patent Grants:
GATE ALL AROUND BACKSIDE POWER RAIL FORMATION WITH MULTI-COLOR BACKSIDE DIELECTRIC ISOLATION SCHEME
#2 | 2026-05-28SURFACE CONDITIONING PROCESSES FOR SEMICONDUCTOR PROCESSING CHAMBER PARTS
#3 | 2026-05-28Modifying Openings of an Extreme Ultraviolet Masking Layer
#4 | 2026-05-28SYSTEM AND METHOD FOR RESONATOR TUNING USING VARIABLE CAPACITOR
#5 | 2026-05-28SUBSTRATE PROPERTY CONTROL USING DOSE-DEPENDENT RESPONSE
#6 | 2026-05-28SCANNED BEAM DOSE RATE MEASUREMENT FOR ION BEAM OPTIMIZATION
#7 | 2026-05-28LINE CD MODULATION AND END-TO-END CD MANIPULATION WITH ANGLED ETCH & DEPOSITION
#8 | 2026-05-28INTEGRATED WET CLEAN FOR BEVEL TREATMENTS
#9 | 2026-05-28SUBSTRATE POLISHING HEAD FOR OPTICAL ENHANCEMENT ANALYSIS
#10 | 2026-05-28MASK WRITING SYSTEM, BEAM SHAPING MODULE AND METHOD OF LASER BEAM PROCESSING
#11 | 2026-05-21SELECTIVE ETCHING OF SILICON-CONTAINING MATERIAL RELATIVE TO METAL-DOPED BORON FILMS
#12 | 2026-05-21ANGLED ION IMPLANT TO ENABLE VOID-FREE FILLING OF HIGH ASPECT RATIO TRENCH
#13 | 2026-05-21CONFINED CHARGE TRAP LAYER
#14 | 2026-05-21DRIFT TUBE ASSEMBLY FOR LINEAR ACCELERATORS
#15 | 2026-05-14CARBON-DOPED PVD DEPOSITED COBALT LINER LAYER FOR IMPROVED CU REFLOW
#16 | 2026-05-14INTEGRATED WET CLEAN FOR EPITAXIAL GROWTH
#17 | 2026-05-14MULTI-COMPARTMENT GAS PANEL ASSEMBLY
#18 | 2026-05-14REMOVING OR PREVENTING RESIDUE SUBSEQUENT TO REPAIRING LOW-K MATERIALS
#19 | 2026-05-14SYSTEMS AND METHODS FOR DEPOSITION RESIDUE CONTROL
#20 | 2026-05-14REPAIRING LOW-K MATERIALS WITH SILICON-FREE TREATMENT PRECURSORS TO PREVENT SILICON RESIDUE FORMATION
#21 | 2026-05-14OXIDATION GROWTH MODULATION
#22 | 2026-05-14DIRECT WORD LINE CONTACT AND METHODS OF MANUFACTURE FOR 3D MEMORY
#23 | 2026-05-14BATCH PROCESSING CHAMBERS FOR PLASMA-ENHANCED DEPOSITION
#24 | 2026-05-14BEAM CONDITIONING FOR DEFECT CONTROL IN BEAMLINE ION IMPLANTER
#25 | 2026-05-14AMPOULE FOR A SEMICONDUCTOR MANUFACTURING PRECURSOR
#26 | 2026-05-07METHODS OF SELECTIVELY ETCHING SILICON
#27 | 2026-05-07METHODS OF DEPOSITING THERMALLY CONDUCTIVE POLYMERIC FILMS
#28 | 2026-05-07STAGGERED BIT LINES FOR ADVANCED DRAM
#29 | 2026-05-07WORD LINE CONTACT FOR 3D MEMORY
#30 | 2026-05-07SYSTEM AND METHOD FOR HIGH ANGLE ION BEAM
#31 | 2026-05-07OPTICAL INSPECTION OF WAFER BEVELS USING MULTIPLE LIGHT SOURCES
#32 | 2026-05-07CONTROLLING ARCING WITH SEASON
#33 | 2026-04-30Subtractive Metal flow with Tip-to-Tip Critical Dimension Reduction
#34 | 2026-04-30DIRECTIONAL ANGLED ETCH FOR HARDMASK OPENING AND LWR IMPROVEMENT
#35 | 2026-04-30METHODS OF IMPROVING EUV PATTERNING OF CONTACT HOLES AND VIAS BY ION IMPLANT AND DIRECTIONAL DEPOSITION
#36 | 2026-04-30METHODS OF DEPOSITING REFLOWABLE POLYMER FILMS
#37 | 2026-04-30SYSTEM FOR TARGET ARCING MAPPING AND PLASMA DIAGNOSIS
#38 | 2026-04-30ENERGY MEASUREMENT SYSTEM AND METHOD OF ENERGY MEASUREMENT IN LINEAR ACCELERATOR
#39 | 2026-04-23FAST BEAM CALIBRATION PROCEDURE FOR BEAMLINE ION IMPLANTER
#40 | 2026-04-23LIFT PIN ASSEMBLY FOR SUBSTRATE PROCESSING CHAMBER
#41 | 2026-04-23PROCESSING METHODS TO IMPROVE ETCHED SILICON-AND-GERMANIUM-CONTAINING MATERIAL SURFACE PROPERTIES
#42 | 2026-04-23LARGE AREA GAPFILL USING VOLUMETRIC EXPANSION
#43 | 2026-04-23POROSITY-FREE PHENOLIC EPOXIES
#44 | 2026-04-16CONTROLLING AUTO-DOPING IN EPITAXIALLY GROWN SILICON-CONTAINING MATERIALS
#45 | 2026-04-16NANOPILLAR STRUCTURE OF IMAGE SENSOR DEVICE AND METHOD OF FORMING
#46 | 2026-04-16SHAPED ION BLOCKER PLATE FOR INDIRECT CCP
#47 | 2026-04-16SHIELD FOR ENHANCED PRECURSOR PURGING
#48 | 2026-04-16METHODS OF DEPOSITING METAL-CONTAINING FILMS HAVING A COMPOSITION GRADIENT
#49 | 2026-04-09LOW RESISTIVITY METAL STACKS AND METHODS OF DEPOSITING THE SAME
#50 | 2026-04-09BONDED DEVICE HAVING SPLIT BONDING LAYER AND METHODS OF FORMATION
#51 | 2026-04-09METHODS OF DEPOSITING IRIDIUM-CONTAINING FILMS FOR MICROELECTRONIC DEVICES
#52 | 2026-04-09CYCLIC ETCH OF SILICON OXIDE AND POLYSILICON
#53 | 2026-04-09COMBINED THERMAL AND PLASMA ASSISTED ATOMIC LAYER DEPOSITION
#54 | 2026-04-09PRECURSOR DELIVERY SYSTEM
#55 | 2026-04-09MULTIPLE PORT GAS INJECTION AND EXHAUST FOR BATCH SUBSTRATE PROCESSING CHAMBER
#56 | 2026-04-02MODULAR MULTI-DIRECTIONAL GAS MIXING BLOCK
#57 | 2026-04-02METHOD AND MATERIAL SYSTEM FOR MULTI-THRESHOLD-VOLTAGE GATES IN SEMICONDUCTOR STRUCTURES
#58 | 2026-04-02GREYSCALE LITHOGRAPHY FOR SUBSTRATE TOPOGRAPHY CORRECTION
#59 | 2026-03-26GATE-ALL-AROUND TRANSISTORS AND METHODS OF FORMING
#60 | 2026-03-26ION IMPLANTER, CONTROL SYSTEM, AND TECHNIQUES FOR TUNING BUNCHER OF ION IMPLANTER
#61 | 2026-03-19VARIABLE CONDUCTANCE EDGE RING FOR VAPOR DEPOSITION CHAMBER
#62 | 2026-03-12DEPOSITION OF N-METAL FILMS
#63 | 2026-03-12INTEGRATED PROCESS AND PROCESSING SYSTEM FOR MANUFACTURING PMOS TRANSISTORS
#64 | 2026-03-12LINEAR ACCELERATOR HAVING ROBUST POWER FEEDTHROUGH
#65 | 2026-03-12PROCESSING CHAMBER WITH GAS RECYCLING
#66 | 2026-03-05SELECTIVE MATERIAL REMOVAL WITH ANGULAR BEAM
#67 | 2026-03-05METHOD TO ENLARGE FEATURES IN SEMICONDUCTOR DEVICE LAYERS USING ION IMPLANTS OF DIFFERENT TEMPERATURES
#68 | 2026-03-05Ion Beam-Induced Epitaxial Crystallization on an Integrated Processing Architecture
#69 | 2026-03-05MEMRISTIVE COMPUTING SCHEMES IN THE BACK-END-OF-THE-LINE
#70 | 2026-03-05MEMRISTIVE COMPUTING SCHEMES IN THE BACK-END-OF-THE-LINE
#71 | 2026-03-05WIDE-BANDGAP SUPER JUNCTION STRUCTURES FOR POWER DEVICES
#72 | 2026-03-05EPI LINER SUPER JUNCTION DEVICES WITH DIFFUSION BARRIER
#73 | 2026-03-05TRENCH-BASED SUPER JUNCTION STRUCTURES VIA SIDEWALL DOPING
#74 | 2026-03-054F2 DRAM WITH BACKSIDE CONTACT
#75 | 2026-03-05 ✅ Patent 12,615,706 granted on 2026-04-28APPROACH TO INCREASE LINAC OPERATING RANGE OF LINEAR ACCELERATOR
#76 | 2026-03-05PARTICLE ACCELERATOR HAVING CONFIGURABLE QUADRUPOLE ASSEMBLY
#77 | 2026-02-26NOVEL SWITCHING INDUCTOR
#78 | 2026-02-26RAPID PROGRAMMING OF MEMORY ARRAYS WITH CONCURRENT PROGRAMMING AND VERIFICATION
#79 | 2026-02-19USE BACK SIDE POWER VIAS FOR SIGNALS
#80 | 2026-02-19DEEP TRENCH ISOLATION ETCHING
#81 | 2026-02-19SELECTIVE ETCHING OF SILICON-CONTAINING MATERIAL
#82 | 2026-02-19SELECTIVE ETCHING OF SILICON-AND-GERMANIUM-CONTAINING MATERIAL
#83 | 2026-02-19TRANSISTOR BILAYER DIELECTRIC WALL
#84 | 2026-02-19TRANSITION METAL CONTAINING CONTACT WITH REDUCED CONTACT RESISTIVITY
#85 | 2026-02-19SEMICONDUCTOR DEVICES HAVING REDUCED CONTACT RESISTIVITY
#86 | 2026-02-19 ✅ Patent 12,603,252 granted on 2026-04-14LOW-FLOW RADICAL GAS GEOMETRICAL CONTROL THROUGH TWO-DIMENSIONAL COMPRESSION BETWEEN PLASMA SOURCE AND CHEMICAL REACTOR
#87 | 2026-02-19HYBRID SEMICONDUCTOR GAS FLOW COMPONENTS WITH SMOOTH INTERNAL WALLS
#88 | 2026-02-19MULTI-STATION SUBSTRATE PROCESSING CHAMBER WITH PRECISE TEMPERATURE AND FLOW CONTROL
#89 | 2026-02-12Methods Of Operating A Spatial Deposition Tool
#90 | 2026-02-12UNIFORM SILICON OXIDE ETCHING METHODS
#91 | 2026-02-12DIRECTIONAL SELECTIVE FILL FOR SILICON GAP FILL PROCESSES
#92 | 2026-02-12METHODS OF FORMING TRANSITION METAL DICHALCOGENIDE FILMS
#93 | 2026-02-12MULTI-THRESHOLD VOLTAGE INTEGRATION SCHEMES FOR SEMICONDUCTOR DEVICES
#94 | 2026-02-12Integrated CMOS Source Drain Formation With Advanced Control
#95 | 2026-02-12TRANSISTOR DIRECT BACKSIDE CONTACT WITH ETCH STOP LAYER
#96 | 2026-02-12DRAM CELL FABRICATION APPROACHES FOR DOPED MOLD
#97 | 2026-02-12SACRIFICIAL METAL SIGNAL OR POWER LINE
#98 | 2026-02-12 ✅ Patent 12,572,770 granted on 2026-03-10Tracking System on Matrix Two-Dimensional Code Labels
#99 | 2026-02-12INTERLOCK SYSTEM FOR PROCESSING CHAMBER EXHAUST ASSEMBLY
#100 | 2026-02-12DEPOSITION RING FOR PHYSICAL VAPOR DEPOSITION CHAMBER
Also check out Applied Materials, Inc.'s (Santa Clara, United States) applicant profile with 9,266 patent applications submitted.
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