Inventor profile of:

Son Nguyen

City:

Schenectady, New York

Country:

United States

Published Applications:

50

Last publication date:

2026-06-18

Top Assignees for applications by Son Nguyen

The entities that hold a legal rights for patent applications filed by inventor Nguyen Son:

Recent patent applications by Nguyen Son

Son Nguyen from Schenectady, US has applied for patents for these inventions. The list has both pending applications and granted patents:

#1 | 2026-06-18
US20260173857A1
Electricity

GRAPHENE CAP LAYER WITH COMPOSITE ETCH STOP LAYER

#2 | 2026-02-12
US20260047411A1
Electricity

DAMASCENE INTERCONNECTS WITH BILAYER LINER

#3 | 2025-12-11
US20250379150A1
Electricity

LOW-K DIELECTRIC MATERIAL FOR INTERCONNECT STRUCTURES

#4 | 2025-10-02
US20250309099A1
Electricity

DIRECTIONAL CONDUCTOR INTERCONNECT WITH EMBEDDED VIA

#5 | 2024-12-05
US20240404949A1
Electricity

METAL INTERCONNECT LAYERS FOR FET ARCHITECTURES

#6 | 2024-10-03
US20240332398A1
Electricity

HIGH DENSITY METAL-INSULATOR-METAL CAPACITOR

#7 | 2024-09-26
US20240324469A1
Electricity

ENCASPULATED MRAM DEVICE WITH WRAP-AROUND TOP ELECTRODE

#8 | 2024-09-19
US20240312834A1
Electricity

AIR GAP IN BEOL INTERCONNECT

#9 | 2024-07-04
US20240222278A1
Electricity

GRAPHENE COATED INTERCONNECTS WITH AIRGAP STRUCTURES

#10 | 2024-05-02
US20240145473A1
Electricity

STACKED FIELD EFFECT TRANSISTOR STRUCTURE WITH INDEPENDENT GATE CONTROL BETWEEN TOP AND BOTTOM GATES

#11 | 2024-04-04
US20240113176A1
Electricity

FIELD EFFECT TRANSISTOR WITH BACKSIDE SOURCE/DRAIN

#12 | 2024-04-04
US20240112985A1
Electricity

FIELD EFFECT TRANSISTOR WITH BACKSIDE SOURCE/DRAIN

#13 | 2024-03-28
US20240105613A1
Electricity

DIRECT BACKSIDE CONTACT WITH REPLACEMENT BACKSIDE DIELECTRIC

#14 | 2024-03-07
US20240079446A1
Electricity

BACKSIDE CONTACT THAT REDUCES RISK OF CONTACT TO GATE SHORT

#15 | 2023-07-27
US20230238236A1
Electricity

SELECTIVE DEPOSITION AND CROSS-LINKING OF POLYMERIC DIELECTRIC MATERIAL

#16 | 2023-06-22
US20230197418A1
Electricity

SELECTIVE DEPOSITION ENABLED BY VAPOR PHASE INHIBITOR

#17 | 2023-06-15
US20230187342A1
Electricity

DOPANT-FREE INHIBITOR FOR AREA SELECTIVE DEPOSITIONS

#18 | 2023-06-08
US20230178432A1
Electricity

Etch Back and Film Profile Shaping of Selective Dielectric Deposition

#19 | 2023-06-08
US20230178370A1
Electricity

SAM FORMULATIONS AND CLEANING TO PROMOTE QUICK DEPOSITIONS

#20 | 2023-05-18
US20230154757A1
Electricity

SELECTIVE DEPOSITION ON METALS USING POROUS LOW-K MATERIALS

#21 | 2023-05-11
US20230146034A1
Electricity

LEVELING DIELECTRIC SURFACES FOR CONTACT FORMATION WITH EMBEDDED MEMORY ARRAYS

#22 | 2023-04-06
US20230106397A1
Electricity

Composite interconnect formation using graphene

#23 | 2022-11-10
US20220359390A1
Electricity

Semiconductor structure having alternating selective metal and dielectric layers

#24 | 2021-10-07
US20210313228A1
Electricity

Selective deposition with SAM for fully aligned via

#25 | 2021-05-20
US20210151579A1
Electricity

Nano multilayer carbon-rich low-k spacer

#26 | 2021-04-01
US20210098292A1
Electricity

Metallic interconnect structure

#27 | 2020-09-15
US16427779
Electricity

Semiconductor device with selective dielectric deposition

#28 | 2020-07-23
US20200234949A1
Electricity

Forming high carbon content flowable dielectric film with low processing damage

#29 | 2020-06-04
US20200176263A1
Electricity

Semiconductor structures of more uniform thickness

#30 | 2020-04-16
US20200119089A1
Electricity

Dielectric fill for memory pillar elements

#31 | 2020-04-09
US20200111951A1
Electricity

Multi-layer encapsulation to enable endpoint-based process control for embedded memory fabrication

#32 | 2020-03-12
US20200083345A1
Electricity

Nano multilayer carbon-rich low-k spacer

#33 | 2020-02-27
US20200066834A1
Electricity

Fabrication of a MIM capacitor structure with via etch control with integrated maskless etch tuning layers

#34 | 2020-01-16
US20200020542A1
Electricity

Disposable laser/flash anneal absorber for embedded neuromorphic memory device fabrication

#35 | 2019-10-31
US20190334009A1
Electricity

Asymmetric air spacer gate-controlled device with reduced parasitic capacitance

#36 | 2019-10-31
US20190333983A1
Electricity

Fabrication of a MIM capacitor structure with via etch control with integrated maskless etch tuning layers

#37 | 2018-04-19
US20180108596A1
Electricity

Air gap and air spacer pinch off

#38 | 2018-03-29
US20180090588A1
Electricity

Air gap and air spacer pinch off

#39 | 2018-03-29
US20180090587A1
Electricity

Air gap and air spacer pinch off

#40 | 2018-03-29
US20180090418A1
Electricity

Air gap and air spacer pinch off

#41 | 2017-10-17
US15299906
Electricity

Air gap and air spacer pinch off

#42 | 2017-10-10
US15280457
Electricity

Air gap and air spacer pinch off

#43 | 2014-09-25
US20140284815A1
Electricity

Interlevel dielectric stack for interconnect structures

#44 | 2014-09-11
US20140256154A1
Electricity

Interlevel dielectric stack for interconnect structures

#45 | 2014-06-26
US20140179119A1
Electricity

Advanced low k cap film formation process for nano electronic devices

#46 | 2013-12-05
US20130320544A1
Electricity

Corrosion/etching protection in integration circuit fabrications

#47 | 2013-01-03
US20130005146A1
Performing operations; transporting

Multilayered low k cap with conformal gap fill and UV stable compressive stress properties

#48 | 2012-08-09
US20120202354A1
Electricity

Advanced low k cap film formation process for nano electronic devices

#49 | 2012-08-02
US20120193767A1
Electricity

ADVANCED LOW k CAP FILM FORMATION PROCESS FOR NANO ELECTRONIC DEVICES

#50 | 2009-07-16
US20090179306A1
Electricity

Advanced low k cap film formation process for nano electronic devices

InventorID:

12475 ⎘