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Inventor profile of:

Peter Lechner

City:

Holzkirchen

Country:

Germany

Published Applications:

Last publication date:

2024-09-26

Top Assignees for applications by Peter Lechner

The entities that hold a legal rights for patent applications filed by inventor Lechner Peter:

INFINEON TECHNOLOGIES AG 10 Neubiberg, Germany
Max-Planck-Gesellschaft zur Forderung der Wissenschaften E.V. 3 Munich, Germany
Max-Planck-Gesellschaft zur Förderung der Wissenschaften e.V. 2 Munchen, Germany
Max-Planck-Gesellschaft zur Foerderung der Wissenschaften e.V. 1 Munich, Germany
Max-Planck-Gesellschaft zur Forderung der Wissensc haften e.V. 1 Munich, Germany

Recent patent applications by Lechner Peter

Peter Lechner from Holzkirchen, DE has applied for patents for these inventions. The list has both pending applications and granted patents:

#1 | 2024-09-26

US20240322038A1

Electricity

DEPFET TRANSISTOR

#2 | 2022-09-01

US20220278233A1

Electricity

DEPFET transistor and method of manufacturing a DEPFET transistor

#3 | 2019-09-19

US20190288094A1

Electricity

Semiconductor device with separation regions

#4 | 2018-05-24

US20180145161A1

Electricity

Semiconductor device with separation regions

#5 | 2018-03-29

US20180090594A1

Electricity

Method of manufacturing a semiconductor device having electrode trenches, isolated source zones and separation structures

#6 | 2017-05-25

US20170148893A1

Electricity

Method of manufacturing a semiconductor device having electrode trenches, isolated source zones and separation structures

#7 | 2017-04-20

US20170110574A1

Electricity

Semiconductor device with control structure including buried portions and method of manufacturing

#8 | 2016-03-31

US20160093724A1

Electricity

Semiconductor device and reverse conducting insulated gate bipolar transistor with isolated source zones

#9 | 2016-03-10

US20160071974A1

Electricity

Semiconductor device with control structure including buried portions and method of manufacturing

#10 | 2015-11-12

US20150325688A1

Electricity

Semiconductor device and reverse conducting insulated gate bipolar transistor with isolated source zones

#11 | 2015-11-12

US20150325687A1

Electricity

Semiconductor device and insulated gate bipolar transistor with source zones formed in semiconductor mesas

#12 | 2015-10-15

US20150295034A1

Electricity

Semiconductor device with semiconductor mesa including a constriction

#13 | 2008-09-25

US20080230811A1

Electricity

Semiconductor structure

#14 | 2006-09-12

US10741198

Semiconductor detector with optimised radiation entry window

InventorID:

1324887 ⎘