Ottobrunn
Germany
4
2018-08-09
The entities that hold a legal rights for patent applications filed by inventor HONG YANG:
YANG HONG from Ottobrunn, DE has applied for patents for these inventions. The list has both pending applications and granted patents:
Memory circuit and method for operating a first MRAM and a second MRAM set of memory cells configured to operate in a direct access mode and/or refresh mode
#2 | 2017-06-22Memory circuit and method for operating a first and a second set of memory cells in direct memory access mode with refresh
#3 | 2015-10-29Methods for fabricatingintegrated circuits with spin torque transfer magnetic randomaccess memory (STT-MRAM) including a passivation layer formed along lateral sidewalls of a magnetic tunnel junction of the STT-MRAM
#4 | 2015-10-20Non-volatile memory cell arrays and methods of fabricating semiconductor devices
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