Dresden
Germany
31
2017-06-01
The entities that hold a legal rights for patent applications filed by inventor Kurz Andreas:
Andreas Kurz from Dresden, DE has applied for patents for these inventions. The list has both pending applications and granted patents:
Raised e-fuse
#2 | 2017-03-02Raised e-fuse
#3 | 2016-07-14INTEGRATED CIRCUITS WITH ELECTRONIC FUSE STRUCTURES
#4 | 2016-05-19MEANDER RESISTOR
#5 | 2016-02-18Integrated circuits with electronic fuse structures
#6 | 2015-11-19MEANDER RESISTOR
#7 | 2015-06-25Semiconductor device comprising an e-fuse and a FET
#8 | 2015-02-05Semiconductor fuse with enhanced post-programming resistance
#9 | 2013-12-26Semiconductor device fabrication methods
#10 | 2013-11-28SEMICONDUCTOR FUSE WITH ENHANCED POST-PROGRAMMING RESISTANCE
#11 | 2013-11-21Semiconductor device comprising metal-based eFuses of enhanced programming efficiency by enhancing metal agglomeration and/or voiding
#12 | 2013-11-14BEOL anti-fuse structures for gate last semiconductor devices
#13 | 2013-06-13Metal e-fuse with intermetallic compound programming mechanism and methods of making same
#14 | 2013-03-14BEOL anti-fuse structures for gate last semiconductor devices
#15 | 2013-03-14Semiconductor fuse with enhanced post-programming resistance
#16 | 2012-06-28Method of Forming a Semiconductor Device Comprising eFuses of Increased Programming Window
#17 | 2012-01-05Semiconductor device comprising high-k metal gate electrode structures and precision eFuses formed in the active semiconductor material
#18 | 2011-11-03Stress memorization with reduced fringing capacitance based on silicon nitride in MOS semiconductor devices
#19 | 2011-11-03Semiconductor device comprising metal gates and semiconductor resistors formed on the basis of a replacement gate approach
#20 | 2011-10-06Semiconductor device comprising metal-based eFuses of enhanced programming efficiency by enhancing heat generation
#21 | 2011-10-06Methods of forming efuse devices
#22 | 2011-10-06Electronic fuse structure formed using a metal gate electrode material stack configuration
#23 | 2011-08-04SEMICONDUCTOR RESISTORS FORMED IN A SEMICONDUCTOR DEVICE COMPRISING METAL GATES BY REDUCING CONDUCTIVITY OF A METAL-CONTAINING CAP MATERIAL
#24 | 2011-06-30SEMICONDUCTOR DEVICE COMPRISING METAL-BASED eFUSES OF ENHANCED PROGRAMMING EFFICIENCY BY ENHANCING METAL AGGLOMERATION AND/OR VOIDING
#25 | 2011-06-30SILICON-BASED SEMICONDUCTOR DEVICE COMPRISING eFUSES FORMED BY AN EMBEDDED SEMICONDUCTOR ALLOY
#26 | 2011-06-02Performance enhancement in transistors comprising high-K metal gate stack by reducing a width of offset spacers
#27 | 2010-12-02Semiconductor devices with improved local matching and end resistance of RX based resistors
#28 | 2010-07-01SOI device with a buried insulating material having increased etch resistivity
#29 | 2010-05-06Semiconductor device comprising eFUSES of enhanced programming efficiency
#30 | 2010-04-01Semiconductor device comprising a buried poly resistor
#31 | 2010-02-04Semiconductor device comprising a silicon/germanium resistor
134763 ⎘