Inventor profile of:

MARK MURIN

City:

KFAR SABA

Country:

Israel

Published Applications:

46

Last publication date:

2023-04-06

Top Assignees for applications by MARK MURIN

The entities that hold a legal rights for patent applications filed by inventor MURIN MARK:

Recent patent applications by MURIN MARK

MARK MURIN from KFAR SABA, IL has applied for patents for these inventions. The list has both pending applications and granted patents:

#1 | 2023-04-06
US20230106371A1
Physics

Storage system and method for program reordering to mitigate program disturbs

#2 | 2022-06-28
US17165703
Physics

Time division peak power management for non-volatile storage

#3 | 2021-12-30
US20210405920A1
Physics

Peak power reduction management in non-volatile storage by delaying start times operations

#4 | 2018-10-25
US20180307503A1
Physics

Event-driven schemes for determining suspend/resume periods

#5 | 2017-07-11
US15087242
Physics

Self-detecting a heating event to non-volatile storage

#6 | 2015-06-04
US20150154112A1
Physics

Batch command techniques for a data storage device

#7 | 2015-04-30
US20150117098A1
Physics

Power drop protection for a data storage device

#8 | 2014-11-18
US14285433
Physics

Power drop protection for a data storage device

#9 | 2013-04-18
US20130097368A1
Physics

AD HOC flash memory reference cells

#10 | 2013-03-14
US20130067151A1
Physics

Method for efficient storage of metadata in flash memory

#11 | 2011-09-22
US20110231740A1
Physics

Method for Recovering From Errors in Flash Memory

#12 | 2011-01-20
US20110013450A1
Physics

Method for adaptive setting of state voltage levels in non-volatile memory

#13 | 2010-10-28
US20100274962A1
Physics

Method and apparatus for implementing a caching policy for non-volatile memory

#14 | 2010-10-28
US20100274955A1
Physics

Flash memory storage system and method

#15 | 2010-10-07
US20100257428A1
Physics

Method for implementing error-correction codes in non-volatile memory

#16 | 2010-08-05
US20100199135A1
Physics

Method, system and computer-readable code to test flash memory

#17 | 2010-01-07
US20100005370A1
Electricity

Probabilistic error correction in multi-bit-per-cell flash memory

#18 | 2010-01-07
US20100005367A1
Electricity

Probabilistic error correction in multi-bit-per-cell flash memory

#19 | 2009-12-31
US20090327841A1
Electricity

Probabilistic error correction in multi-bit-per-cell flash memory

#20 | 2009-12-24
US20090319722A1
Physics

Ad hoc flash memory reference cells

#21 | 2009-12-03
US20090296487A1
Physics

Increasing read throughput in non-volatile memory

#22 | 2009-10-29
US20090268517A1
Physics

Non-volatile memory with adaptive setting of state voltage levels

#23 | 2009-10-29
US20090268516A1
Physics

Method for adaptive setting of state voltage levels in non-volatile memory

#24 | 2009-08-27
US20090217131A1
Electricity

Probabilistic error correction in multi-bit-per-cell flash memory

#25 | 2009-07-16
US20090183049A1
Electricity

Probabilistic error correction in multi-bit-per-cell flash memory

#26 | 2009-07-02
US20090172498A1
Physics

Error correction in copy back memory operations

#27 | 2009-07-02
US20090168516A1
Physics

Method for generating soft bits in flash memories

#28 | 2009-05-28
US20090135646A1
Physics

Operation sequence and commands for measuring threshold voltage distribution in memory

#29 | 2009-04-30
US20090113120A1
Physics

States encoding in multi-bit flash cells for optimizing error rate

#30 | 2009-03-12
US20090070657A1
Physics

Method of error correction in MBC flash memory

#31 | 2008-10-30
US20080270730A1
Physics

Method for efficient storage of metadata in flash memory

#32 | 2008-10-23
US20080259684A1
Physics

Programming a NAND flash memory with reduced program disturb

#33 | 2008-01-03
US20080002465A1
Physics

Multi-bit-per-cell flash memory device with an extended set of commands

#34 | 2007-10-11
US20070237006A1
Physics

Method for generating soft bits in flash memories

#35 | 2007-08-02
US20070180346A1
Physics

Method of arranging data in a multi-level cell memory device

#36 | 2007-07-19
US20070168837A1
Physics

Method for implementing error-correction codes in flash memory

#37 | 2007-05-17
US20070113000A1
Physics

Flash memory device and method

#38 | 2007-05-10
US20070106834A1
Physics

Device and method for monitoring operation of a flash memory

#39 | 2007-04-26
US20070091677A1
Physics

Method for recovering from errors in flash memory

#40 | 2007-04-19
US20070089034A1
Physics

Method of error correction in MBC flash memory

#41 | 2007-04-19
US20070086239A1
Electricity

Probabilistic error correction in multi-bit-per-cell flash memory

#42 | 2007-03-15
US20070061502A1
Physics

Flash memory storage system and method

#43 | 2006-09-28
US20060216841A1
Physics

Method, system and computer-readable code for testing of flash memory

#44 | 2006-07-13
US20060155919A1
Physics

Method of managing a multi-bit cell flash memory with improved reliablility and performance

#45 | 2006-06-22
US20060133157A1
Physics

Method of handling limitations on the order of writing to a non-volatile memory

#46 | 2006-05-11
US20060101193A1
Physics

States encoding in multi-bit flash cells for optimizing error rate

InventorID:

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