San Jose, California
United States
27
2023-09-28
The entities that hold a legal rights for patent applications filed by inventor Kalitsov Alan:
Alan Kalitsov from San Jose, US has applied for patents for these inventions. The list has both pending applications and granted patents:
MAGNETORESISTIVE MEMORY DEVICE AND METHOD OF OPERATING SAME USING PHASE CONTROLLED MAGNETIC ANISOTROPY
#2 | 2023-09-28Magnetoresistive memory device and method of operating same using ferroelectric-controlled exchange coupling
#3 | 2023-09-28Magnetoresistive memory device and method of operating same using ferroelectric-controlled exchange coupling
#4 | 2023-04-06Voltage controlled magnetic anisotropy (VCMA) memory devices including platinum containing layer in contact with free layer
#5 | 2022-12-08Voltage-controlled magnetic anisotropy memory device including an anisotropy-enhancing dust layer and methods for forming the same
#6 | 2022-12-08Voltage-controlled magnetic anisotropy memory device including an anisotropy-enhancing dust layer and methods for forming the same
#7 | 2022-12-08Voltage-controlled magnetic anisotropy memory device including an anisotropy-enhancing dust layer and methods for forming the same
#8 | 2022-04-28Magnetic tunnel junction memory devices employing resonant tunneling and methods of manufacturing the same
#9 | 2022-04-28Magnetic tunnel junction memory devices employing resonant tunneling and methods of manufacturing the same
#10 | 2022-04-28Magnetic tunnel junction memory devices employing resonant tunneling and methods of manufacturing the same
#11 | 2022-03-03Multiferroic-assisted voltage controlled magnetic anisotropy memory device and methods of manufacturing the same
#12 | 2022-03-03Multiferroic-assisted voltage controlled magnetic anisotropy memory device and methods of manufacturing the same
#13 | 2021-10-21Tunneling metamagnetic resistance memory device and methods of operating the same
#14 | 2021-10-21Tunneling metamagnetic resistance memory device and methods of operating the same
#15 | 2021-10-14Magnetoresistive memory device including a plurality of reference layers
#16 | 2021-08-05Magnetic device including multiferroic regions and methods of forming the same
#17 | 2021-05-27Magnetoresistive memory device including a high dielectric constant capping layer and methods of making the same
#18 | 2021-05-27Magnetoresistive memory device including a high dielectric constant capping layer and methods of making the same
#19 | 2021-05-20Electric field controllable spin filter tunnel junction magnetoresistive memory devices and methods of making the same
#20 | 2020-10-08Ferroelectric memory devices employing conductivity modulation of a thin semiconductor material or a two-dimensional charge carrier gas and methods of operating the same
#21 | 2020-07-23Voltage-controlled interlayer exchange coupling magnetoresistive memory device and method of operating thereof
#22 | 2020-07-23Voltage-controlled interlayer exchange coupling magnetoresistive memory device and method of operating thereof
#23 | 2020-06-25Ferroelectric memory devices containing a two-dimensional charge carrier gas channel and methods of making the same
#24 | 2020-06-25Ferroelectric device with multiple polarization states and method of making the same
#25 | 2020-06-25Ferroelectric memory devices employing conductivity modulation of a thin semiconductor material or a two-dimensional charge carrier gas and methods of operating the same
#26 | 2018-02-06Dual cap layers for heat-assisted magnetic recording media
#27 | 2016-02-11Methods of producing and controlling tunneling electroresistance and tunneling magnetoresistance in a multiferroic tunnel junction
1441941 ⎘