Inventor profile of:

Ping Jiang

City:

Plano, Texas

Country:

United States

Published Applications:

28

Last publication date:

2017-06-22

Top Assignees for applications by Ping Jiang

The entities that hold a legal rights for patent applications filed by inventor Jiang Ping:

Recent patent applications by Jiang Ping

Ping Jiang from Plano, US has applied for patents for these inventions. The list has both pending applications and granted patents:

#1 | 2017-06-22
US20170178955A1
Electricity

Low damage low-k dielectric etch

#2 | 2017-05-25
US20170148634A1
Electricity

Method of fabricating semiconductors

#3 | 2016-11-08
US14952693
Electricity

Method of fabricating semiconductors

#4 | 2016-03-03
US20160061877A1
Physics

Capacitor combination stress testing

#5 | 2011-06-16
US20110143533A1
Electricity

Poison-free and low ULK damage integration scheme for damascene interconnects

#6 | 2011-02-10
US20110034023A1
Electricity

SILICON CARBIDE FILM FOR INTEGRATED CIRCUIT FABRICATION

#7 | 2010-02-18
US20100041231A1
Electricity

FUSI integration method using SOG as a sacrificial planarization layer

#8 | 2009-07-14
US10263981
-

Etching systems and processing gas specie modulation

#9 | 2009-04-30
US20090111224A1
Electricity

FUSI integration method using SOG as a sacrificial planarization layer

#10 | 2009-03-26
US20090081864A1
Electricity

SiC Film for Semiconductor Processing

#11 | 2009-01-15
US20090017563A1
Electricity

Plasma treatment and repair processes for reducing sidewall damage in low-k dielectrics

#12 | 2008-12-11
US20080305625A1
Electricity

Poison-free and low ULK damage integration scheme for damascene interconnects

#13 | 2008-12-04
US20080299718A1
Electricity

DAMASCENE PROCESS HAVING RETAINED CAPPING LAYER THROUGH METALLIZATION FOR PROTECTING LOW-K DIELECTRICS

#14 | 2008-04-17
US20080090423A1
Electricity

Gas switching during an etch process to modulate the characteristics of the etch

#15 | 2008-03-06
US20080057701A1
Electricity

METHOD FOR PREVENTION OF RESIST POISONING IN INTEGRATED CIRCUIT FABRICATION

#16 | 2008-01-31
US20080023440A1
Electricity

Method and system for controlling the uniformity of a ballistic electron beam by RF modulation

#17 | 2007-11-29
US20070275561A1
Electricity

Gas switching during an etch process to modulate the characteristics of the etch

#18 | 2007-07-26
US20070173047A1
Electricity

FUSI integration method using SOG as a sacrificial planarization layer

#19 | 2007-05-08
US10313491
-

Methods for forming single damascene via or trench cavities and for forming dual damascene via cavities

#20 | 2007-03-22
US20070063294A1
Electricity

Semiconductor Device Having a Fully Silicided Gate Electrode and Method of Manufacture Therefor

#21 | 2007-02-22
US20070042599A1
Electricity

Methods to facilitate etch uniformity and selectivity

#22 | 2006-10-31
US10429119
-

Dual cap layer in damascene interconnection processes

#23 | 2005-11-24
US20050260841A1
Electricity

Integration scheme for using silicided dual work function metal gates

#24 | 2005-11-17
US20050255687A1
Electricity

Plasma treatment for silicon-based dielectrics

#25 | 2005-11-03
US20050245074A1
Electricity

In-situ etch-stop etch and ashing in association with damascene processing in forming semiconductor interconnect structures

#26 | 2005-09-29
US20050215055A1
Electricity

Semiconductor device having a fully silicided gate electrode and method of manufacture therefor

#27 | 2005-09-29
US20050215037A1
Electricity

Method for manufacturing a semiconductor device having a silicided gate electrode and a method for manufacturing an integrated circuit including the same

#28 | 2005-05-31
US10393317
-

BARC etch comprising a selective etch chemistry and a high polymerizing gas for CD control

InventorID:

1460689 ⎘