Inventor profile of:

Roland RUPP

City:

Lauf

Country:

Germany

Published Applications:

125

Last publication date:

2025-06-12

Top Assignees for applications by Roland RUPP

The entities that hold a legal rights for patent applications filed by inventor RUPP Roland:

Recent patent applications by RUPP Roland

Roland RUPP from Lauf, DE has applied for patents for these inventions. The list has both pending applications and granted patents:

#1 | 2025-06-12
US20250194125A1
Electricity

Methods of Semiconductor Device Fabrication Involving Porous Silicon Carbide

#2 | 2024-05-09
US20240153759A1
Electricity

SEMICONDUCTOR DEVICE WITH A POROUS PORTION, WAFER COMPOSITE AND METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE

#3 | 2023-12-21
US20230411336A1
Electricity

SEMICONDUCTOR WAFER, CLIP AND SEMICONDUCTOR DEVICE

#4 | 2023-11-09
US20230361196A1
Electricity

Methods of forming semiconductor devices in a layer of epitaxial silicon carbide

#5 | 2023-10-19
US20230334337A1
Physics

Silicon carbide components and methods for producing silicon carbide components

#6 | 2023-10-19
US20230330769A1
Performing operations; transporting

Parent Substrate, Wafer Composite and Methods of Manufacturing Crystalline Substrates and Semiconductor Devices

#7 | 2022-11-17
US20220367191A1
Electricity

Method of manufacturing a semiconductor device and semiconductor wafer

#8 | 2022-11-10
US20220359428A1
Electricity

Method for Processing a Semiconductor Wafer and Semiconductor Composite Structure

#9 | 2022-11-10
US20220359194A1
Electricity

Semiconductor device with a porous portion, wafer composite and method of manufacturing a semiconductor device

#10 | 2022-09-15
US20220293558A1
Electricity

METHOD FOR FORMING SEMICONDUCTOR DEVICES USING A GLASS STRUCTURE ATTACHED TO A WIDE BAND-GAP SEMICONDUCTOR WAFER

#11 | 2022-09-08
US20220285283A1
Electricity

Silicon carbide device and method for forming a silicon carbide device

#12 | 2022-01-27
US20220028980A1
Electricity

Method of manufacturing silicon carbide semiconductor devices

#13 | 2022-01-06
US20220005742A1
Electricity

Semiconductor device with a passivation layer and method for producing thereof

#14 | 2021-11-18
US20210359087A1
Electricity

Method for forming a semiconductor device and a semiconductor device

#15 | 2021-11-11
US20210351077A1
Electricity

Methods for processing a wide band gap semiconductor wafer using a support layer and methods for forming a plurality of thin wide band gap semiconductor wafers using support layers

#16 | 2021-10-07
US20210313431A1
Electricity

Silicon carbide components and methods for producing silicon carbide components

#17 | 2021-09-30
US20210305198A1
Electricity

Method for processing a semiconductor wafer, semiconductor wafer, clip and semiconductor device

#18 | 2021-08-26
US20210265484A1
Electricity

Methods of re-using a silicon carbide substrate

#19 | 2021-06-03
US20210167203A1
Electricity

Method of manufacturing a silicon carbide semiconductor device with trench gate structure and vertical pn junction between body region and drift structure

#20 | 2021-02-25
US20210053148A1
Performing operations; transporting

Parent substrate, wafer composite and methods of manufacturing crystalline substrates and semiconductor devices

#21 | 2020-12-03
US20200381256A1
Electricity

Method of manufacturing a semiconductor device and semiconductor wafer

#22 | 2020-11-19
US20200365754A1
Electricity

Semiconductor wafers and semiconductor devices with barrier layer and methods of manufacturing

#23 | 2020-11-12
US20200357637A1
Electricity

Method of manufacturing a silicon carbide device and wafer composite including laser modified zones in a handle substrate

#24 | 2020-10-29
US20200343085A1
Electricity

Edge Shaping of Substrates

#25 | 2020-09-10
US20200286730A1
Electricity

Semiconductor device with a porous portion, wafer composite and method of manufacturing a semiconductor device

#26 | 2020-06-25
US20200198963A1
Performing operations; transporting

Method for processing a monocrystalline substrate and micromechanical structure

#27 | 2020-06-04
US20200176568A1
Electricity

Semiconductor device including trench structures and manufacturing method

#28 | 2020-05-14
US20200152743A1
Electricity

Method of manufacturing silicon carbide semiconductor devices

#29 | 2020-03-26
US20200098868A1
Electricity

Semiconductor device including trench gate structure and manufacturing method

#30 | 2020-01-09
US20200013859A1
Electricity

Semiconductor device and method of manufacturing a semiconductor device

#31 | 2020-01-09
US20200013723A1
Electricity

Silicon carbide device and method for forming a silicon carbide device

#32 | 2019-11-28
US20190363057A1
Electricity

Method for processing a semiconductor wafer, semiconductor composite structure and support structure for semiconductor wafer

#33 | 2019-11-28
US20190362972A1
Electricity

Methods for processing a silicon carbide wafer, and a silicon carbide semiconductor device

#34 | 2019-11-14
US20190348328A1
Electricity

Methods for processing a wide band gap semiconductor wafer, methods for forming a plurality of thin wide band gap semiconductor wafers, and wide band gap semiconductor wafers

#35 | 2019-11-07
US20190337069A1
Performing operations; transporting

Slicing SiC material by wire electrical discharge machining

#36 | 2019-09-26
US20190296141A1
Electricity

Silicon carbide semiconductor component

#37 | 2019-09-26
US20190296125A1
Electricity

Forming semiconductor devices in silicon carbide

#38 | 2019-09-26
US20190296110A1
Electricity

Silicon carbide semiconductor device with trench gate structure and horizontally arranged channel and current spread regions

#39 | 2019-08-15
US20190252282A1
Electricity

Semiconductor device with a passivation layer and method for producing thereof

#40 | 2019-08-08
US20190244853A1
Electricity

Wafer composite and method for producing a semiconductor component

#41 | 2019-08-08
US20190244850A1
Electricity

Wafer composite and method for producing semiconductor components

#42 | 2019-07-11
US20190214219A1
Electricity

Energy filter for processing a power semiconductor device

#43 | 2019-06-27
US20190198621A1
Electricity

Wide band gap semiconductor device and a method for forming a wide band gap semiconductor device

#44 | 2019-05-30
US20190165159A1
Electricity

Silicon carbide semiconductor component with edge termination structure

#45 | 2019-05-23
US20190157395A1
Electricity

Method for forming a semiconductor device and a semiconductor device

#46 | 2019-05-02
US20190131447A1
Electricity

Semiconductor device with termination structure including field zones and method of manufacturing

#47 | 2019-05-02
US20190131446A1
Electricity

Semiconductor device with junction termination zone

#48 | 2019-04-25
US20190123148A1
Electricity

Silicon carbide semiconductor device and a method for forming a silicon carbide semiconductor device

#49 | 2019-03-28
US20190097042A1
Electricity

Silicon carbide semiconductor device with trench gate structure and vertical PN junction between body region and drift structure

#50 | 2019-02-28
US20190067425A1
Electricity

Silicon carbide components and methods for producing silicon carbide components

#51 | 2019-02-14
US20190049850A1
Physics

Particle irradiation apparatus, beam modifier device, and semiconductor device including a junction termination extension zone

#52 | 2018-12-06
US20180350968A1
Electricity

Semiconductor device with trench gate structure including a gate electrode and a contact structure for a diode region

#53 | 2018-12-06
US20180350612A1
Electricity

Methods of planarizing SiC surfaces

#54 | 2018-10-11
US20180294260A1
Electricity

Semiconductor devices with trench gate structures in a semiconductor body with hexagonal crystal lattice

#55 | 2018-09-27
US20180277637A1
Electricity

Silicon carbide semiconductor device and method of manufacturing

#56 | 2018-07-19
US20180204725A1
Electricity

Method of manufacturing a silicon carbide semiconductor device by removing amorphized portions

#57 | 2018-07-12
US20180197766A1
Electricity

Wafer carrier, method for manufacturing the same and method for carrying a wafer

#58 | 2018-06-21
US20180175153A1
Electricity

Semiconductor devices and methods for forming semiconductor devices

#59 | 2018-06-21
US20180174840A1
Electricity

Forming a metal contact layer on silicon carbide and semiconductor device with metal contact structure

#60 | 2018-06-14
US20180166555A1
Electricity

Silicon Carbide Vertical MOSFET with Polycrystalline Silicon Channel Layer

#61 | 2018-06-14
US20180166324A1
Electricity

Buried insulator regions and methods of formation thereof

#62 | 2018-06-07
US20180158920A1
Electricity

Semiconductor device with diode region and trench gate structure

#63 | 2018-06-07
US20180158916A1
Electricity

Semiconductor component having a doped substrate layer and corresponding methods of manufacturing

#64 | 2018-05-17
US20180138353A1
Electricity

Semiconductor wafers and semiconductor devices with barrier layer and methods of manufacturing

#65 | 2018-05-17
US20180138266A1
Electricity

SiC-based superjunction semiconductor device

#66 | 2018-03-29
US20180086630A1
Performing operations; transporting

Method for processing a monocrystalline substrate and micromechanical structure

#67 | 2018-03-08
US20180068975A1
Electricity

Semiconductor package devices and method for forming semiconductor package devices

#68 | 2018-01-18
US20180019150A1
Electricity

Method for processing one semiconductor wafer or a plurality of semiconductor wafers and protective cover for covering the semiconductor wafer

#69 | 2018-01-04
US20180005830A1
Electricity

Forming electrode trenches by using a directed ion beam and semiconductor device with trench electrode structures

#70 | 2017-12-14
US20170358452A1
Electricity

Superjunction structure in a power semiconductor device

#71 | 2017-12-07
US20170352519A1
Electricity

Energy filter for processing a power semiconductor device

#72 | 2017-11-30
US20170345917A1
Electricity

Electric assembly including a bipolar switching device and a wide bandgap transistor

#73 | 2017-11-30
US20170345905A1
Electricity

Wide-Bandgap Semiconductor Device with Trench Gate Structures

#74 | 2017-11-30
US20170345818A1
Electricity

Semiconductor devices with trench gate structures in a semiconductor body with hexagonal crystal lattice

#75 | 2017-10-26
US20170309517A1
Electricity

Method for forming a semiconductor device and a semiconductor device

#76 | 2017-07-20
US20170207124A1
Electricity

Method of forming a semiconductor device

#77 | 2017-07-13
US20170200610A1
Electricity

Production of an integrated circuit including electrical contact on SiC

#78 | 2017-06-08
US20170162390A1
Electricity

Forming a contact layer on a semiconductor body

#79 | 2017-04-13
US20170103894A1
Electricity

Method of manufacturing a silicon carbide semiconductor device by removing amorphized portions

#80 | 2017-03-02
US20170059997A1
Physics

Particle irradiation apparatus, beam modifier device, and semiconductor device including a junction termination extension zone

#81 | 2017-02-02
US20170033011A1
Electricity

Method for forming a semiconductor device and a semiconductor device

#82 | 2017-02-02
US20170033010A1
Electricity

Method for forming a wafer structure, a method for forming a semiconductor device and a wafer structure

#83 | 2017-01-19
US20170018614A1
Electricity

Semiconductor device and a method for forming a semiconductor

#84 | 2017-01-12
US20170012102A1
Electricity

Method for reducing bipolar degradation in an SIC semiconductor device and semiconductor device

#85 | 2016-09-08
US20160260829A1
Electricity

Semiconductor device with trench gate structure including a gate electrode and a contact structure for a diode region

#86 | 2016-09-08
US20160260798A1
Electricity

Power semiconductor device including trench gate structures with longitudinal axes tilted to a main crystal direction

#87 | 2016-09-08
US20160260709A1
Electricity

Semiconductor devices with trench gate structures in a semiconductor body with hexagonal crystal lattice

#88 | 2016-09-08
US20160260699A1
Electricity

Method of manufacturing semiconductor devices by bonding a semiconductor disk on a base substrate, composite wafer and semiconductor device

#89 | 2016-08-11
US20160233295A1
Electricity

SiC-based superjunction semiconductor device

#90 | 2016-08-04
US20160225856A1
Electricity

Composite Wafer Having a SiC-Based Functional Layer

#91 | 2016-06-02
US20160155861A1
Electricity

Method of manufacturing a device by locally heating one or more metalization layers and by means of selective etching

#92 | 2016-06-02
US20160155714A1
Electricity

Semiconductor device, a power semiconductor device, and a method for processing a semiconductor device

#93 | 2016-04-14
US20160104779A1
Electricity

Silicon carbide device and a method for forming a silicon carbide device

#94 | 2016-03-24
US20160086844A1
Electricity

Method for manufacturing a composite wafer having a graphite core, and composite wafer having a graphite core

#95 | 2016-03-03
US20160064504A1
Electricity

Method of manufacturing a device by locally heating one or more metalization layers and by means of selective etching

#96 | 2015-12-17
US20150364550A1
Electricity

OPTIMIZED LAYER FOR SEMICONDUCTOR

#97 | 2015-12-03
US20150349097A1
Electricity

Method of manufacturing a semiconductor device having a rectifying junction at the side wall of a trench

#98 | 2015-09-10
US20150255362A1
Electricity

Semiconductor Device with a Passivation Layer and Method for Producing Thereof

#99 | 2015-07-02
US20150187871A1
Electricity

Silicon carbide device and a method for manufacturing a silicon carbide device

#100 | 2015-06-18
US20150171045A1
Electricity

Compound structure and method for forming a compound structure

InventorID:

147657 ⎘