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Inventor profile of:

MAMORU IMADE

City:

Osaka

Country:

Japan

Published Applications:

10

Last publication date:

2023-03-23

Top Assignees for applications by MAMORU IMADE

The entities that hold a legal rights for patent applications filed by inventor IMADE MAMORU:

OSAKA UNIVERSITY 6 Osaka, Japan
ITOCHU PLASTICS INC. 4 Tokyo, Japan
PANASONIC CORPORATION 2 Osaka, Japan
DISCO CORPORATION 1 Tokyo, Japan
OSAKA UNIVERSITY 1 Suita-shi, Osaka, Japan
National University Corporation Tokyo University of Agriculture and Technology 1 Tokyo, Japan
Panasonic Intellectual Property Management Co., Ltd. 1 Osaka, Japan

Recent patent applications by IMADE MAMORU

MAMORU IMADE from Osaka, JP has applied for patents for these inventions. The list has both pending applications and granted patents:

#1 | 2023-03-23

US20230087976A1

NON-PLASMA ENHANCED DEPOSITION FOR RECESS ETCH MATCHING

#2 | 2019-03-21

US20190088816A1

Manufacturing method of III-V compound crystal and manufacturing method of semiconductor device

#3 | 2018-04-05

US20180094361A1

Chemistry; metallurgy

METHOD FOR PRODUCING GROUP III NITRIDE CRYSTAL, SEMICONDUCTOR APPARATUS, AND APPARATUS FOR PRODUCING GROUP III NITRIDE CRYSTAL

#4 | 2017-12-21

US20170362735A1

Chemistry; metallurgy

Crystal growth apparatus and crystal production method

#5 | 2017-11-09

US20170321348A1

Chemistry; metallurgy

Method for producing group III element nitride crystal, group III element nitride crystal, semiconductor device, method for producing semiconductor device, and group III element nitride crystal production device

#6 | 2017-03-16

US20170073840A1

Chemistry; metallurgy

Process for producing group III nitride crystal and apparatus for producing group III nitride crystal

#7 | 2017-03-16

US20170073839A1

Chemistry; metallurgy

Method for producing group-III nitride crystal, group-III nitride crystal, semiconductor device, and device for producing group-III nitride crystal

#8 | 2016-09-15

US20160268129A1

Method for producing group III nitride crystal, group III nitride crystal, semiconductor device and apparatus for producing group III nitride crystal

#9 | 2016-03-31

US20160090665A1

Chemistry; metallurgy

APPARATUS FOR PRODUCING GROUP III NITRIDE CRYSTAL, AND METHOD FOR PRODUCING THE SAME

#10 | 2016-03-31

US20160090304A1

Chemistry; metallurgy

Method for producing group III nitride crystal

InventorID:

1487486 ⎘