Inventor profile of:

Ryan Hatcher

City:

Austin, Texas

Country:

United States

Published Applications:

12

Last publication date:

2022-08-04

Top Assignees for applications by Ryan Hatcher

The entities that hold a legal rights for patent applications filed by inventor Hatcher Ryan:

Recent patent applications by Hatcher Ryan

Ryan Hatcher from Austin, US has applied for patents for these inventions. The list has both pending applications and granted patents:

#1 | 2022-08-04
US20220246190A1
Physics

Giant spin hall-based compact neuromorphic cell optimized for differential read inference

#2 | 2021-05-06
US20210133544A1
Physics

Optimization of sparsified neural network layers for semi-digital crossbar architectures

#3 | 2021-04-29
US20210124984A1
Physics

Batch size pipelined PIM accelerator for vision inference on multiple images

#4 | 2021-04-29
US20210124588A1
Physics

ULTRA PIPELINED ACCELERATOR FOR MACHINE LEARNING INFERENCE

#5 | 2021-04-22
US20210118950A1
Electricity

System and method for efficient enhancement of an on/off ratio of a bitcell based on 3T2R binary weight cell with spin orbit torque MJTs (SOT-MTJs)

#6 | 2021-04-22
US20210117769A1
Physics

Monolithic multi-bit weight cell for neuromorphic computing

#7 | 2021-02-25
US20210057011A1
Physics

Variation mitigation scheme for semi-digital mac array with a 2T-2 resistive memory element bitcell

#8 | 2020-12-10
US20200388314A1
Physics

Giant spin hall-based compact neuromorphic cell optimized for differential read inference

#9 | 2019-12-26
US20190392881A1
Physics

Giant spin hall-based compact neuromorphic cell optimized for differential read inference

#10 | 2018-10-18
US20180300618A1
Physics

Monolithic multi-bit weight cell for neuromorphic computing

#11 | 2017-04-06
US20170098661A1
Electricity

Semiconductor device including a repeater/buffer at higher metal routing layers and methods of manufacturing the same

#12 | 2016-06-09
US20160163796A1
Electricity

Semiconductor devices with structures for suppression of parasitic bipolar effect in stacked nanosheet FETs and methods of fabricating the same

InventorID:

1557171 ⎘