Daniel S. Ng

City:

Campbell, California

Country:

United States

Published Applications:

Last publication date:

2015-10-15

Top Assignees for applications by Daniel S. Ng

The entities that hold a legal rights for patent applications filed by inventor Ng Daniel S.:

Daniel S. Ng from Campbell, US has applied for patents for these inventions. The list has both pending applications and granted patents:

MOSFET switch circuit for slow switching application

Trench MOSFET with integrated Schottky barrier diode

Method for forming a schottky barrier diode integrated with a trench MOSFET

Trench MOSFET with integrated Schottky barrier diode

Planar split-gate high-performance MOSFET structure and manufacturing method

Planar split-gate high-performance MOSFET structure and manufacturing method

InventorID:

160888 ⎘