Sunnyvale, California
United States
15
2009-10-22
15
2011-04-26
These are the the leading inventors for applications assigned to Alpha & Omega Semiconductor, Ltd.:
Alpha & Omega Semiconductor, Ltd. based in Sunnyvale, US has been assigned the rights to these inventions. The list includes both Pending Applications and Patent Grants:
Circuit configurations to reduce snapback of a transient voltage suppressor
#2 | 2009-07-16 ✅ Patent 8,053,298 granted on 2011-11-08Planar split-gate high-performance MOSFET structure and manufacturing method
#3 | 2009-03-19 ✅ Patent 7,745,878 granted on 2010-06-29Shielded gate trench (SGT) MOSFET cells implemented with a schottky source contact
#4 | 2007-12-06 ✅ Patent 7,855,422 granted on 2010-12-21Formation of high sheet resistance resistors and high capacitance capacitors by a single polysilicon process
#5 | 2007-12-06 ✅ Patent 7,538,997 granted on 2009-05-26Circuit configurations to reduce snapback of a transient voltage suppressor
#6 | 2007-12-06 ✅ Patent 7,504,676 granted on 2009-03-17Planar split-gate high-performance MOSFET structure and manufacturing method
#7 | 2007-09-27 ✅ Patent 7,495,877 granted on 2009-02-24Circuit configuration and method to reduce ringing in the semiconductor power switching circuits
#8 | 2007-08-16 ✅ Patent 8,022,482 granted on 2011-09-20Device configuration of asymmetrical DMOSFET with schottky barrier source
#9 | 2007-08-09 ✅ Patent 7,355,433 granted on 2008-04-08Configurations and method for carrying out wafer level unclamped inductive switching (UIS) tests
#10 | 2007-04-19 ✅ Patent 7,829,989 granted on 2010-11-09Vertical packaged IC device modules with interconnected 3D laminates directly contacts wafer backside
#11 | 2007-04-12 ✅ Patent 7,838,977 granted on 2010-11-23Packages for electronic devices implemented with laminated board with a top and a bottom patterned metal layers
#12 | 2007-02-27 ✅ Patent 7,183,616 granted on 2007-02-27High speed switching MOSFETS using multi-parallel die packages with/without special leadframes
#13 | 2006-11-09 ✅ Patent 7,659,570 granted on 2010-02-09Power MOSFET device structure for high frequency applications
#14 | 2006-10-05 ✅ Patent 7,786,531 granted on 2010-08-31MOSFET with a second poly and an inter-poly dielectric layer over gate for synchronous rectification
#15 | 2006-09-21 ✅ Patent 7,221,195 granted on 2007-05-22MOSFET for synchronous rectification
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