Inventor profile of:

Do-Sun LEE

City:

Suwon-si

Country:

South Korea

Published Applications:

20

Last publication date:

2026-04-02

Top Assignees for applications by Do-Sun LEE

The entities that hold a legal rights for patent applications filed by inventor LEE Do-Sun:

Recent patent applications by LEE Do-Sun

Do-Sun LEE from Suwon-si, KR has applied for patents for these inventions. The list has both pending applications and granted patents:

#1 | 2026-04-02
US20260096422A1
Electricity

SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME

#2 | 2026-03-26
US20260089932A1
Electricity

SEMICONDUCTOR MEMORY DEVICE

#3 | 2026-03-19
US20260082548A1
Electricity

SEMICONDUCTOR MEMORY DEVICE

#4 | 2026-01-01
US20260006778A1
Electricity

SEMICONDUCTOR MEMORY DEVICES

#5 | 2026-01-01
US20260006777A1
Electricity

SEMICONDUCTOR MEMORY DEVICES

#6 | 2025-02-27
US20250072096A1
Electricity

METHODS OF FABRICATING SEMICONDUCTOR DEVICES

#7 | 2024-12-19
US20240421190A1
Electricity

SEMICONDUCTOR DEVICES

#8 | 2024-12-05
US20240405090A1
Electricity

SEMICONDUCTOR DEVICE

#9 | 2024-04-18
US20240128347A1
Electricity

SEMICONDUCTOR DEVICE

#10 | 2022-10-06
US20220319916A1
Electricity

Semiconductor device

#11 | 2022-09-08
US20220285518A1
Electricity

Semiconductor device

#12 | 2021-07-08
US20210210613A1
Electricity

Semiconductor device

#13 | 2021-01-21
US20210020500A1
Electricity

Semiconductor device

#14 | 2018-09-13
US20180261540A1
Electricity

Integrated circuit device

#15 | 2018-03-29
US20180090495A1
Electricity

Semiconductor devices including active areas with increased contact area

#16 | 2017-12-07
US20170352728A1
Electricity

Semiconductor devices including contact structures that partially overlap silicide layers

#17 | 2017-10-12
US20170294355A1
Electricity

Semiconductor devices including active fins and methods of manufacturing the same

#18 | 2017-04-13
US20170103948A1
Electricity

Integrated circuit device and method of fabricating the same

#19 | 2016-10-20
US20160308004A1
Electricity

Semiconductor devices including contact structures that partially overlap silicide layers

#20 | 2016-10-06
US20160293697A1
Electricity

Semiconductor devices including active fins and methods of manufacturing the same

InventorID:

1674617 ⎘