Hsiang-Lan Lung

COMPUTATIONAL STORAGE DEVICE, COMPUTATIONAL STORAGE SYSTEM AND OPERATION METHOD FOR DISKANN SEARCH

Computational storage device, computational storage system and operation method for DiskANN search

METHOD FOR OPERATING MEMORY DEVICE

Memory device and method for fabricating the same

Memory device and method for fabricating the same

Method for manufacturing three dimensional stacked semiconductor structure and structure manufactured by the same

Memory device and method for fabricating the same

Manufacturing method of semiconductor structure

Memory structure and method for manufacturing the same

Memory device and method for operating the same

Memory structure, method of operating the same, and method of manufacturing the same

Memory structure

Memory device and operation method

Refresh of nonvolatile memory cells and reference cells with resistance drift

Phase change device for interconnection of programmable logic device

Method for fabrication of crystalline diodes for resistive memories

Memory device

Flat lower bottom electrode for phase change memory cell

Current constricting phase change memory element structure

Method of forming a small contact in phase-change memory

High density chalcogenide memory cells

Current constricting phase change memory element structure

Phase change memory with tapered heater

Method for manufacturing a phase change memory device with pillar bottom electrode

Method of forming a chalcogenide memory cell having an ultrasmall cross-sectional area and a chalcogenide memory cell produced by the method

Magnetic random access memory using single crystal self-aligned diode

High density chalcogenide memory cells

Thin film phase-change memory

Method for programming multi-level nitride read-only memory cells

Common word line edge contact phase-change memory

Thin film phase-change memory

Anti-fuse one-time-programmable nonvolatile memory

Manufacturing method of one-time programmable read only memory

Horizontal chalcogenide element defined by a pad for use in solid-state memories

Method for programming multi-level nitride read-only memory cells

Method of forming a small contact in phase-change memory and a memory cell produced by the method

High density chalcogenide memory cells

Chalcogenide memory having a small active region

One-time programmable read only memory and manufacturing method thereof

Method of determining optimal voltages for operating two-side non-volatile memory and the operating methods

Method of forming a chalcogenide memory cell having an ultrasmall cross-sectional area and a chalcogenide memory cell produced by the method

Common word line edge contact phase-change memory

High density single transistor ferroelectric non-volatile memory

Method of multi-level cell FeRAM

Tunneling diode magnetic junction memory

MRAM array employing spin-filtering element connected by spin-hold element to MRAM cell structure for enhanced magnetoresistance

Structure and operating method for nonvolatile memory cell

Trap read only non-volatile memory (TROM)

Thin film phase-change memory

Horizontal chalcogenide element defined by a pad for use in solid-state memories

Ferroelectric device and method for making

3D polysilicon ROM and method of fabrication thereof

Nonvolatile memory programmable by a heat induced chemical reaction

Method of making a nonvolatile memory programmable by a heat induced chemical reaction

Non-volatile semiconductor memory cell utilizing poly-edge discharge

Spacer chalcogenide memory device

Mask read only memory containing diodes and method of manufacturing the same

Nonvolatile memory programmble by a heat induced chemical reaction

Chalcogenide phase-change non-volatile memory, memory device and method for fabricating the same

Spacer chalcogenide memory method

Spacer chalcogenide memory method and device

Non-volatile memory cell having metal nano-particles for trapping charges and fabrication thereof

Split-gate non-volatile memory

Chalcogenide memory device with multiple bits per cell