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Inventor profile of:

Takehiro YOSHIDA

City:

HItachi

Country:

Japan

Published Applications:

Last publication date:

2024-11-07

Top Assignees for applications by Takehiro YOSHIDA

The entities that hold a legal rights for patent applications filed by inventor YOSHIDA Takehiro:

SUMITOMO CHEMICAL COMPANY, LIMITED 19 Tokyo, Japan
SCIOCS COMPANY LIMITED 11 Hitachi-shi, Ibaraki, Japan
SCIOCS COMPANY LIMITED 3 Hitachi-shi, Japan
OSAKA UNIVERSITY 2 Suita-shi, Osaka, Japan
OSAKA UNIVERSITY 1 Osaka, Japan
Hosei University 1 Tokyo, Japan
SCIOCS COMPANY LIMITED 1 Hitachi, Japan

Recent patent applications by YOSHIDA Takehiro

Takehiro YOSHIDA from HItachi, JP has applied for patents for these inventions. The list has both pending applications and granted patents:

#1 | 2024-11-07

US20240368804A1

Chemistry; metallurgy

METHOD FOR MANUFACTURING NITRIDE SEMICONDUCTOR SUBSTRATE, NITRIDE SEMICONDUCTOR SUBSTRATE, AND LAMINATE STRUCTURE

#2 | 2024-09-12

US20240302302A1

Physics

Nitride semiconductor substrate, laminated structure, and method for manufacturing nitride semiconductor substrate

#3 | 2022-04-07

US20220106706A1

Chemistry; metallurgy

Nitride semiconductor substrate, laminated structure, and method for manufacturing nitride semiconductor substrate

#4 | 2022-03-10

US20220074071A1

Chemistry; metallurgy

Method for manufacturing nitride semiconductor substrate and nitride semiconductor substrate

#5 | 2022-01-06

US20220005691A1

Electricity

Method for manufacturing nitride semiconductor substrate, nitride semiconductor substrate and layered structure

#6 | 2021-12-16

US20210391427A1

Electricity

NITRIDE SEMICONDUCTOR SUBSTRATE MANUFACTURING METHOD AND LAMINATED STRUCTURE

#7 | 2021-11-18

US20210355601A1

Chemistry; metallurgy

METHOD FOR MANUFACTURING NITRIDE SEMICONDUCTOR SUBSTRATE, NITRIDE SEMICONDUCTOR SUBSTRATE, AND LAMINATE STRUCTURE

#8 | 2021-10-14

US20210317597A1

Chemistry; metallurgy

Nitride semiconductor substrate, method for manufacturing nitride semiconductor substrate, and laminated structure

#9 | 2021-09-23

US20210292931A1

Chemistry; metallurgy

Method for manufacturing nitride semiconductor substrate, nitride semiconductor substrate, and laminate structure

#10 | 2021-06-17

US20210184003A1

Electricity

Nitride semiconductor substrate, laminate, substrate selection program, substrate data output program, off-angle coordinate map, and methods thereof

#11 | 2020-07-16

US20200227262A1

Electricity

Crystal laminate, semiconductor device and method for manufacturing the same

#12 | 2020-07-02

US20200208297A1

Chemistry; metallurgy

Nitride crystal substrate, semiconductor laminate, method of manufacturing semiconductor laminate and method of manufacturing semiconductor device

#13 | 2018-04-26

US20180114692A1

Electricity

Method for manufacturing group-III nitride substrate and group-III nitride substrate

#14 | 2018-03-29

US20180087185A1

Chemistry; metallurgy

Method for manufacturing nitride crystal substrate and nitride crystal laminate

#15 | 2018-02-08

US20180038010A1

Chemistry; metallurgy

Method for manufacturing group-III nitride semiconductor crystal substrate

#16 | 2017-08-31

US20170247813A1

Chemistry; metallurgy

Method for manufacturing group III nitride substrate formed of a group III nitride crystal

#17 | 2017-07-06

US20170191186A1

Chemistry; metallurgy

Method for manufacturing nitride crystal substrate and substrate for crystal growth

#18 | 2017-03-09

US20170067182A1

Chemistry; metallurgy

Nitride semiconductor single crystal substrate manufacturing method

#19 | 2017-01-12

US20170009378A1

Chemistry; metallurgy

Semiconductor substrate manufacturing method

InventorID:

1767733 ⎘