Inventor profile of:

Rongjun Wang

City:

Dublin, California

Country:

United States

Published Applications:

110

Last publication date:

2026-04-16

Top Assignees for applications by Rongjun Wang

The entities that hold a legal rights for patent applications filed by inventor Wang Rongjun:

Recent patent applications by Wang Rongjun

Rongjun Wang from Dublin, US has applied for patents for these inventions. The list has both pending applications and granted patents:

#1 | 2026-04-16
US20260107749A1
Electricity

SUPERCONFORMAL MOLYBDENUM VIA FILL BY USE OF DEPOSITION GRADIENT CONTROL

#2 | 2026-02-19
US20260052962A1
Electricity

CHEMICAL PASSIVATION OF MOLYBDENUM PLUG OR TRENCH'S OUTER SURFACE TO PREVENT MO NITRIDATION OR OXIDATION AND MAINTAIN LOW CONTACT RESISTANCE

#3 | 2026-02-19
US20260052960A1
Electricity

LOW RESISTIVITY AND LOW SURFACE ROUGHNESS TUNGSTEN GROWTH ON BORON NITRIDE INTERFACE

#4 | 2025-10-16
US20250323028A1
Electricity

METHODS FOR EXTENDING MWBC IN SEMICONDUCTOR PROCESSING CHAMBERS

#5 | 2025-10-16
US20250320603A1
Chemistry; metallurgy

METHODS FOR IMPROVING THROUGHPUT AND GAPFILL QUALITY FOR METAL DEPOSITION

#6 | 2025-09-25
US20250300015A1
Electricity

SELECTIVE TUNGSTEN NAND DEEP CONTACT GAP BOTTOM FILL

#7 | 2025-05-15
US20250157824A1
Electricity

Selective metal Capping with Metal Halide enhancement

#8 | 2025-03-06
US20250079199A1
Electricity

ONE CHAMBER MULTI-STATION SELECTIVE METAL REMOVAL

#9 | 2025-01-02
US20250006552A1
Electricity

BOTTOM-UP GAP FILL PROCESSES FOR SEMICONDUCTOR SUBSTRATES

#10 | 2024-12-19
US20240420947A1
Electricity

METAL OXIDE PRECLEAN FOR BOTTOM-UP GAPFILL IN MEOL AND BEOL

#11 | 2024-11-28
US20240395614A1
Electricity

Method for Metal Gapfill

#12 | 2024-11-07
US20240371771A1
Electricity

INTERRUPTION LAYER FILL FOR LOW RESISTANCE CONTACTS

#13 | 2024-11-07
US20240371654A1
Electricity

SILICON NITRIDE DAMAGE-FREE DRY ETCH METHOD FOR TUNGSTEN REMOVAL IN MIDDLE OF LINE BOTTOM-UP TUNGSTEN INTEGRATION

#14 | 2024-10-31
US20240363407A1
Electricity

LOW-ENERGY UNDERLAYER FOR ROOM TEMPERATURE PHYSICAL VAPOR DEPOSITION OF ELECTRICALLY CONDUCTIVE FEATURES

#15 | 2024-10-24
US20240355673A1
Electricity

HYBRID MOLYBDENUM FILL SCHEME FOR LOW RESISTIVITY SEMICONDUCTOR APPLICATIONS

#16 | 2024-09-12
US20240304495A1
Electricity

HYDROGEN PLASMA TREATMENT FOR FORMING LOGIC DEVICES

#17 | 2024-08-22
US20240282631A1
Electricity

INTEGRATION SOLUTION FOR NAND DEEP CONTACT GAP FILL

#18 | 2024-07-18
US20240240314A1
Chemistry; metallurgy

LOW RESISTIVITY GAPFILL FOR LOGIC DEVICES

#19 | 2024-05-30
US20240178062A1
Electricity

Method for Gapfill

#20 | 2024-05-30
US20240175120A1
Chemistry; metallurgy

LOW RESISTIVITY GAPFILL

#21 | 2024-05-23
US20240167148A1
Chemistry; metallurgy

METHODS OF REMOVING METAL OXIDE USING CLEANING PLASMA

#22 | 2024-03-28
US20240105444A1
Electricity

Methods for Forming Low Resistivity Contacts

#23 | 2024-03-14
US20240088071A1
Electricity

Methods for forming metal gapfill with low resistivity

#24 | 2024-03-14
US20240087955A1
Electricity

INTEGRATED PVD TUNGSTEN LINER AND SEAMLESS CVD TUNGSTEN FILL

#25 | 2024-02-08
US20240047267A1
Electricity

TUNGSTEN GAP FILL WITH HYDROGEN PLASMA TREATMENT

#26 | 2024-01-11
US20240014072A1
Electricity

NITROGEN PLASMA TREATMENT FOR BOTTOM-UP GROWTH

#27 | 2024-01-04
US20240006236A1
Electricity

PLASMA ENHANCED TUNGSTEN NUCLEATION FOR LOW RESISTIVITY

#28 | 2023-12-28
US20230420295A1
Electricity

TREATMENT OF TUNGSTEN SURFACE FOR TUNGSTEN GAP-FILL

#29 | 2023-12-14
US20230402271A1
Electricity

Methods and apparatus for controlling ion fraction in physical vapor deposition processes

#30 | 2023-11-30
US20230386833A1
Electricity

Selective metal removal with flowable polymer

#31 | 2023-11-23
US20230377892A1
Electricity

METHODS AND APPARATUS FOR PROCESSING A SUBSTRATE

#32 | 2023-10-26
US20230343644A1
Electricity

METHOD OF IN-SITU SELECTIVE METAL REMOVAL VIA GRADIENT OXIDATION FOR GAPFILL

#33 | 2023-10-26
US20230343643A1
Electricity

GRADIENT OXIDATION AND ETCH FOR PVD METAL AS BOTTOM LINER IN BOTTOM UP GAP FILL

#34 | 2023-08-17
US20230257868A1
Chemistry; metallurgy

APPARATUS AND METHOD FOR FABRICATING PVD PEROVSKITE FILMS

#35 | 2023-06-15
US20230187204A1
Electricity

Tungsten Fluoride Soak And Treatment For Tungsten Oxide Removal

#36 | 2023-04-20
US20230122956A1
Chemistry; metallurgy

Methods and apparatus for processing a substrate

#37 | 2023-03-23
US20230088552A1
Electricity

Top magnets for decreased non-uniformity in PVD

#38 | 2023-03-09
US20230073011A1
Electricity

SHUTTER DISK FOR PHYSICAL VAPOR DEPOSITION (PVD) CHAMBER

#39 | 2022-12-22
US20220406790A1
Electricity

Silicon-containing layer for bit line resistance reduction

#40 | 2022-12-22
US20220406788A1
Electricity

Silicon-containing layer for bit line resistance reduction

#41 | 2022-09-29
US20220310364A1
Electricity

METHODS AND APPARATUS FOR PROCESSING A SUBSTRATE

#42 | 2022-09-29
US20220310363A1
Electricity

METHODS AND APPARATUS FOR PROCESSING A SUBSTRATE

#43 | 2022-03-17
US20220081758A1
Chemistry; metallurgy

METHODS AND APPARATUS FOR IN-SITU DEPOSITION MONITORING

#44 | 2022-01-20
US20220020577A1
Electricity

Methods and apparatus for controlling ion fraction in physical vapor deposition processes

#45 | 2022-01-13
US20220013716A1
Electricity

METHODS FOR FORMING STRUCTURES WITH DESIRED CRYSTALLINITY FOR MRAM APPLICATIONS

#46 | 2022-01-06
US20220005679A1
Electricity

Plasma chamber target for reducing defects in workpiece during dielectric sputtering

#47 | 2021-10-21
US20210328104A1
Electricity

Oxygen controlled PVD ALN buffer for GAN-based optoelectronic and electronic devices

#48 | 2021-10-14
US20210320247A1
Electricity

MAGNETIC TUNNEL JUNCTIONS WITH TUNABLE HIGH PERPENDICULAR MAGNETIC ANISOTROPY

#49 | 2021-10-14
US20210320246A1
Electricity

Methods for treating magnesium oxide film

#50 | 2021-10-14
US20210319989A1
Electricity

METHODS AND APPARATUS FOR PROCESSING A SUBSTRATE

#51 | 2021-06-24
US20210193914A1
Electricity

Magnetic tunnel junction structures and methods of manufacture thereof

#52 | 2021-03-11
US20210071294A1
Chemistry; metallurgy

METHODS AND APPARATUS FOR CONTROLLING ION FRACTION IN PHYSICAL VAPOR DEPOSITION PROCESSES

#53 | 2020-11-12
US20200357616A1
Electricity

HIGH PRESSURE RF-DC SPUTTERING AND METHODS TO IMPROVE FILM UNIFORMITY AND STEP-COVERAGE OF THIS PROCESS

#54 | 2020-08-13
US20200259078A1
Electricity

Magnetic tunnel junctions with tunable high perpendicular magnetic anisotropy

#55 | 2020-06-25
US20200203144A1
Electricity

METHODS OF CLEANING AN OXIDE LAYER IN A FILM STACK TO ELIMINATE ARCING DURING DOWNSTREAM PROCESSING

#56 | 2020-05-21
US20200160884A1
Physics

Magnetic tunnel junctions suitable for high temperature thermal processing

#57 | 2020-04-23
US20200127164A1
Electricity

Oxygen controlled PVD AlN buffer for GaN-based optoelectronic and electronic devices

#58 | 2020-04-09
US20200111885A1
Electricity

Methods and apparatus for n-type metal oxide semiconductor (NMOS) metal gate materials using atomic layer deposition (ALD) processes with metal based precursors

#59 | 2020-04-02
US20200105626A1
Electricity

ARCING TEST VEHICLE AND METHOD OF USE THEREOF

#60 | 2020-03-19
US20200091420A1
Electricity

Apparatus and methods of fabricating a magneto-resistive random access memory (MRAM) device

#61 | 2020-02-13
US20200051795A1
Electricity

Physical vapor deposition (PVD) chamber with reduced arcing

#62 | 2019-12-12
US20190378699A1
Electricity

METHODS AND APPARATUS FOR MAGNETRON ASSEMBLIES IN SEMICONDUCTOR PROCESS CHAMBERS

#63 | 2019-11-28
US20190363246A1
Electricity

Magnetic tunnel junctions with coupling-pinning layer lattice matching

#64 | 2019-11-14
US20190348600A1
Electricity

Magnetic tunnel junction structures and methods of manufacture thereof

#65 | 2019-11-05
US16029844
Electricity

Magnetic tunnel junctions and methods of fabrication thereof

#66 | 2019-10-03
US20190305217A1
Electricity

Magnetic tunnel junctions with tunable high perpendicular magnetic anisotropy

#67 | 2019-09-26
US20190292651A1
Chemistry; metallurgy

Resistance-area (RA) control in layers deposited in physical vapor deposition chamber

#68 | 2019-06-06
US20190172973A1
Electricity

Oxygen controlled PVD AlN buffer for GaN-based optoelectronic and electronic devices

#69 | 2019-06-06
US20190172485A1
Physics

Magnetic tunnel junctions suitable for high temperature thermal processing

#70 | 2019-02-14
US20190051768A1
Electricity

METHOD FOR GRADED ANTI-REFLECTIVE COATINGS BY PHYSICAL VAPOR DEPOSITION

#71 | 2019-01-24
US20190027169A1
Physics

Magnetic tunnel junctions suitable for high temperature thermal processing

#72 | 2018-12-06
US20180350572A1
Electricity

Process kit for multi-cathode processing chamber

#73 | 2018-10-11
US20180291500A1
Chemistry; metallurgy

Plasma chamber target for reducing defects in workpiece during dielectric sputtering

#74 | 2018-09-13
US20180261720A1
Electricity

Oxygen controlled PVD AlN buffer for GaN-based optoelectronic and electronic devices

#75 | 2018-08-23
US20180240655A1
Electricity

Methods and apparatus for multi-cathode substrate processing

#76 | 2018-08-09
US20180223421A1
Chemistry; metallurgy

Paste method to reduce defects in dielectric sputtering

#77 | 2018-05-24
US20180142343A1
Chemistry; metallurgy

Methods for depositing amorphous silicon layers or silicon oxycarbide layers via physical vapor deposition

#78 | 2018-03-29
US20180087147A1
Chemistry; metallurgy

Process kit shield for improved particle reduction

#79 | 2018-01-11
US20180010242A1
Chemistry; metallurgy

DEPOSITION RING AND ELECTROSTATIC CHUCK FOR PHYSICAL VAPOR DEPOSITION CHAMBER

#80 | 2017-12-07
US20170350001A1
Chemistry; metallurgy

Sputtering target for PVD chamber

#81 | 2017-09-07
US20170253959A1
Chemistry; metallurgy

Methods and apparatus for controlling ion fraction in physical vapor deposition processes

#82 | 2017-06-22
US20170178877A1
Electricity

Methods and apparatus for processing a substrate

#83 | 2017-06-15
US20170170393A1
Electricity

Methods for forming structures with desired crystallinity for MRAM applications

#84 | 2017-05-04
US20170125215A1
Electricity

Methods for thin film material deposition using reactive plasma-free physical vapor deposition

#85 | 2017-02-02
US20170029941A1
Chemistry; metallurgy

High pressure RF-DC sputtering and methods to improve film uniformity and step-coverage of this process

#86 | 2017-01-19
US20170018706A1
Electricity

Methods for forming structures with desired crystallinity for MRAM applications

#87 | 2016-12-22
US20160372319A1
Electricity

Methods for depositing dielectric films via physical vapor deposition processes

#88 | 2016-11-24
US20160340775A1
Chemistry; metallurgy

Deposition ring and electrostatic chuck for physical vapor deposition chamber

#89 | 2016-10-06
US20160293798A1
Electricity

PVD buffer layers for LED fabrication

#90 | 2016-02-04
US20160035937A1
Electricity

Oxygen controlled PVD AlN buffer for GaN-based optoelectronic and electronic devices

#91 | 2015-12-03
US20150348773A1
Electricity

Aluminum-nitride buffer and active layers by physical vapor deposition

#92 | 2015-05-14
US20150132551A1
Electricity

Method for graded anti-reflective coatings by physical vapor deposition

#93 | 2015-04-30
US20150114827A1
Electricity

METHODS OF FORMING A METAL DIELECTRIC ETCHING STOP LAYER ON A SUBSTRATE WITH HIGH ETCHING SELECTIVITY

#94 | 2015-03-19
US20150075980A1
Electricity

Extended dark space shield

#95 | 2014-09-18
US20140264363A1
Electricity

Oxygen controlled PVD aluminum nitride buffer for gallium nitride-based optoelectronic and electronic devices

#96 | 2014-08-28
US20140238843A1
Electricity

Variable radius dual magnetron

#97 | 2013-10-31
US20130285065A1
Electricity

PVD buffer layers for LED fabrication

#98 | 2013-05-09
US20130112554A1
Chemistry; metallurgy

DEPOSITION RING AND ELECTROSTATIC CHUCK FOR PHYSICAL VAPOR DEPOSITION CHAMBER

#99 | 2013-04-11
US20130087452A1
Electricity

PROCESS KIT FOR RF PHYSICAL VAPOR DEPOSITION

#100 | 2012-08-23
US20120211354A1
Electricity

Uniformity tuning capable ESC grounding kit for RF PVD chamber

InventorID:

182437 ⎘